US2005140025A1PendingUtilityA1
Direct attach chip scale package
Priority: Mar 16, 2000Filed: Feb 24, 2005Published: Jun 30, 2005
Est. expiryMar 16, 2020(expired)· nominal 20-yr term from priority
Inventors:Masood Murtuza
H10W 72/07251H10W 72/942H10W 72/877H10W 72/20H10W 90/701H10W 74/129H10W 40/25H10W 40/10
45
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Claims
Abstract
A reliable, chip scale or flip chip semiconductor device which can be directly attached to a PC board without the use of an underfill material to absorb stress on the solder joints interconnecting the device and board is provided by a silicon chip, having the substrate thinned until the chip thickness is in the range of 50 to 250 microns, attaching a backing or cap layer with specific thermal properties to approximate those of a printed circuit board (PCB), and providing solder bump contacts attached to the input/output terminals.
Claims
exact text as granted — not AI-modified1 - 9 . (canceled)
10 . A method of forming a direct attach semiconductor device including the following steps:
a) providing a semiconductor wafer with a plurality of integrated circuits fabricated on the first surface, and thinning said wafer from the second surface to about 50 to 250 microns thick, b) laminating a backing layer, comprising a material having an expansion coefficient similar to that of a printed circuit board, onto the second surface of said wafer, c) dicing said wafer into individual chips, d) affixing a flex film interposer preformed to the chip size and shape to the active surface of said chip, e) thermally processing the assemblage to cross-link adhesives of both the backing and interposer layers, and f) attaching solder balls to input/output lands on the interposer.
11 . A method of fabricating a direct attach semiconductor device as in claim 11 wherein a backing layer is molded onto the second surface of said diced chips.
12 . A method of fabricating a direct attach semiconductor device wherein an interposer is fabricated on the first surface of said wafer by thin film metallization patterned on a thin film dielectric layer to reroute input/output contacts to a preselected area array,
b) thinning said wafer from the backside to a thickness of 50 to 250 microns, c) laminating a backing layer comprising a material having an expansion coefficient similar to that of a printed circuit board onto the second surface of said wafer, d) dicing said wafer into individual chips, e) thermally processing the assemblage to cross-link adhesives of the backing layer, and f) attaching solder balls to input/output lands on the interposer.
13 . A method of fabricating a direct attach semiconductor device wherein an interposer is fabricated on the first surface of said wafer by thin film metallization patterned on a thin film dielectric layer to reroute input/output contacts to a preselected area array, contacts to a preselected area array,
b) thinning said wafer from the backside to a thickness of 50 to 250 microns, c) molding a backing layer having an expansion coefficient similar to that of a printed circuit board onto the second surface of said wafer, d) attaching solder balls to input/output lands on the interposer, and e) dicing said wafer into individual chips.Join the waitlist — get patent alerts
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