Semiconductor device and manufacturing method thereof

Abstract

A silicon-rich oxide (SRO) film is arranged over an uppermost third-level wiring in a semiconductor device. Then, a silicon oxide film and a silicon nitride film lying over the third-level wiring are dry-etched to expose part of the third-level wiring to thereby form a bonding pad and to form an opening over the fuse. In this procedure, the SRO film serves as an etch stopper. This optimizes the thickness of the dielectric films lying over the fuse.

1 . A semiconductor device comprising: a semiconductor substrate; and multi-level wirings arranged over the semiconductor substrate with the interposition of an interlayer dielectric film, 
 wherein a first dielectric film comprising at least a silicon oxide film and a silicon-rich oxide film is arranged over an uppermost-level wiring,    wherein a bonding pad is arranged instead of part of the first dielectric film, and    wherein a fuse is arranged in a wiring level lying under the uppermost level of wiring.    
   
   
       2 . The semiconductor device according to  claim 1 , further comprising an opening instead of part of the first dielectric film over the fuse.  
   
   
       3 . The semiconductor device according to  claim 1 , wherein the fuse is covered with an interlayer dielectric film comprising a silicon oxide film.  
   
   
       4 . The semiconductor device according to  claim 1 , wherein the silicon-rich oxide film constitutes a lowermost layer of the first dielectric film.  
   
   
       5 . A semiconductor device comprising: 
 a semiconductor substrate;    a first dielectric film arranged over the semiconductor substrate;    a silicon-rich oxide film arranged over the first dielectric film;    a first wiring arranged over the silicon-rich oxide film;    an interlayer dielectric film being arranged over the first wiring and comprising a silicon oxide film; and    a second wiring arranged over the interlayer dielectric film,    wherein the first wiring and the second wiring are electrically connected with each other via a through hole arranged in the interlayer dielectric film.    
   
   
       6 . The semiconductor device according to  claim 5 , wherein the first dielectric film comprises a silicon oxide film.  
   
   
       7 . A semiconductor device comprising: 
 a semiconductor substrate;    a first dielectric film arranged over the semiconductor substrate;    a first wiring arranged over the first dielectric film;    an interlayer dielectric film being arranged over the first wiring and comprising at least a silicon oxide film and a silicon-rich oxide film; and    a second wiring arranged over the interlayer dielectric film,    wherein the first wiring and the second wiring are electrically connected with each other via a through hole arranged in the interlayer dielectric film.    
   
   
       8 . The semiconductor device according to  claim 7 , wherein the silicon-rich oxide film constitutes a lowermost layer of the interlayer dielectric film.  
   
   
       9 . The semiconductor device according to  claim 7 , wherein the first dielectric film comprises a silicon oxide film.  
   
   
       10 . A method for manufacturing a semiconductor device, comprising the steps of: 
 (a) forming multi-level wirings over a semiconductor substrate with the interposition of an interlayer dielectric film;    (b) forming a fuse over the semiconductor substrate before the step of forming an uppermost-level wiring of the multi-level wirings;    (c) forming a first dielectric film comprising a silicon oxide film and a silicon-rich oxide film over the uppermost-level wiring; and    (d) etching the first dielectric film to expose part of the uppermost-level wiring to thereby form a bonding pad and an opening, the opening lying over the fuse.    
   
   
       11 . The method according to  claim 10 , further comprising forming the silicon-rich oxide film as a lowermost layer of the first dielectric film.  
   
   
       12 . The method according to  claim 10 , further comprising forming the fuse simultaneously with any of wirings lying under the uppermost-level wiring.  
   
   
       13 . The method according to  claim 10 , wherein in the step (d), upon etching the first dielectric film, a condition of etching the silicon oxide film and a condition of etching the silicon-rich oxide film are different from each other.  
   
   
       14 . A method for manufacturing a semiconductor device, comprising the steps of: 
 (a) forming a plurality of first-level wirings over a semiconductor substrate;    (b) forming a plurality of second-level wirings over the first level wirings via a first dielectric film;    (c) forming a second dielectric film over the second-level wirings; and    (d) selectively etching the second dielectric film to thereby form an opening over part of the second-level wirings and over part of the first-level wirings,    wherein the second dielectric film comprises at least two layers including an upper layer and a lower layer, and the lower layer has a silicon content higher than that of the upper layer.    
   
   
       15 . The method according to  claim 14 , wherein part of the first-level wirings functions as a fuse.  
   
   
       16 . The method according to  claim 14 , further comprising continuously forming the first dielectric film in one apparatus.  
   
   
       17 . The method according to  claim 14 , wherein in the step (d), upon etching the second dielectric film, a condition of etching the under layer of the second dielectric film and a condition of etching the upper layer of the second dielectric film are different from each other.  
   
   
       18 . A method for manufacturing a semiconductor device, comprising the steps of: 
 (a) forming a first dielectric film over a semiconductor substrate, and forming a silicon-rich oxide film over the first dielectric film;    (b) forming a first wiring over the silicon-rich oxide film, and forming an interlayer dielectric film over the first wiring, the interlayer dielectric film comprising a silicon oxide film;    (c) etching the interlayer dielectric film to thereby form a through hole extending to the first wiring; and    (d) forming a second wiring over the interlayer dielectric film after etching to thereby electrically connect the second wiring with the first wiring via the through hole.    
   
   
       19 . The method according to  claim 18 , wherein the first dielectric film comprises a silicon oxide film.  
   
   
       20 . A method for manufacturing a semiconductor device, comprising the steps of: 
 (a) forming a first dielectric film over a semiconductor substrate, and forming a first wiring over the first dielectric film;    (b) forming an interlayer dielectric film over the first wiring, the interlayer dielectric film comprising a silicon oxide film and a silicon-rich oxide film;    (c) etching the interlayer dielectric film to thereby form a through hole extending to the first wiring; and    (d) forming a second wiring over the interlayer dielectric film after etching to thereby electrically connect the second wiring with the first wiring via the through hole.    
   
   
       21 . The method according to  claim 20 , further comprising forming the silicon-rich oxide film as a lowermost layer of the interlayer dielectric film.  
   
   
       22 . The method according to  claim 20 , wherein the first dielectric film comprises a silicon oxide film.