Apparatus for forming thin layers of materials on micro-device workpieces

Abstract

A method of forming a layer on a micro-device workpiece includes dispensing a first pulse of a first precursor at a first region of the workpiece to flow toward a second region of the workpiece. The second region of the workpiece is located radially outward relative to the first region of the workpiece. The embodiment of this method further includes dispensing a first pulse of a purge gas at the first region of the workpiece to flow toward the second region of the workpiece after terminating the first pulse of the first precursor. Additionally, this embodiment also includes dispensing a second pulse of a first precursor at the second region of the workpiece to flow radially outward concurrently with dispensing the first pulse of a purge gas in the first region of the workpiece. The first pulse of the purge gas is terminated at the first region of the workpiece, and the second pulse of the first precursor is terminated at the second region. At this stage, the method further includes dispensing a first pulse of a second precursor at the first region of the workpiece to flow radially outward toward the second region, and dispensing a second pulse of the purge gas at the second region of the workpiece to flow radially outward concurrently with the first pulse of the second precursor in the first region. A single cycle of the process can further include dispensing a third pulse of the purge gas onto the first region of the workpiece to flow radially outward after terminating the first pulse of the second precursor, and concurrently dispensing a second pulse of the second precursor in the second region to flow radially outward.

1 - 29 . (canceled)  
   
   
       30 . A reactor for forming a layer of material on a micro-device workpiece, comprising: 
 a reaction chamber having an inlet and an outlet;    a workpiece support in the reaction chamber between the inlet and the outlet, the workpiece support having a first zone and a second zone located radially outward relative to the first zone;    a gas distributor in the reaction chamber between the inlet and the workpiece support, the gas distributor comprising a first dispensing section and a second dispensing section located radially outward relative to the first dispensing section, first dispensing section being configured to dispense at least one of a first precursor, a purge gas or a second precursor over the first zone, and the second dispensing section being configured to dispense a different one of the first precursor, the purge gas or the second precursor over the second zone independently from the first dispensing section.    
   
   
       31 . The reactor of  claim 30  wherein the gas distributor comprises: 
 a gas box to receive flows of the first precursor, the purge gas and the second precursor;    a distributor plate having a plurality of first passageways juxtaposed to the first zone of the support and a plurality of second passageways juxtaposed to the second zone of the support, wherein the distributor plate is proximate to the gas box; and    an annular divider in the gas box aligned with a boundary between the first zone and the second zone, the divider forming a first compartment over the first passageways that defines the first dispensing section and a second compartment over the second passageways that defines the second dispensing section.    
   
   
       32 . The reactor of  claim 30  wherein the gas distributor comprises: 
 a distributor plate having a plurality of first passageways juxtaposed to the first    zone of the support and a plurality of second passageways juxtaposed to the second zone of the support, wherein the distributor plate is proximate to the gas box;    a first set of purge gas lines coupled to a purge gas set of the first passageways;    a second set of purge gas lines coupled to a purge gas set of the second passageways;    a first set of first precursor lines coupled to a first precursor set of the first passageways;    a second set of first precursor lines coupled to a first precursor set of the second passageway;    a first set of second precursor lines coupled to a second precursor set of the first passage ways; and    a second set of second precursor lines coupled to a second precursor set of the second passageways.    
   
   
       33 . The reactor of  claim 30  wherein the gas distributor further comprises a third dispensing section radially outward from the second dispensing section, the third dispensing section being configured to dispense one of the first precursor, the second precursor or the purge gas over a third zone of the workpiece support that is located radially outward from the second zone of the workpiece support.  
   
   
       34 . The reactor of  claim 30  wherein the first dispensing section has a circular shape over the first zone and the second dispensing section has an annular shape over the second zone.  
   
   
       35 . The reactor of  claim 30  wherein: 
 the first dispensing section has a circular shape over the first zone;    the second dispensing section has an annular shape over the second zone; and    the gas dispenser has a third dispensing section having an annular shape radially outward from the second dispensing section.    
   
   
       36 . A reactor for forming a layer of material on a micro-device workpiece, comprising: 
 a reaction chamber having an inlet and an outlet;    a gas distributor in the reaction chamber between the inlet and the outlet, the gas distributor having a plenum, a first divider that partitions the plenum into a center compartment and a first annular compartment radially outward from the center compartment, and a distributor plate having a plurality of first openings in the first compartment and a plurality of second openings in the second compartment.    
   
   
       37 . A reactor for forming a layer of material on a micro-device workpiece, comprising: 
 a reaction chamber having an inlet and an outlet;    a workpiece support in the reaction chamber between the inlet and the outlet, the workpiece support having a first zone and a second zone located radially outward relative to the first zone;    a gas distributor in the reaction chamber between the inlet and the workpiece support, the gas distributor having a first plurality of conduits in a first section juxtaposed to the first zone and a second plurality of conduits in a second section juxtaposed to the second zone, wherein the first plurality of conduits are coupled to a gas supply to selective dispense at least one of a first precursor, a purge gas or a second precursor over the first zone, and wherein the second plurality of conduits are coupled to the gas supply to concurrently dispense a different one of the first precursor, the purge gas or the second precursor over the second zone.    
   
   
       38 . A system for forming a layer of material on a surface of a micro-device workpiece, comprising: 
 a gas supply assembly having a first gas source for a first precursor, a second gas source for a second precursor, and a third gas source for a purge gas;    a reaction chamber coupled to the gas supply;    a workpiece support in the reaction chamber, the support member having a first zone and a second zone located radially outward relative to the first zone;    a gas distributor in the reaction chamber, the gas distributor being coupled to the gas supply assembly, and the gas distributor having a first dispensing section juxtaposed to the first zone of the support and a second dispensing section juxtaposed to the second zone of support; and    a controller coupled to the gas supply assembly, wherein the controller contains computer readable instructions that cause the gas supply to 
 dispense a first pulse of a first precursor through the first dispensing section;  
 dispense a first pulse of a purge gas through the first dispensing section after terminating the first pulse of the first precursor; and  
 dispense a second pulse of the first precursor through the second dispensing section concurrently while dispensing the first pulse of the purge gas.  
   
   
   
       39 . A system for forming a layer of material on a surface of a microelectronic workpiece, comprising: 
 a gas supply assembly having a first gas source for a first precursor, a second gas source for a second precursor, and a third gas source for a purge gas;    a reaction chamber coupled to the gas supply; a workpiece support in the reaction chamber;    a gas distributor in the reaction chamber, the gas distributor being coupled to the gas supply assembly, and the gas distributor having a first dispensing section juxtaposed to a central zone of the support and a second dispensing section juxtaposed to an outer annular zone; and    a controller coupled to the gas supply assembly, wherein the controller contains computer readable instructions that cause the gas supply to 
 dispense a first pulse of a first precursor from the first dispensing section to flow radially outward over the central zone;  
 dispense a first pulse of a purge gas from the first dispensing section to flow radially outward over the central zone after terminating the first pulse of the first precursor; and  
 dispense a second pulse of the first precursor from the second section to flow radially outward over the outer annular zone while concurrently dispensing the first pulse of the purge gas.