Ceramic thin film on various substrates, and process for producing same

Abstract

A thin film of an amorphous silicon-based material on a substrate. The thin film has the property of any one of a carrier concentration of 10 13 to 10 18 cm −3 in a depletion zone next to the substrate, an electron mobility of 5 to 30 cm 2 V −1 s −1 , a dangling bond concentration of 10 12 to 10 19 cm −3 , no solvent-related defects, or a residual hydrogen concentration of 0 to 25 atomic %. The thin film may be used to fabricate many devices such as solar cells, light-emitting diodes, transistors, photothyristors, and integrated monolithic devices on a single chip.

1 . A film of an amorphous silicon-based material on a substrate, the film having a carrier concentration of 10 13  to 10 18  cm −3  in a depletion zone next to the substrate.  
   
   
       2 . The film according to  claim 1 , wherein the carrier concentration is 10 13  to 10 17  cm −3  in a depletion zone next to the substrate.  
   
   
       3 . The film according to  claim 1 , wherein the carrier concentration is 10 13  to 10 16  cm −3  in a depletion zone next to the substrate.  
   
   
       4 . The film according to  claim 1 , wherein the amorphous silicon-based material is an amorphous silicon carbide.  
   
   
       5 . The film according to  claim 1 , wherein the amorphous silicon-based material is an amorphous silicon carbonitride.  
   
   
       6 . The film according to  claim 1 , wherein the amorphous silicon-based material is an amorphous silicon nitride.  
   
   
       7 . The film according to  claim 1 , wherein the amorphous silicon-based material is an amorphous silicon oxynitride.  
   
   
       8 . The film according to  claim 1 , wherein the amorphous silicon-based material is an amorphous silicon oxy(carbo)nitride.  
   
   
       9 . The film according to  claim 1 , wherein the amorphous silicon-based material is an amorphous silicon oxycarbide.  
   
   
       10 . The film according to  claim 1  further comprising a dopant.  
   
   
       11 . The film according to  claim 10 , wherein the dopant is selected from the group consisting N, B, O, H, Cl, Al, Ga, In, Tl, P, As, Sb, O, S, Se, Te, and Bi.  
   
   
       12 . The film according to  claim 1 , wherein the substrate is selected from the group consisting of quartz, metal, ceramic, electronic-grade sintered alumina, polished alumina, silicon single crystal wafer, graphite, and stainless steel.  
   
   
       13 . The film according to  claim 1 , wherein the film has a thickness of at least 100 Å.  
   
   
       14 . The film according to  claim 1 , wherein the film has a grain size of 2-10 nm.  
   
   
       15 . The film according to  claim 1 , wherein the film has a grain size of 2-5 nm.  
   
   
       16 . The film according to  claim 1 , wherein the film has a grain size of 2-3 nm.  
   
   
       17 . A film of an amorphous silicon-based material on a substrate, the film having an electron mobility of 5 to 30 cm 2 V −1 s −1 .  
   
   
       18 . The film according to  claim 17 , wherein the electron mobility is 10 to 25 cm 2 V −1 s −1 .  
   
   
       19 . The film according to  claim 17 , wherein the electron mobility is 15 to 20 cm 2 V −1 s −1 .  
   
   
       20 . The film according to  claim 17 , wherein the amorphous silicon-based material is an amorphous silicon carbide.  
   
   
       21 . The film according to  claim 17 , wherein the amorphous silicon-based material is an amorphous silicon carbonitride.  
   
   
       22 . The film according to  claim 17 , wherein the amorphous silicon-based material is an amorphous silicon nitride.  
   
   
       23 . The film according to  claim 17 , wherein the amorphous silicon-based material is an amorphous silicon oxynitride.  
   
   
       24 . The film according to  claim 17 , wherein the amorphous silicon-based material is an amorphous silicon oxy(carbo)nitride.  
   
   
       25 . The film according to  claim 17 , wherein the amorphous silicon-based material is an amorphous silicon oxycarbide.  
   
   
       26 . The film according to  claim 17  further comprising a dopant.  
   
   
       27 . The film according to  claim 26 , wherein the dopant is selected from the group consisting N, B, O, H, Cl, Al, Ga, In, Tl, P, As, Sb, O, S, Se, Te, and Bi.  
   
   
       28 . The film according to  claim 17 , wherein the substrate is selected from the group consisting of quartz, metal, ceramic, electronic-grade sintered alumina, polished alumina, silicon single crystal wafer, graphite, and stainless steel.  
   
