Magnetic memory

Abstract

It is possible to reduce writing current without causing fluctuation of the writing characteristic. A magnetic memory includes: a magnetoresistance effect element having a magnetization pinned layer whose magnetization direction is pinned, a storage layer whose magnetization direction is changeable, and a non-magnetic layer provided between the magnetization pinned layer and the storage layer; and a first wiring layer which is electrically connected to the magnetoresistance effect element and extends in a direction substantially perpendicular to a direction of an easy magnetization axis of the storage layer, an end face of the magnetoresistance effect element substantially perpendicular to the direction of the easy magnetization axis of the storage layer and an end face of the first wiring layer substantially perpendicular to the direction of the easy magnetization axis being positioned on the same plane.

1 . A magnetic memory comprising: 
 a magnetoresistance effect element having a magnetization pinned layer whose magnetization direction is pinned, a storage layer whose magnetization direction is changeable, and a non-magnetic layer provided between the magnetization pinned layer and the storage layer; and    a first wiring layer which is electrically connected to the magnetoresistance effect element and extends in a direction substantially perpendicular to a direction of an easy magnetization axis of the storage layer,    an end face of the magnetoresistance effect element substantially perpendicular to the direction of the easy magnetization axis of the storage layer and an end face of the first wiring layer substantially perpendicular to the direction of the easy magnetization axis being positioned on the same plane.    
   
   
       2 . A magnetic memory according to  claim 1 , further comprising a first yoke which covers at least a face of the first wiring layer positioned on the opposite side from a face thereof electrically connecting to the magnetoresistance effect element.  
   
   
       3 . A magnetic memory according to  claim 2 , wherein a direction of an easy magnetization axis of the first yoke and the direction of the easy magnetization axis of the magnetoresistance effect element are substantially perpendicular to each other.  
   
   
       4 . A magnetic memory according to  claim 2 , wherein a barrier metal layer is provided between the first wiring layer and the first yoke.  
   
   
       5 . A magnetic memory according to  claim 1 , wherein a thickness of the first wiring layer is 30 nm or less.  
   
   
       6 . A magnetic memory according to  claim 1 , further comprising a second wiring layer which is connected to a face of the magnetoresistance effect element which is positioned on the opposite side from a face thereof electrically connected to the first wiring layer and extends in the direction crossing a direction in which the first wiring layer extends.  
   
   
       7 . A magnetic memory according to  claim 6 , further comprising a second yoke which covers at least a face of the second wiring layer positioned on the opposite side from a face thereof electrically connecting to the magnetoresistance effect element.  
   
   
       8 . A magnetic memory according to  claim 7 , wherein a barrier metal layer is provided between the second wiring layer and the second yoke.  
   
   
       9 . A magnetic memory comprising: 
 a magnetoresistance effect element which has a magnetization pinned layer whose magnetization direction is pinned, a storage layer whose magnetization direction is changeable, and a non-magnetic layer provided between the magnetization pinned layer and the storage layer, and whose film face shape has a long axis and a short axis; and    a first wiring layer which is electrically connected to the magnetoresistance effect element,    an end face of the magnetoresistance effect element extending along the short axis of the magnetoresistance effect element and a side face of the first wiring layer extending along a longitudinal direction of the first wiring layer being positioned on the same plane.    
   
   
       10 . A magnetic memory according to  claim 9 , further comprising a first yoke which covers at least a face of the first wiring layer positioned on'the opposite side from a face thereof electrically connecting to the magnetoresistance effect element.  
   
   
       11 . A magnetic memory according to  claim 9 , wherein a thickness of the first wiring layer is 30 nm or less.  
   
   
       12 . A magnetic memory according to  claim 10 , wherein a barrier metal layer is provided between the first wiring layer and the first yoke.  
   
   
       13 . A magnetic memory according to  claim 9 , further comprising a second wiring layer which is connected to a face of the magnetoresistance effect element which is positioned on the opposite side from a face thereof electrically connected to the first wiring layer and extends in a direction crossing a direction in which the first wiring layer extends.  
   
   
       14 . A magnetic memory according to  claim 13 , further comprising a second yoke which covers at least a face of the second wiring layer positioned on the opposite side from a face thereof electrically connecting to the magnetoresistance effect element.  
   
   
       15 . A magnetic memory according to  claim 14 , wherein a barrier metal layer is provided between the second wiring layer and the second yoke.  
   
   
       16 . A method for manufacturing a magnetic memory comprising: 
 stacking a magnetoresistance effect film which serves as a magnetoresistance effect element and comprises a first magnetic layer serving as a magnetization pinned layer whose magnetization direction is pinned, a second magnetic layer serving as a storage layer whose magnetization direction is changeable, and a non-magnetic layer provided between the first magnetic layer and the second magnetic layer to serve as a tunnel barrier layer, and a wiring film serving as a wire; and    patterning the magnetoresistance effect film and the wiring film such that an end face of the magnetoresistance effect element substantially perpendicular to a direction of an easy magnetization axis of the storage layer and an end face of the wiring film substantially perpendicular to the direction of the easy magnetization axis are positioned on the same plane.    
   
