Electroetching process and system

Abstract

A system for optionally depositing or etching a layer of a wafer includes mask plate opposed to the wafer with the mask plate having a plurality of openings that transport a solution to the wafer. An electrode assembly has a first electrode member and a second electrode member having channels that operatively interface a peripheral and center part of the wafer. The channels transport the solution to the mask.

1 . A system for etching a wafer having a conductive front surface, the system comprising: 
 a cathode assembly having at least two cathode members, wherein each cathode members has the ability to receive its own power; and    a first etching solution contacting said at least two cathode members, wherein the cathode members are electrically isolated from one another.    
   
   
       2 . The system of  claim 1 , wherein the at least two cathode members comprises a first and a second cathode members.  
   
   
       3 . The system of  claim 2 , wherein said first cathode member operatively interfaces a first part of said conductive surface of said wafer.  
   
   
       4 . The system of  claim 3 , wherein said second cathode member operatively interfaces a second part of said conductive surface of said wafer.  
   
   
       5 . The system of  claim 4 , wherein said first part comprises a peripheral area of said wafer.  
   
   
       6 . The system of  claim 5 , wherein said second part comprises a center area of said wafer.  
   
   
       7 . The system of  claim 1 , further comprising a mask plate disposed between said wafer and at least one of said first and second cathode members.  
   
   
       8 . The system of  claim 7 , wherein said mask plate is disposed between said wafer and both of said first and second cathode members.  
   
   
       9 . The system of  claim 8 , wherein said mask plate comprises at least one opening that transports said first etching solution to said first and second part of said conductive surface.  
   
   
       10 . The system of  claim 9 , wherein said first and second cathode members each comprise at least one channel that transports said first etching solution to said mask.  
   
   
       11 . The system of  claim 10 , wherein said first etching solution is delivered to said first cathode member through a first cathode cup and to said second cathode member through a second cathode cup wherein said first and second cathode cups are electrically isolated from one another.  
   
   
       12 . The system of  claim 11 , wherein said first and second cathode cups are in fluid communication with a first storage tank containing said first etching solution.  
   
   
       13 . The system of  claim 12 , wherein flow rate of said first etching solution through said first cathode member and flow rate of said first etching solution through said second cathode member are the same.  
   
   
       14 . The system of  claim 13 , wherein flow rate of said first etching solution through said first cathode member and flow rate of said first etching solution through said second cathode member are different.  
   
   
       15 . The system of  claim 11 , wherein said first cathode cup is in fluid communication with said first storage tank and said second cup is in fluid communication with a second storage cup wherein said second storage tank contains a second etching solution.  
   
   
       16 . The system of  claim 15 , wherein etching abilities of said first and second etching solutions are different.  
   
   
       17 . The system of  claim 15 , wherein flow rate of said first etching solution through said first cathode member and flow rate of said second etching solution through said second cathode member are different.  
   
   
       18 . The system of  claim 15 , wherein flow rate of said first etching solution through said first cathode member and flow rate of said second etching solution through said second cathode member are the same.  
   
   
       19 . A system for optionally depositing or removing a layer of a wafer, comprising: 
 a mask plate opposed to said wafer;    said mask plate having a plurality of openings that transport a solution to said wafer;    an electrode assembly having a first electrode member and a second electrode member;    said first electrode member having a plurality of first channels that operatively interface a first part of said wafer;    said first channels transport said solution to said mask;    said second electrode member having a plurality of second channels that operatively interface a second part of said wafer; and    said second channels transport said solution to said mask.    
   
   
       20 . The system of  claim 19 , wherein said electrode assembly comprises a cathode assembly, said first electrode member comprises a first cathode member, and said second electrode member comprises a second cathode member.  
   
   
       21 . The system of  claim 20 , wherein said solution comprises an electroetching solution.  
   
   
       22 . The system of  claim 19 , wherein said electrode assembly comprises an anode assembly, said first electrode member comprises a first anode member, and said second electrode member comprises a second anode member.  
   
   
       23 . The system of  claim 22 , wherein said solution comprises a deposition solution.  
   
   
       24 . The system of  claim 19 , wherein said first and second electrode members have differing shapes.  
   
   
       25 . The system of  claim 19 , wherein said first and second electrode members have the same shapes.  
   
   
       26 . The system of  claim 25 , wherein the first and second electrode members have a circular shape.  
   
   
       27 . The system of  claim 26 , wherein the first and second electrode members are concentrically disposed to one another.  
   
   
       28 . The system of  claim 25 , wherein the first and second electrode members have a rectangular shape.  
   
   
       29 . The system of  28 , wherein said first and second electrode members are disposed side-by-side to one another.  
   
   
       30 . The system of  claim 19 , wherein said first electrode member operatively interfaces a peripheral part of said wafer.  
   
   
       31 . The system of  claim 30 , wherein said second electrode member operatively interfaces a center part of said wafer.