Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters

Abstract

A RF sensor for sensing and analyzing parameters of plasma processing. The RF sensor is provided with a plasma processing tool and an antenna for receiving RF energy radiated from the plasma processing tool. The antenna is located proximate to the plasma processing tool so as to be non-invasive. Additionally, the RF sensor may be configured for wideband reception of multiple harmonics of the RF energy that is radiated from the plasma processing tool. Further, the RF sensor may be coupled to a high pass filter and a processor for processing the received RF energy. Additionally, the antenna may be located within an enclosure with absorbers to reduce the interference experienced by the RF sensor. Additionally, a tool control may be coupled to the processor to provided to adjust and maintain various parameters of plasma processing according to the information provided by the received RF energy.

1 . A RF sensor for sensing parameters of plasma processing, said RF sensor comprising: 
 a plasma processing tool having a plasma processing region; and    an antenna for receiving RF energy radiated from said plasma processing tool;    wherein, said received RF energy comprises a fundamental frequency and a plurality of harmonic frequencies, and    wherein, said antenna is located so as to be outside of said plasma processing region.    
   
   
       2 . The RF sensor of  claim 1  further comprising: 
 a processor, said processor being coupled to said antenna for processing said RF energy received from said antenna.    
   
   
       3 . The RF sensor of  claim 2 , wherein said processor further comprises: 
 a filter coupled to said antenna;    an amplifier coupled to said filter; and    a data processing device coupled to said amplifier.    
   
   
       4 . The RF sensor of  claim 3 , wherein said data processing device is configurable to support at least two input signals independently.  
   
   
       5 . The RF sensor of  claim 3 , wherein said filter is a high pass filter.  
   
   
       6 . The RF sensor of  claim 3 , wherein said amplifier is a low noise amplifier.  
   
   
       7 . The RF sensor of  claim 3 , further comprising: 
 a user interface coupled to said data processing device; and    an external computer coupled to said data processing device;    wherein said user interface and said external computer are configured to allow a user to interact with said data processing device.    
   
   
       8 . The RF sensor of  claim 7 , wherein said user interface is a touch screen monitor.  
   
   
       9 . The RF sensor of  claim 3 , wherein said data processing device is coupled to a network for allowing a user to interact with said data processing device remotely.  
   
   
       10 . The RF sensor of  claim 2 , wherein said processor is configured to perform at least one of spectral analysis and harmonic content analysis of said RF energy.  
   
   
       11 . The RF sensor of  claim 1 , wherein said antenna is a broadband mono-pole antenna.  
   
   
       12 . A method for sensing parameters of plasma processing, said method comprising: 
 providing an antenna proximate to a plasma processing tool but outside of the plasma processing region; and    sensing RF energy radiated from said plasma processing tool.    
   
   
       13 . The method according to  claim 12 , further comprising: 
 processing said RF energy, wherein said processing includes at least one of spectral analysis and harmonic content analysis of said RF energy.