Semiconductor device having an etch stopper formed of a SiN layer by low temperature ALD and method of fabricating the same

Abstract

Provided are a semiconductor device having an etch stopper formed of a nitride film by low temperature atomic layer deposition which can prevent damage to a semiconductor substrate and a method for fabricating the semiconductor device. Damage to the semiconductor substrate under the etch stopper composed of a second nitride film can be prevented by forming a first nitride film using high temperature LPCVD on the semiconductor substrate, forming the etch stopper including the second nitride film by low temperature ALD on the first nitride film, and removing the second nitride film by dry etching, thus taking advantage of the different etch selectivities of the first nitride film and the second nitride film.

1 . A semiconductor device having an etch stopper formed of a nitride film using low temperature atomic layer deposition, the semiconductor device comprising: 
 a gate pattern which is formed on the semiconductor device and comprises a top layer formed of a first nitride film using low pressure chemical vapor deposition and a gate spacer;    an etch stopper which covers the semiconductor substrate and the gate pattern and comprises a second nitride film formed using low temperature atomic layer deposition; and    an interlayer insulating film which is formed on the etch stopper.    
   
   
       2 . The semiconductor device of  claim 1 , wherein the gate pattern of the semiconductor device comprises: 
 a gate electrode which is formed on the semiconductor substrate and comprises polysilicon; and    a suicide layer formed on the gate electrode; wherein    the top layer is formed on the silicide layer and comprises the first nitride film formed using low pressure chemical vapor deposition; and    the gate spacer is formed on the sidewalls of the gate electrode, the silicide layer, and the top layer and comprises the first nitride film formed using low pressure chemical vapor deposition.    
   
   
       3 . The semiconductor device of  claim 1 , wherein the etch stopper is formed at a temperature of 100 to 500° C.  
   
   
       4 . The semiconductor device of  claim 1 , wherein the thickness of the etch stopper is within 100 to 700 Å.  
   
   
       5 . The semiconductor device of  claim 1 , wherein the interlayer insulating film is a single film formed of an oxide film including one of SiO 2 , BPSG, HDP oxide, and Fox.  
   
   
       6 . The semiconductor device of  claim 1 , wherein the interlayer insulating film is a multi-layer film including films comprising an oxide film including one of SiO 2 , BPSG, HDP oxide, Fox.