CMP process using slurry containing abrasive of low concentration

Abstract

A CMP process using a slurry containing an abrasive of low concentration is disclosed. More specifically, a planarization process is performed using the slurry containing an abrasive of low concentration of less than 0.1 wt % unlike the conventional CMP slurry, thereby improving uniformity of a CMP process in a manufacture process of a semiconductor device to secure yield and reliability of the device. Particularly, since the disclosed slurry has the more excellent effect of achieving the planarization degree than that of the conventional slurry, the thickness of deposited films before the CMP process can be reduced, and the CMP amount can also be minimized.

1 . A method for manufacturing a semiconductor device wherein a CMP (Chemical Mechanical Polishing) planarization process is performed using a CMP slurry, wherein the CMP slurry contains an abrasive having a concentration ranging from 0.01 to 0.1 wt % of the CMP slurry.  
   
   
       2 . The method according to  claim 1 , wherein the concentration of the abrasive ranges from 0.01 to 0.09 wt %.  
   
   
       3 . The method according to  claim 1 , wherein the abrasive is selected from a group consisting of CeO 2 , SiO 2 , MnO 2  and combinations thereof.  
   
   
       4 . The method according to  claim 1 , wherein the CMP planarization process comprises an interlayer insulating film planarization process, a STI CMP process, a landing plug poly CMP process, a tungsten CMP process, an aluminum CMP process or a copper CMP process.  
   
   
       5 . The method according to  claim 4 , wherein a BPSG oxide film, a PSG oxide film, a TEOS oxide film, a P—SiH 4  film, a SiN film or a polysilicon film is polished in the interlayer insulating film planarization process.  
   
   
       6 . The method according to  claim 4 , wherein the slurry used in the STI CMP process comprises an additive selected from a group consisting of an anionic additive, a cationic additive or a non-ionic additive.  
   
   
       7 . The method according to  claim 6 , wherein the anioinic additive is selected from a group consisting of carboxylic acid, sulfuric acid ester, sulfonic acid, phosphoric acid ester and salts thereof. 
 the cationic additive is selected from a group consisting of primary amine, secondary amine, tertiary amine, quaternary amine and salts thereof, and    the non-ionic additive is selected from a group consisting of a polyethyleneglycol-type surfactant and a polyhydroxy alcohol-type surfactant.    
   
   
       8 . The method according to  claim 6 , wherein an amount of the additive ranges from 0.005 to 1 wt % of the slurry.