Chemical vapor deposition methods

Abstract

A chemical vapor deposition chamber has a vacuum exhaust line extending therefrom. Material is deposited over a first plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line. At least a portion of the vacuum exhaust line is isolated from the deposition chamber. While isolating, a cleaning fluid is flowed to the vacuum exhaust line effective to at least reduce thickness of the effluent product over the internal walls within the vacuum exhaust line from what it was prior to initiating said flowing. After said flowing, the portion of the vacuum exhaust line, and the deposition chamber are provided in fluid communication with one another and material is deposited over a second plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line.

1 - 59 . (canceled)  
     
     
         60 . A chemical vapor deposition method comprising: 
 providing a chemical vapor deposition chamber and a deposition vacuum pump in selective fluid communication therewith through a first valve assembly and a first portion of a vacuum exhaust line;    depositing material over a substrate within the deposition chamber under conditions which cause an effluent product to be deposited within the vacuum exhaust line;    actuating said first valve assembly to isolate at least the first portion of the vacuum exhaust line and the deposition vacuum pump from the deposition chamber;    flowing a cleaning fluid to the first portion of the vacuum exhaust line thereby reducing deposits of the effluent product within the vacuum exhaust line relative to prior to initiating said flowing, and causing at least some of said cleaning fluid to bypass the deposition vacuum pump; and    reestablishing fluid communication between said first portion of the vacuum exhaust line and the deposition chamber.    
     
     
         61 . The method of  claim 60  comprising isolating at least the first portion of the vacuum exhaust line and the deposition vacuum pump from the deposition chamber before flowing any of said cleaning fluid.  
     
     
         62 . The method of  claim 60  comprising isolating at least the first portion of the vacuum exhaust line and the deposition vacuum pump from the deposition chamber after starting flowing of said cleaning fluid.  
     
     
         63 . The method of  claim 60  wherein the first portion is at least a majority portion.  
     
     
         64 . The method of  claim 60  wherein the cleaning fluid comprises gas.  
     
     
         65 . The method of  claim 60  wherein the cleaning fluid consists essentially of gas.  
     
     
         66 . The method of  claim 60  wherein the cleaning fluid comprises liquid.  
     
     
         67 . The method of  claim 60  wherein the cleaning fluid consists essentially of liquid.  
     
     
         68 . The method of  claim 60  wherein the cleaning fluid comprises gas and liquid.  
     
     
         69 . The method of  claim 60  comprising ceasing flowing of all said cleaning fluid prior said reestablishing of fluid communication.  
     
     
         70 . The method of  claim 60  comprising ceasing flowing of all said cleaning fluid after said reestablishing of fluid communication.  
     
     
         71 . The method of  claim 60  comprising heating the cleaning fluid within the vacuum exhaust line during the flowing.  
     
     
         72 . The method of claim . 60  wherein the cleaning fluid comprises a gas, and further comprising generating a plasma with the cleaning gas within the exhaust line during the flowing.  
     
     
         73 . The method of  claim 60  wherein the cleaning fluid comprises a gas, and further comprising generating a plasma with the cleaning gas external of the exhaust line during the flowing.  
     
     
         74 . A chemical vapor deposition method comprising: 
 providing a chemical vapor deposition chamber having a vacuum exhaust line extending therefrom, an isolation valve configured to isolate a majority section of the exhaust line and the deposition chamber from one another, a deposition vacuum pump in fluid communication with the vacuum exhaust line, the exhaust line including a cleaning fluid inlet thereto proximate and downstream of the isolation valve, the exhaust line having a cleaning fluid outlet upstream of the deposition vacuum pump;    depositing at least one material over a substrate within the deposition chamber, wherein such depositing causes at least one effluent product to deposit on internal walls of the vacuum exhaust line;    after the depositing, actuating said isolation valve to isolate said majority section of the vacuum exhaust line and the deposition chamber from one another;    flowing a cleaning fluid into the cleaning fluid inlet and through said vacuum exhaust line, and causing at least a portion of the cleaning fluid to pass out the cleaning fluid outlet whereby volume of the effluent on the internal walls within the vacuum exhaust line is reduced from what it was prior to initiating said flowing; and    after said flowing, operating the isolation valve to restablish fluid communication between the vacuum exhaust line and the deposition chamber.    
     
     
         75 . The method of  claim 74  comprising heating the cleaning fluid within the vacuum exhaust line during the flowing.  
     
     
         76 . The method of  claim 74  wherein the cleaning fluid comprises a gas, and further comprising generating a plasma with the cleaning gas within the exhaust line during the flowing.  
     
     
         77 . The method of  claim 74  wherein the cleaning fluid comprises a gas, and further comprising generating a plasma with the cleaning gas external of the exhaust line during the flowing.  
     
     
         78 . The method of  claim 74  wherein the isolation valve is received within six inches of an outlet from the deposition chamber.  
     
     
         79 . The method of  claim 74  wherein the isolation valve is received within twelve inches of an outlet from the deposition chamber.  
     
     
         80 . The method of  claim 74  comprising isolating said majority section of the vacuum exhaust line and the deposition chamber from one another before flowing any of said cleaning fluid.  
     
     
         81 . The method of  claim 74  comprising isolating said majority section of the vacuum exhaust line and the deposition chamber from one another after starting flowing of said cleaning fluid.  
     
     
         82 . The method of  claim 74  wherein the cleaning fluid comprises gas.  
     
     
         83 . The method of  claim 74  wherein the cleaning fluid consists essentially of gas.  
     
     
         84 . The method of  claim 74  wherein the cleaning fluid comprises liquid.  
     
     
         85 . The method of  claim 74  wherein the cleaning fluid consists essentially of liquid.  
     
     
         86 . The method of  claim 74  wherein the cleaning fluid comprises gas and liquid.  
     
     
         87 . The method of  claim 74  comprising ceasing flowing of all said cleaning fluid prior to said reestablishing of fluid communication.  
     
     
         88 . The method of  claim 74  comprising ceasing flowing of all said cleaning fluid after said reestablishing of fluid communication.