   
       29 . The film according to  claim 17 , wherein the film has a thickness of at least 100 Å.  
   
   
       30 . The film according to  claim 17 , wherein the film has a grain size of 2-10 nm.  
   
   
       31 . The film according to  claim 17 , wherein the film has a grain size of 2-5 nm.  
   
   
       32 . The film according to  claim 17 , wherein the film has a grain size of 2-3 nm.  
   
   
       33 . A film of an amorphous silicon-based material on a substrate, the film having a dangling bond concentration of 10 12  to 10 19  cm −3 .  
   
   
       34 . The film according to  claim 33 , wherein the dangling bond concentration is 10 13  to 10 18  cm −3 .  
   
   
       35 . The film according to  claim 33 , wherein the dangling bond concentration is 10 14  to 10 17  cm −3 .  
   
   
       36 . The film according to  claim 33 , wherein the amorphous silicon-based material is an amorphous silicon carbide.  
   
   
       37 . The film according to  claim 33 , wherein the amorphous silicon-based material is an amorphous silicon carbonitride.  
   
   
       38 . The film according to  claim 33 , wherein the amorphous silicon-based material is an amorphous silicon nitride.  
   
   
       39 . The film according to  claim 33 , wherein the amorphous silicon-based material is an amorphous silicon oxynitride.  
   
   
       40 . The film according to  claim 33 , wherein the amorphous silicon-based material is an amorphous silicon oxy(carbo)nitride.  
   
   
       41 . The film according to  claim 33 , wherein the amorphous silicon-based material is an amorphous silicon oxycarbide.  
   
   
       42 . The film according to  claim 33  further comprising a dopant.  
   
   
       43 . The film according to  claim 42 , wherein the dopant is selected from the group consisting N, B, O, H, Cl, Al, Ga, In, Tl, P, As, Sb, O, S, Se, Te, and Bi.  
   
   
       44 . The film according to  claim 33 , wherein the substrate is selected from the group consisting of quartz, metal, ceramic, electronic-grade sintered alumina, polished alumina, silicon single crystal wafer, graphite, and stainless steel.  
   
   
       45 . The film according to  claim 33 , wherein the film has a thickness of at least 100 Å.  
   
   
       46 . The film according to  claim 33 , wherein the film has a grain size of 2-10 nm.  
   
   
       47 . The film according to  claim 33 , wherein the film has a grain size of 2-5 nm.  
   
   
       48 . The film according to  claim 33 , wherein the film has a grain size of 2-3 nm.  
   
   
       49 . A film of an amorphous silicon-based material on a substrate, the film having no solvent-related defects.  
   
   
       50 . The film according to  claim 49 , wherein the solvent-related defects are voids in the film due solvent evaporation or solvent trapped in the film during deposition.  
   
   
       51 . The film according to  claim 49 , wherein the amorphous silicon-based material is an amorphous silicon carbide.  
   
   
       52 . The film according to  claim 49 , wherein the amorphous silicon-based material is an amorphous silicon carbonitride.  
   
   
       53 . The film according to  claim 49 , wherein the amorphous silicon-based material is an amorphous silicon nitride.  
   
   
       54 . The film according to  claim 49 , wherein the amorphous silicon-based material is an amorphous silicon oxynitride.  
   
   
       55 . The film according to  claim 49 , wherein the amorphous silicon-based material is an amorphous silicon oxy(carbo)nitride.  
   
   
       56 . The film according to  claim 49 , wherein the amorphous silicon-based material is an amorphous silicon oxycarbide.  
   
   
       57 . The film according to  claim 49  further comprising a dopant.  
   
   
       58 . The film according to  claim 57 , wherein the dopant is selected from the group consisting of N, B, O, H, Cl, Al, Ga, In, Tl, P, As, Sb, O, S, Se, Te, and Bi.  
   
   
       59 . The film according to  claim 49 , wherein the substrate is selected from the group consisting of quartz, metal, ceramic, electronic-grade sintered alumina, polished alumina, silicon single crystal wafer, graphite, and stainless steel.  
   
   
       60 . The film according to  claim 49 , wherein the film has a thickness of at least 100 Å.  
   
   
       61 . The film according to  claim 49 , wherein the film has a grain size of 2-10 nm.  
   
   
       62 . The film according to  claim 49 , wherein the film has a grain size of 2-5 nm.  
   
   
       63 . The film according to  claim 49 , wherein the film has a grain size of 2-3 nm.  
   
   
       64 . A film of an amorphous silicon-based material on a substrate, the film having a residual hydrogen concentration of 0 to 25 atomic %.  
   
