Method and apparatus for polishing a copper layer and method for forming a wiring structure using copper

Abstract

In a method and apparatus for polishing a Cu metal layer and a method for forming Cu metal wiring, Cu oxide created by a surface oxidation of a Cu metal layer is removed from the wafer. The Cu metal layer, in which Cu oxide is removed, is polished. By polishing the Cu metal layer using the above method, process failures, such as scratches, caused by the presence of remnants of Cu oxide during subsequent polishing can be prevented.

1 . A wafer polishing apparatus comprising: 
 a polishing head for securing and positioning a wafer to be polished;    a platen positioned opposite the polishing head and having a polishing pad on an upper surface thereof;    a slurry supplying section for supplying a slurry to the polishing pad; and    a first cleaning section for removing Cu oxide that forms on a surface of the wafer by providing a chemical onto the wafer, the first cleaning section operating on the wafer prior to polishing of the wafer by the polishing head.    
   
   
       2 . The polishing apparatus as claimed in  claim 1 , wherein the first cleaning section includes a loading part on which the wafer is fixedly placed, a transferring part for transferring the wafer to the loading part, and a chemical supplying part for spraying the chemical onto the wafer placed on the loading part.  
   
   
       3 . The polishing apparatus as claimed in  claim 1 , wherein the first cleaning section includes a reservoir part having the chemical therein, and a transferring part for transferring the wafer into the chemical present in the reservoir part.  
   
   
       4 . The polishing apparatus as claimed in  claim 1 , further comprising a second cleaning section positioned adjacent to the first cleaning section for providing a cleaning chemical to remove the chemical remaining on the wafer.