Mask, method of production of same, and method of production of semiconductor device

Abstract

A mask capable of alignment by the TTR system and complementary division and having a high strength, a method of production of the same, and a method of production of a semiconductor device having a high pattern accuracy are provided. A stencil mask having stripe-shaped grid lines 4 formed by etching a silicon wafer in four sub-regions A to D on a membrane, having the stripes arranged point symmetrically about a center of the membrane, and having all of the grid lines connected to other grid lines or the silicon wafer around the membrane (support frame), a method of production of the same, and a method of production of a semiconductor device using the mask.

1 . A mask comprising: 
 a support frame;    a thin film made formed thinner than said support frame and surrounded by said support frame;    a first sub-region of a plurality of sub-regions obtained by dividing said thin film by a plurality of lines including a first line passing through a reference point consisting of one point on said thin film and extending in a first direction and a second line orthogonal to the first line at the reference point and extending in a second direction;    a second sub-region adjacent to said first sub-region in the first direction;    a third sub-region adjacent to said first sub-region in the second direction;    a fourth sub-region adjacent to said second sub-region in the second direction and adjacent to said third sub-region in the first direction;    a first group of grid lines comprised of at least one grid line extending on said first sub-region in the second direction and having one end connected to one of a third group of grid lines to reinforce said thin film, said first group of grid lines including a grid line contacting the second line;    a second group of grid lines comprised of at least one grid line extending on said second sub-region in the first direction and having one end connected to one of said first group of grid lines to reinforce said thin film, said second group of grid lines including a grid line contacting the first line;    said third group of grid lines comprised of at least one grid line extending on said third sub-region in the first direction and having one end connected to one of a fourth group of grid lines to reinforce said thin film, said third group of grid lines including a grid line contacting the first line;    said fourth group of grid lines comprised of at least one grid line extending on said fourth sub-region in the second direction and having one end connected to one of said second group of grid lines to reinforce said thin film, said fourth group of grid lines including a grid line contacting the second line;    a first aperture formed at a part of a portion other than the grid lines in the first sub-region; and    a second aperture formed at a part of a portion other than the grid lines in at least one sub-region of the second to fourth sub-regions.    
     
     
         2 . A mask as set forth in  claim 1 , wherein the first aperture and the second aperture form patterns complementarily.  
     
     
         3 . A mask as set forth in  claim 1 , wherein the grid lines are formed at equal intervals in each of the first to fourth sub-regions.  
     
     
         4 . A mask as set forth in  claim 3 , wherein a space between the grid lines of the third group is equal to the space between the grid lines of the second group.  
     
     
         5 . A mask as set forth in  claim 4 , wherein a space between the grid lines of the fourth group is same as a space between the grid lines of the first group.  
     
     
         6 . A mask as set forth in  claim 1 , wherein the first to fourth sub-regions are squares or rectangles the same as each other in shape and size.  
     
     
         7 . A mask as set forth in  claim 1 , wherein the grid lines of at least one of group among the first to fourth groups are formed to having other ends connected to the support frame.  
     
     
         8 . A mask as set forth in  claim 1 , wherein the first and second apertures are holes through which a charged particle beam passes.  
     
     
         9 - 11 . (canceled)  
     
     
         12 . A method of production of a mask comprising the steps of: 
 forming a support frame around a thin film,    forming grid lines reinforcing said thin film at a part on one surface of said thin film, and    forming apertures in the thin film at portions other than the grid lines, wherein    said step of forming the grid lines comprising the step of forming a first group of grid lines in a first sub-region of said thin film, forming a second group of grid lines in a second sub-region of said thin film, forming a third group of grid lines in a third sub-region of said thin film, and forming a fourth group of grid lines in a fourth sub-region of said thin film;    said first sub-region is one of a plurality of sub-regions obtained by dividing said thin film by a plurality of lines including a first line passing through a reference point consisting of one point on said thin film and extending in a first direction and a second line perpendicular to the first line at the reference point and extending in a second direction;    said second sub-region is a sub-region adjacent to said first sub-region in the first direction,    said third sub-region is a sub-region adjacent to said first sub-region in the second direction,    said fourth sub-region is a sub-region adjacent to said second sub-region in the second direction and adjacent to said third sub-region in the first direction,    said first group of grid lines is comprised of at least one grid line extending on the first sub-region in the second direction and having one end connected to one of a third group of grid lines to reinforce the thin film and including a grid line contacting the second line,    said second group of grid lines is comprised of at least one grid line extending on the second sub-region in the first direction and having one end connected to one of the first group of grid lines to reinforce the thin film and includes a grid line contacting the first line,    said third group of grid lines is comprised of at least one grid line extending on the third sub-region in the first direction and having one end connected to one of a fourth group of grid lines to reinforce the thin film and includes a grid line contacting the first line,    said fourth group of grid lines is comprised of at least one grid line extending on the fourth sub-region in the second direction and having one end connected to one of the second group of grid lines to reinforce the thin film and includes a grid line contacting the second line, and    the step of forming the apertures comprises forming a first aperture at a part of a portion other than the grid lines in the first sub-region and forming a second aperture at a part of a portion other than the grid lines in at least one sub-region of the second to fourth sub-regions.    
     
     
         13 - 18 . (canceled)