US2005136672A1PendingUtilityA1
Etching solution composition for metal films
Assignee: NIIGATA SANYO ELECTRONIC CO LTPriority: Dec 3, 2003Filed: Dec 2, 2004Published: Jun 23, 2005
Est. expiryDec 3, 2023(expired)· nominal 20-yr term from priority
H10P 50/667C09K 13/08C23F 1/20
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Claims
Abstract
The present invention aims to provide an etching solution composition which enables to etch a metal film in a controllable manner, form a desired definite tapered shape, and obtain a smooth surface without causing etching solution exudation trace. Said problems have been solved by the present invention, which is an etching solution composition for etching metal films containing one or more surfactants selected from the group consisting of alkyl sulfate or perfluoroalkenyl phenyl ether sulfonic acid and the salts thereof.
Claims
exact text as granted — not AI-modified1 . An etching solution composition for etching a metal film, comprising one or more sufactants selected from the group consisting of alkyl sulfate or perfluoroalkenyl phenyl ether sulfonic acid, and the salts thereof.
2 . The etching solution composition according to claim 1 , wherein the salt of alkyl sulfate is the salt of alkyl sulfate and triethanolamine or monoethanolamine.
3 . The etching solution composition according to claim 1 , wherein the concentration of the surfactant is 0.001% to 10% by mass.
4 . The etching solution composition according to claim 1 , comprising phosphoric acid, nitric acid, acetic acid, and water.
5 . The etching solution composition according to claim 1 , wherein the metal film is of aluminum or an aluminum alloy.Join the waitlist — get patent alerts
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