Lithographic method for molding a pattern
Abstract
The addition of thin coatings (less than and approaching monomolecular coatings) of persistent release materials comprising preferred compounds of the formula: RELEASE-M(X) n-1 — RELEASE-M(X) n-m-1 Q m , or RELEASE-M(OR) n-1 —, wherein RELEASE is a molecular chain of from 4 to 20 atoms in length, preferably from 6 to 16 atoms in length, which molecule has either polar or non-polar properties; M is a metal atom, semiconductor atom, or semimetal atom; X is halogen or cyano, especially Cl, F, or Br; Q is hydrogen or alkyl group; m is the number of Q groups; R is hydrogen, alkyl or phenyl, preferably hydrogen or alkyl of 1 to 4 carbon atoms; and; n is the valence −1 of M, and n−m−1 is at least 1 provides good release properties. The coated substrates are particularly good for a lithographic method and apparatus for creating ultra-fine (sub-25 nm) patterns in a thin film coated on a substrate is provided, in which a mold having at least one protruding feature is pressed into a thin film carried on a substrate. The protruding feature in the mold creates a recess of the thin film. The mold is removed from the film. The thin film then is processed such that the thin film in the recess is removed exposing the underlying substrate. Thus, the patterns in the mold is replaced in the thin film, completing the lithography. The patterns in the thin film will be, in subsequent processes, reproduced in the substrate or in another material which is added onto the substrate.
Claims
exact text as granted — not AI-modified1 - 43 . (canceled)
44 . A method for forming a pattern on a moldable surface on a substrate comprising the steps of:
providing the substrate including the moldable surface; providing a mold having a molding surface comprised of one or more protruding features and recessed features for imprinting a pattern comprising at least one feature having a depth of about 250 nm or less; urging together the molding surface and the moldable surface, wherein the urging comprises a process selected from the group consisting of injection molding, powder molding, blow molding, casting, cast molding, vapor deposition molding and decomposition molding; and separating the molding surface and the moldable surface to provide the moldable surface with the pattern comprising the at least one feature.
45 . The method of claim 44 wherein the urging comprises an injection molding process.
46 . The method of claim 45 wherein the pattern comprises at least one feature having a lateral dimension of about 70 nm or less and a depth of about 250 nm or less.
46 . The method of claim 44 wherein the urging comprises a powder molding process.
47 . The method of claim 46 wherein the pattern comprises at least one feature having a lateral dimension of about 70 nm or less and a depth of about 250 nm or less.
48 . The method of claim 44 wherein the urging comprises a blow molding process.
49 . The method of claim 48 wherein the pattern comprises at least one feature having a lateral dimension of about 70 nm or less and a depth of about 250 nm or less.
50 . The method of claim 44 wherein the urging comprises a casting process.
51 . The method of claim 50 wherein the pattern comprises at least one feature having a lateral dimension of about 70 nm or less and a depth of about 250 nm or less.
52 . The method of claim 44 wherein the urging comprises a cast molding process.
53 . The method of claim 52 wherein the pattern comprises at least one feature having a lateral dimension of about 70 nm or less and a depth of about 250 nm or less.
54 . The method of claim 44 wherein the urging comprises a vapor deposition molding process.
55 . The method of claim 54 wherein the pattern comprises at least one feature having a lateral dimension of about 70 nm or less and a depth of about 250 nm or less.
56 . The method of claim 44 wherein the urging comprises a decomposition process.
57 . The method of claim 56 wherein the pattern comprises at least one feature having a lateral dimension of about 70 nm or less and a depth of about 250 nm or less.Join the waitlist — get patent alerts
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