Semiconductor manufacturing method and apparatus

Abstract

The present invention aims to provide processes and equipments for manufacturing semiconductors, according to which oxidation of wafer surfaces can be controlled by simple means and contaminants promoting oxidation and contaminants inviting a decreased yield of wafers can also be totally controlled. To achieve the object above, the present invention provides a process for manufacturing a semiconductor, characterized in that a substrate is treated while exposing the surface of the substrate with a negative ion-enriched gas; and an equipment for manufacturing a semiconductor comprising a gas channel through which a gas to be treated is passed; a negative ion-enriched gas generator consisting of a gas cleaner located at an upstream part of said gas channel and a negative ion generator located at a downstream part thereof: and means for supplying the resulting negative ion-enriched gas to the surface of each substrate.

1 - 8 . (canceled)  
     
     
         9 . A process for manufacturing a semiconductor, comprising: 
 treating a substrate while exposing a surface of the substrate with a negative ion-enriched gas.    
     
     
         10 . The process of  claim 9 , wherein said negative ion-enriched gas is prepared by passing a clean gas freed of microparticles and/or chemical contaminant through a negative ion generator.  
     
     
         11 . The process of  claim 10 , wherein said chemical contaminant is one or more selected from the group consisting of ionic components, inorganic matters, and organic matters.  
     
     
         12 . The process of  claim 10 , wherein said negative ion-enriched gas is prepared by passing a gas having a microparticle concentration of class 100 or less, an ionic component concentration of 10 μg/m 3  or less, and an organic matter concentration of 10 μg/m 3  or less through a negative ion generator.  
     
     
         13 . The process of  claim 9 , wherein the concentration of negative ions in said negative ion-enriched gas is 1,000 negative ions/mL or more.  
     
     
         14 . The process of  claim 9 , wherein the concentration of negative ions in said negative ion-enriched gas is 5,000 negative ions/mL or more.  
     
     
         15 . The process of  claim 9 , wherein the concentration of negative ions in said negative ion-enriched gas is 10,000 negative ions/mL or more.  
     
     
         16 . The process of  claim 9 , wherein the concentration of negative ions in said negative ion-enriched gas is 50,000 negative ions/mL or more.  
     
     
         17 . An equipment for manufacturing a semiconductor comprising: 
 a gas channel through which a gas to be treated is passed;    a negative ion-enriched gas generator including a gas cleaner located at an upstream part of said gas channel and a negative ion generator located at a downstream part of said gas channel; and    means for supplying resulting negative ion-enriched gas to a surface of a substrate.    
     
     
         18 . The equipment of  claim 17 , wherein said gas cleaner prepares a gas having a microparticle concentration of class 100 or less, an ionic component concentration of 10 μg/m 3  or less, and an organic matter concentration of 10 μg/m 3  or less.  
     
     
         19 . The equipment of  claim 17 , wherein said negative ion-enriched gas generator prepares a negative ion-enriched gas having a negative ion concentration of 1,000 negative ions/mL or more.  
     
     
         20 . The process of  claim 17 , wherein the concentration of negative ions in said negative ion-enriched gas is 5,000 negative ions/mL or more.  
     
     
         21 . The process of  claim 17 , wherein the concentration of negative ions in said negative ion-enriched gas is 10,000 negative ions/mL or more.  
     
     
         22 . The process of  claim 17 , wherein the concentration of negative ions in said negative ion-enriched gas is 50,000 negative ions/mL or more.