   
       17 . A method for manufacturing a magnetic memory comprising: 
 stacking a magnetoresistance effect film which serves as a magnetoresistance effect element and comprises a first magnetic layer serving as a magnetization pinned layer whose magnetization direction is pinned, a second magnetic layer serving as a storage layer whose magnetization direction is changeable, and a non-magnetic layer provided between the first magnetic layer and the second magnetic layer to serve as a tunnel barrier layer and whose film face shape has a long axis and a short axis, and a wiring film serving as a wire; and    patterning the magnetoresistance effect film and the wiring film such that an end face of the magnetoresistance effect element extending along the short axis of the magnetoresistance effect element and a side face of the wiring layer extending along a longitudinal axis of the wire are positioned on the same plane.    
   
   
       18 . A magnetic memory which has memory cells, each comprising: 
 a storage element having a magnetic recording layer whose magnetization direction changes according to external magnetic field, a magnetization pinned layer whose magnetization direction is pinned, and a non-magnetic layer provided between the magnetic recording layer and the magnetization pinned layer;    a writing wire which is provided on the opposite side of the magnetic recording layer from the non-magnetic layer and in which writing current flows; and    a yoke which is provided on the opposite side of the writing wire from the magnetic recording layer,    a pair of opposed side faces of the storage element being positioned on the same plane as a pair of opposed side faces of each of the writing wire and the yoke, and    a relative magnetic permeability of the magnetic recording layer being 5 or more.    
   
   
       19 . A magnetic memory according to  claim 18 , wherein a longitudinal axis of the magnetic recording layer is inclined to a direction perpendicular to a direction in which the writing wire extends by an angle of 45°.  
   
   
       20 . A magnetic memory according to  claim 18 , wherein a plan shape of the magnetic recording layer is asymmetrical regarding a direction perpendicular to a direction in which the writing wire extends.  
   
   
       21 . A magnetic memory according to  claim 18 , wherein a plan shape of the magnetic recording layer has the maximum width at a central portion thereof in a direction perpendicular to a direction in which the writing wire extends.  
   
   
       22 . A magnetic memory according to  claim 18 , wherein a relative magnetic permeability of the yoke is in a range of 80 or more and 120 or less.  
   
   
       23 . A magnetic memory according to  claim 18 , wherein the yoke is formed of material with a high melting point.  
   
   
       24 . A magnetic memory according to  claim 18 , where the memory cell is provided with a selecting transistor which selects the memory cell.  
   
   
       25 . A magnetic memory which has memory cells, each comprising: 
 a storage element having a magnetic recording layer whose magnetization direction changes according to external magnetic field, a magnetization pinned layer whose magnetization direction is pinned, and a non-magnetic layer provided between the magnetic recording layer and the magnetization pinned layer;    a writing wire which is provided on the opposite side of the magnetic recording layer from the non-magnetic layer and in which writing current flows; and    a yoke which is provided on the opposite side of the writing wire from the magnetic recording layer,    a longitudinal axis of the magnetic recording layer being inclined to a direction perpendicular to a direction in which the writing wire extends by an angle of more than 0° and less than 90°, and    a relative magnetic permeability of the magnetic recording layer being 5 or more.    
   
   
       26 . A magnetic memory according to  claim 25 , wherein a longitudinal axis of the magnetic recording layer is inclined to a direction perpendicular to a direction in which the writing wire extends by an angle of 45°.  
   
   
       27 . A magnetic memory according to  claim 25 , wherein a pair of opposed side faces of the storage element are positioned on the same plane as a pair of opposed side faces of each of the writing wire and the yoke.  
   
   
       28 . A magnetic memory according to  claim 25 , wherein a plan shape of the magnetic recording layer is asymmetrical regarding a direction perpendicular to a direction in which the writing wire extends.  
   
   
       29 . A magnetic memory according to  claim 25 , wherein a plan shape of the magnetic recording layer has the maximum width at a central portion thereof in a direction perpendicular to a direction in which the writing wire extends.  
   
   
       30 . A magnetic memory according to  claim 25 , wherein a relative magnetic permeability of the yoke is in a range of 80 or more and 120 or less.  
   
   
       31 . A magnetic memory according to  claim 25 , wherein the yoke is formed of material with a high melting point.  
   
   
       32 . A magnetic memory according to  claim 25 , where the memory cell is provided with a selecting transistor which selects the memory cell.  
   
   
       33 . A magnetic memory which has memory cells, each comprising: 
 a storage element having a magnetic recording layer whose magnetization direction changes according to external magnetic field, a magnetization pinned layer whose magnetization direction is pinned, and a non-magnetic layer provided between the magnetic recording layer and the magnetization pinned layer;    a writing wire which is provided on the opposite side of the magnetic recording layer from the non-magnetic layer and in which writing current flows; and    a yoke which is provided on the opposite side of the writing wire from the magnetic recording layer,    a longitudinal axis of the magnetic recording layer being inclined to a direction perpendicular to a direction which the writing wire extends by an angle of more than 0° and less than 90°, and    a pair of opposed side faces of the storage element being positioned on the same plane as a pair of opposed side faces of each of the writing wire and the yoke.    
   
   
       34 . A magnetic memory according to  claim 33 , where the memory cell is provided with a selecting transistor which selects the memory cell.