Method for exposing a photosensitive resist layer with near-field light

Abstract

In a method for exposing a photosensitive resist layer with near-field light, a liquid film layer is provided between the photosensitive resist layer and a photomask. The photomask has a light-shielding film containing an opening portion whose width is smaller than the wavelength of light emitted from a light source. The photosensitive resist layer is exposed with near-field light through the opening portion and the liquid film layer.

1 . A method for exposing a photosensitive resist layer with near-field light, comprising; 
 providing a liquid film layer between the photosensitive resist layer and a photomask, the photomask having a light-shielding film containing an opening portion whose width is smaller than the wavelength of light emitted from a light source; and    exposing the photosensitive resist layer with near-field light through the opening portion and the liquid film layer.    
     
     
         2 . A method for exposing a photosensitive resist layer with near-field light, according to  claim 1 , wherein the liquid film layer is non-corroding against the photosensitive resist layer and the photomask.  
     
     
         3 . A method for exposing a photosensitive resist layer with near-field light, according to  claim 1 , wherein the liquid film layer is transparent.  
     
     
         4 . A method for exposing a photosensitive resist layer with near-field light, according to  claim 1 , wherein the liquid film layer is inert.  
     
     
         5 . A method for exposing a photosensitive resist layer with near-field light, according to  claim 1 , wherein the liquid film layer includes at least one of pure water and glycerin.  
     
     
         6 . A method for exposing a photosensitive resist layer with near-field light, according to  claim 1 , wherein the liquid film layer is pure water including surfactant.  
     
     
         7 . A method for manufacturing a semiconductor device, comprising; 
 forming a photosensitive resist layer on a surface of a first film;    providing a liquid film layer between the photosensitive resist layer and a photomask, the photomask having a light-shielding film containing an opening portion whose width is smaller than the wavelength of light emitted from a light source;    exposing the photosensitive resist layer with near-field light through the opening portion and the liquid film layer,    forming the photosensitive resist layer into a pattern using the photomask; and    fabricating the first film using the photosensitive resist layer as a mask.