Light-emitting device using a group III nitride compound semiconductor and a method of manufacture

Abstract

A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.

1 - 2 . (canceled)  
   
   
       3 . A light-emitting semiconductor device comprising: 
 a substrate;    plurality of semiconductor layers which comprise group III nitride group compound semiconductor laminated on the substrate;    an emission layer formed on a first side of the substrate;    a mirror structure formed on a second side of the substrate opposite the first side, the mirror structure comprising a light transmission layer having luminous transparency comprising at least one material selected from a group consisting of metal oxides and ceramics, and a metal reflective layer suitable for reflecting light emitted from the emission layer; and    a corrosion-resistant layer which comprises at least one of a metal oxide and a ceramic material formed on an exposed surface of the mirror structure.    
   
   
       4 . (canceled)  
   
   
       5 . A light-emitting device according to  claim 3 , wherein the reflective layer is formed by using at least one metal from a group consisting of aluminum (Al), Silver (Ag), and their alloys.  
   
   
       6 . (canceled)  
   
   
       7 . A light-emitting device according to  claim 3 , wherein a thickness of said reflective layer is in a range of 5 nm to 20 μm.  
   
   
       8 . (canceled)  
   
   
       9 . A light-emitting device according to  claim 3 , wherein said light transmission layer comprises at least one material selected from a group of metal oxides and oxides consisting of Al 2 O 3 , TiO 2 , MgO, MgCO 3 , Ta 2 O 5 , ZnO, In 2 O 3 , SiO 2 , SnO 2 , and ZrO 2 .  
   
   
       10 . (canceled)  
   
   
       11 . A light-emitting device according to  claim 5 , wherein said light transmission layer comprises at least one material selected from a group of metal oxides and oxides consisting of Al 2 O 3 , TiO 2 , MgO, MgCO 3 , Ta 2 O 5 , ZnO, In 2 O 3 , SiO 2 , SnO 2 , and ZrO 2 .  
   
   
       12 . (canceled)  
   
   
       13 . A light-emitting device according to  claim 7 , wherein said light transmission layer comprises at least one material selected from a group of metal oxides and oxides consisting of Al 2 O 3 , TiO 2 , MgO, MgCO 3 , Ta 2 O 5 , ZnO, In 2 O 3 , SiO 2 , SnO 2 , and ZrO 2 .  
   
   
       14 - 15 . (canceled)  
   
   
       16 . A light-emitting device according to  claim 9 , wherein a thickness of said light transmission layer is in a range of 5 nm to 10 μm.  
   
   
       17 . (canceled)  
   
   
       18 . A light-emitting device according to  claim 11 , wherein a thickness of the light transmission layer is in a range of about 5 nm to 10 μm.  
   
   
       19 . (canceled)  
   
   
       20 . A light-emitting device according to  claim 13 , wherein a thickness of the light transmission layer is in a range of about 5 nm to 10 μm.  
   
   
       21 - 28 . (canceled)  
   
   
       29 . A light-emitting device using a group III nitride group compound semiconductor according to  claim 9 , wherein the reflective layer comprises at least one metal selected from a group consisting to rhodium (Rh), ruthenium (Ru), platinum (Pt), gold (Au), copper (Cu), palladium (Pd), chromium (Cr), nickel (Ni), cobalt (Co), titanium (Ti), indium (In), molybdenum (Mo), and their alloys.  
   
   
       30 - 37 . (canceled)