Semiconductor light-emitting element and method of manufacturing the same

Abstract

There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.

1 . A semiconductor light-emitting element comprising: 
 a substrate having a first surface and a second surface; and    a semiconductor laminate formed on said first surface of said substrate and containing a light-emitting layer;    wherein said light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, at least 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.    
   
   
       2 . The semiconductor light-emitting element according to  claim 1 , wherein said light-extracting surface is constituted by said second surface of substrate.  
   
   
       3 . The semiconductor light-emitting element according to  claim 2 , wherein said substrate is formed of a transparent substrate.  
   
   
       4 . The semiconductor light-emitting element according to  claim 1 , wherein said light-extracting surface is constituted by an outermost surface of said semiconductor laminate.  
   
   
       5 . The semiconductor light-emitting element according to  claim 1 , wherein at least one of said projected portions is formed of a cone-shaped configuration having an apex angle ranging from 20 to 80 degrees.  
   
   
       6 . The semiconductor light-emitting element according to  claim 1 , wherein at least one of said projected portions is provided, at the apex thereof, with a very small transparent portion constituted by a material which differs in kind from the material of said light-extracting surface.  
   
   
       7 . The semiconductor light-emitting element according to  claim 1 , wherein at least one of said projected portions is provided with a flat apex.  
   
   
       8 . The semiconductor light-emitting element according to  claim 1 , wherein at least one of said projected portions is provided with a flat apex, on which a very small transparent portion is disposed, said very small transparent portion being formed of a material differing in kind from the material of said light-extracting surface.  
   
   
       9 . The semiconductor light-emitting element according to  claim 2 , wherein said substrate is provided, on said second surface, with a transparent oxide film or a transparent nitride film, and said finely recessed/projected portions are constituted by a surface of said transparent oxide film or of said transparent nitride film.  
   
   
       10 . The semiconductor light-emitting element according to  claim 4 , wherein said semiconductor laminate comprises a current diffusion layer is disposed at the uppermost layer of said semiconductor laminate, and said finely recessed/projected portions exists on an exposed surface of said current diffusion layer.  
   
   
       11 . The semiconductor light-emitting element according to  claim 10 , wherein said current diffusion layer is provided, on the exposed surface thereof, with a transparent oxide film or a transparent nitride film, and said finely recessed/projected portions are formed on a surface of said transparent oxide film or of said transparent nitride film.  
   
   
       12 - 23 . (canceled)