Low dielectric constant film produced from silicon compounds comprising silicon-carbon bonds

Abstract

A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH 3 SiH 3 , and N 2 O.

1 . A substrate, comprising: 
 a conformal dielectric layer comprising silicon, oxygen bonded to the silicon, and carbon bonded to the silicon, wherein the conformal dielectric layer has a carbon content of at least 1% by atomic weight; and    a silicon carbide layer adjacent the conformal dielectric layer.    
   
   
       2 . The substrate of  claim 1 , wherein the conformal dielectric layer has a carbon content from between about 1% and about 50% by atomic weight.  
   
   
       3 . The substrate of  claim 1 , wherein the conformal dielectric layer has a dielectric constant of about 3 or less.  
   
   
       4 . The substrate of  claim 1 , wherein the conformal dielectric layer and the silicon carbide layer have openings defining interconnects.  
   
   
       5 . The substrate of  claim 1 , wherein the conformal dielectric layer and the silicon carbide layer have copper interconnects.  
   
   
       6 . The substrate of  claim 1 , wherein the conformal dielectric layer has a carbon content of about 20% by atomic weight.  
   
   
       7 . A structure, comprising: 
 an oxidized organosilane layer on a substrate, wherein the oxidized organosilane layer comprises silicon, oxygen bonded to the silicon, and carbon bonded to the silicon and wherein the oxidized organosilane layer has a carbon content of at least 1% by atomic weight; and    a silicon carbide layer on the oxidized organosilane layer.    
   
   
       8 . The structure of  claim 7 , wherein the oxidized organosilane layer has a carbon content from between about 1% and about 50% by atomic weight.  
   
   
       9 . The structure of  claim 7 , wherein the oxidized organosilane layer has a dielectric constant of about 3 or less.  
   
   
       10 . The structure of  claim 7 , wherein the oxidized organosilane layer and the silicon carbide layer have openings defining interconnects.  
   
   
       11 . The structure of  claim 7 , wherein the oxidized organosilane layer and the silicon carbide layer have copper interconnects.  
   
   
       12 . The structure of  claim 7 , wherein the oxidized organosilane layer has a carbon content of about 20% by atomic weight.  
   
   
       13 . A method of forming a structure, comprising: 
 depositing an oxidized organosilane layer on a substrate, wherein the oxidized organosilane layer comprises silicon, oxygen bonded to the silicon, and carbon bonded to the silicon and wherein the oxidized organosilane layer has a carbon content of at least 1% by atomic weight; and    forming a silicon carbide layer on the oxidized organosilane layer.    
   
   
       14 . The method of  claim 13 , wherein the oxidized organosilane layer has a carbon content from between about 1% and about 50% by atomic weight.  
   
   
       15 . The method of  claim 13 , wherein the oxidized organosilane layer has a dielectric constant of about 3 or less.  
   
   
       16 . The method of  claim 13 , wherein the oxidized organosilane layer has a carbon content of about 20% by atomic weight.