Marks and method for multi-layer alignment

Abstract

Marks and a method for multi-layer alignment. A first layer with first alignment marks is formed on a semiconductor substrate, wherein the first alignment marks are separated parallelly by a predetermined distance. A second layer with second alignment marks is formed on the first layer, wherein the second alignment marks are separated parallelly by a predetermined distance. The shift distance of each first alignment mark is measured to calculate a first midpoint between the first alignments. The shift distance of each second alignment mark is measured to calculate a second midpoint between the second alignments. A third midpoint acting as a datum point between the fist midpoint and the second midpoint is calculated.

1 - 4 . (canceled)  
   
   
       5 . A marks for multi-layer alignment of a semiconductor substrate, comprising: 
 a first layer with first alignment marks, wherein the first alignment marks are separated parallelly by a predetermined distance; and    a second layer with second alignment marks, wherein the second alignment marks are separated parallelly by a predetermined distance, the second alignment marks and the first alignment marks are alternately disposed, and overlap completely.