Method for forming a pattern and method of manufacturing semiconductor device

Abstract

Disclosed is a method of forming a pattern comprising coating a solution containing a compound having a silicon-nitrogen linkage in the main chain thereof over a surface of a working film to form a mask, replacing the nitrogen in the mask by oxygen, forming a resist film on a surface of the mask, forming a resist pattern by subjecting the resist film to a patterning exposure and to a developing treatment, transcribing the resist pattern to the mask to form a masking pattern, and transcribing the masking pattern to the working film to form a working film pattern.

1 - 20 . (canceled)  
     
     
         21 . A method for forming a pattern comprising: 
 coating a solution containing a compound having a semiconductor element-oxygen linkage in the main chain thereof on a surface of a working film to form a mask;    forming a resist film on a surface of said mask;    forming a resist pattern by subjecting said resist film to a patterning exposure and to a developing treatment;    transcribing said resist pattern to said mask to form a masking pattern; and    dry-etching said working film with said masking pattern as a mask to form a working film pattern;    wherein an energy beam is irradiated to said mask or to said masking pattern.    
     
     
         22 . The method for forming a pattern according to  claim 21 , wherein said semiconductor element is combined with an functional group containing hydrogen atom, hydroxyl group or carbon atom.  
     
     
         23 . The method for forming a pattern according to  claim 21 , wherein said metallic element is combined with an functional group containing hydrogen atom, hydroxyl group or carbon atom.  
     
     
         24 . The method for forming a pattern according to  claim 21 , wherein said energy beam is absorbed by said mask or said masking pattern to rise the temperature of said mask or said masking pattern.  
     
     
         25 . The method for forming a pattern according to  claim 21 , wherein said energy beam is selected from light beam, electron beam, ion beam and X-ray.  
     
     
         26 . The method for forming a pattern according to  claim 21 , wherein said energy beam is irradiated onto said mask or a pattern formed in advance in said mask with a flash lamp as a light source.  
     
     
         27 . The method for forming a pattern according to  claim 21 , wherein the irradiation of said energy beam is performed while heating said mask or said mask pattern.  
     
     
         28 . The method for forming a pattern according to  claim 21 , wherein said working film includes a compound containing carbon atom.  
     
     
         29 . The method for forming a pattern according to  claim 28 , which further comprises transcribing said working film pattern to a thin film formed in advance on an underside of said working film to obtain a thin film pattern.  
     
     
         30 . The method for forming a pattern according to  claim 29 , wherein said thin film formed on an underside of said working film is an interlayer insulating film.  
     
     
         31 . The method for forming a pattern according to  claim 21 , wherein said dry etching is performed using an oxygen-based gas or a nitrogen-based gas as a source gas.  
     
     
         32 . (canceled)  
     
     
         33 . A method for manufacturing a semiconductor device comprising: 
 forming a working film on a surface of a semiconductor substrate having element regions formed therein;    coating a solution containing a compound having a semiconductor element-oxygen linkage in the main chain thereof on a surface of a working film to form a mask;    forming a resist film on a surface of said mask;    forming a resist pattern by subjecting said resist film to a patterning exposure and to a developing treatment;    transcribing said resist pattern to said mask to form a masking pattern; and    dry-etching said working film with said masking pattern being employed as a mask to form a working film pattern;    wherein an energy beam is irradiated to said mask or to said masking pattern.