Method for toolmatching and troubleshooting a plasma processing system

Abstract

A method tests a plasma processing system having a chamber, an RF power source, and a matching network. An RF power signal is generated from the RF power source to the chamber without igniting any plasma within the chamber. The voltage of the RF power signal, the current of the RF power signal, and the phase of the RF power signal, received by the chamber is measured while holding other parameters affecting the chamber constant. A value representative of an impedance of the chamber is computed based on the voltage, the current, and the phase. The value is then compared with a reference value to determine any defects in the plasma processing system. The reference value is representative of the impedance of a defect-free chamber.

1 - 18 . (canceled)  
   
   
       19 . A plasma reactor comprising: 
 a plasmaless chamber;    an RF power source generating an RF power signal at a predetermined constant plasma operating frequency;    a matching network coupled to said RF power source;    a sensor coupled to said plasmaless chamber, said sensor measuring a voltage, a current, and a phase angle of the RF power signal received at said plasmaless chamber; and    a computer system coupled to said sensor, said computer system computing a value representative of an impedance of said plasmaless chamber based on said voltage, said current, and said phase, and comparing said value with a reference value to determine any defects in the plasma reactor, said reference value representative of the impedance of a defect-free chamber.    
   
   
       20 . The plasma reactor of  claim 19  wherein said RF power signal includes a high frequency power.  
   
   
       21 . The plasma reactor of  claim 19  wherein said RF power signal includes a low frequency power.  
   
   
       22 . A plasma reactor comprising: 
 a plasmaless chamber;    an RF power source generating an RF power signal;    a matching network coupled to said RF power source;    a sensor coupled to said plasmaless chamber, said sensor measuring a voltage, a current, and a phase angle of the RF power signal received at said plasmaless chamber; and    a computer system coupled to said sensor, said computer system computing a value representative of an impedance of said plasmaless chamber based on said voltage, said current, and said phase, and comparing said value with a reference value to determine any defects in the plasma reactor, said reference value representative of the impedance of a defect-free chamber,    wherein said computer system issues a warning when said value is not within at least about 10% of said reference value.    
   
   
       23 . The plasma reactor of  claim 22  wherein said RF power signal includes a high frequency power.  
   
   
       24 . The plasma reactor of  claim 22  wherein said RF power signal includes a low frequency power.