   
       65 . A film of an amorphous silicon-based material on a substrate, the thin film having a residual hydrogen concentration of 0 to 20 atomic %.  
   
   
       66 . A film of an amorphous silicon-based material on a substrate, the thin film having a residual hydrogen concentration of 0 to 15 atomic %.  
   
   
       67 . The film according to  claim 64 , wherein the amorphous silicon-based material is an amorphous silicon carbide.  
   
   
       68 . The film according to  claim 64 , wherein the amorphous silicon-based material is an amorphous silicon carbonitride.  
   
   
       69 . The film according to  claim 64 , wherein the amorphous silicon-based material is an amorphous silicon nitride.  
   
   
       70 . The film according to  claim 64 , wherein the amorphous silicon-based material is an amorphous silicon oxynitride.  
   
   
       71 . The film according to  claim 64 , wherein the amorphous silicon-based material is an amorphous silicon oxy(carbo)nitride.  
   
   
       72 . The film according to  claim 64 , wherein the amorphous silicon-based material is an amorphous silicon oxycarbide.  
   
   
       73 . The film according to  claim 64  further comprising a dopant.  
   
   
       74 . The film according to  claim 73 , wherein the dopant is selected from the group consisting of N, B, O, H, Cl, Al, Ga, In, Tl, P, As, Sb, O, S, Se, Te, and Bi.  
   
   
       75 . The film according to  claim 64 , wherein the substrate is selected from the group consisting of quartz, metal, ceramic, electronic-grade sintered alumina, polished alumina, silicon single crystal wafer, graphite, and stainless steel.  
   
   
       76 . The film according to  claim 64 , wherein the film has a thickness of at least 100 Å.  
   
   
       77 . The film according to  claim 64 , wherein the film has a grain size of 2-10 nm.  
   
   
       78 . The film according to  claim 64 , wherein the film has a grain size of 2-5 nm.  
   
   
       79 . The film according to  claim 64 , wherein the film has a grain size of 2-3 nm.  
   
   
       80 . A semiconductor device comprising a film of an amorphous silicon-based material on a substrate, the film having a carrier concentration of 10 13  to 10 18  cm −3  in a depletion zone next to the substrate.  
   
   
       81 . The semiconductor device according to  claim 80 , wherein the device is a p-type or an n-type.  
   
   
       82 . The semiconductor device according to  claim 80 , wherein the device is selected from the group consisting of a solar cell, a light-emitting diode, a Schottky diode, a transistor, a photothyristor and an integrated monolithic device on a single chip.  
   
   
       83 . A semiconductor device comprising a film of an amorphous silicon-based material on a substrate, the film having an electron mobility of 5 to 30 cm 2 V −1 s −1 .  
   
   
       84 . The semiconductor device according to  claim 83 , wherein the device is a p-type or an n-type.  
   
   
       85 . The semiconductor device according to  claim 83 , wherein the device is selected from the group consisting of a solar cell, a light-emitting diode, a Schottky diode, a transistor, a photothyristor and an integrated monolithic device on a single chip.  
   
   
       86 . A semiconductor device comprising a film of an amorphous silicon-based material on a substrate, the film having a dangling bond concentration of 10 12  to 10 19  cm −3 .  
   
   
       87 . The semiconductor device according to  claim 86 , wherein the device is a p-type or an n-type.  
   
   
       88 . The semiconductor device according to  claim 86 , wherein the device is selected from the group consisting of a solar cell, a light-emitting diode, a Schottky diode, a transistor, a photothyristor and an integrated monolithic device on a single chip.  
   
   
       89 . A semiconductor device comprising a film of an amorphous silicon-based material on a substrate, the film having no solvent-related defects.  
   
   
       90 . The semiconductor device according to  claim 89 , wherein the device is a p-type or an n-type.  
   
   
       91 . The semiconductor device according to  claim 89 , wherein the device is selected from the group consisting of a solar cell, a light-emitting diode, a Schottky diode, a transistor, a photothyristor and an integrated monolithic device on a single chip.  
   
   
       92 . A semiconductor device comprising a film of an amorphous silicon-based material on a substrate, the film having a residual hydrogen concentration of 0 to 25 atomic %.  
   
   
       93 . The semiconductor device according to  claim 92 , wherein the device is a p-type or an n-type.  
   
   
       94 . The semiconductor device according to  claim 92 , wherein the device is selected from the group consisting of a solar cell, a light-emitting diode, a Schottky diode, a transistor, a photothyristor and an integrated monolithic device on a single chip.