Method for processing a wafer and apparatus for performing the same

Abstract

Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and second cooling parts adjust an ambient temperature near a plurality of wafers to a first temperature, the wafers are processed by introducing a reaction gas at the first temperature, then, a heating part rapidly raises the temperature of the atmosphere near the wafers from the first temperature to the second temperature to partially separate by-products produced during the processing, the second temperature is maintained to separate most of the by-products from the wafers, and the processing steps are implemented in-situ within the same space. Accordingly, a native oxide layer formed on several wafers can be etched and the reaction by-products can be removed in-situ in the same chamber so productivity is improved.

1 . A method for processing a wafer comprising: 
 i) adjusting an ambient temperature near a wafer to a first temperature;    ii) introducing a reaction gas onto the wafer at the first temperature for processing the wafer;    iii) rapidly raising the ambient temperature near the wafer to a second temperature higher than the first temperature for partially separating by-products produced during the processing of the wafer in (ii) from the wafer; and    iv) maintaining the second temperature for separating most of the by-products from the ambient of the wafer,    wherein i) to iv) are implemented in-situ within a same space.    
   
   
       2 . A method for processing a wafer as claimed in  claim 1 , wherein the first temperature is about 15 to 30° C.  
   
   
       3 . A method for processing a wafer as claimed in  claim 2 , wherein the ambient temperature near the wafer is adjusted to the first temperature using a cooling agent selected from the group consisting of liquefied nitrogen, carbon dioxide and cooling water.  
   
   
       4 . A method for processing a wafer as claimed in  claim 3 , wherein the cooling agent is in a mixture form of more than one cooling agents.  
   
   
       5 . A method for processing a wafer as claimed in  claim 1 , wherein processing the wafer includes etching a native oxide layer formed on the wafer using a reaction gas.  
   
   
       6 . A method for processing a wafer as claimed in  claim 5 , wherein etching the native oxide layer comprises: 
 a) using the reaction gas including a fluoride-containing compound,    b) using one of a carrier gas selected from the group consisting of nitrogen gas, hydrogen gas and a mixture thereof, and    c) using a remote plasma.    
   
   
       7 . A method for processing a wafer as claimed in  claim 6 , wherein the fluoride-containing compound is NF 3 .  
   
   
       8 . A method for processing a wafer as claimed in  claim 5 , wherein the etching of the native oxide layer is implemented for about 20 to 40 seconds.  
   
   
       9 . A method for processing a wafer as claimed in  claim 8 , wherein the etching of the native oxide layer is implemented for about 30 seconds.  
   
   
       10 . A method for processing a wafer as claimed in  claim 1 , wherein the second temperature is about 100 to 200° C.  
   
   
       11 . A method for processing a wafer as claimed in  claim 1 , wherein a temperature rising rate from the first temperature to the second temperature is about 35 to 92.5° C. per minute.  
   
   
       12 . A method for processing a wafer as claimed in  claim 11 , wherein the ambient temperature near the wafer reaches to the second temperature using a halogen lamp.  
   
   
       13 . A method for processing a wafer as claimed in  claim 1 , wherein most of the by-products are separated from the wafer during iv) through a vaporization.  
   
   
       14 . A method for processing a wafer as claimed in  claim 1 , wherein iii) and iv) are implemented for a combined time of about 150 to 210 seconds.  
   
   
       15 . A method for processing a wafer as claimed in  claim 14 , wherein iii) and iv) are implemented for a combined time of about 180 seconds.  
   
   
       16 . A method for processing a wafer as claimed in  claim 1 , wherein a plurality of wafers is processed simultaneously.  
   
   
       17 . A method for processing a wafer as claimed in  claim 1 , further comprising: 
 v) lowering the ambient temperature near the wafer from the second temperature to the first temperature.    
   
   
       18 . A method for processing a wafer as claimed in  claim 17 , wherein a temperature lowering rate from the second temperature to the first temperature is in the range of about 14 to 37° C. per minute.  
   
   
       19 . A method for processing a wafer as claimed in  claim 17 , wherein the lowering of the ambient temperature to the first temperature is accomplished using any one of a cooling agent selected from the group consisting of liquefied nitrogen, carbon dioxide and cooling water.  
   
   
       20 . A method for processing a wafer as claimed in  claim 19 , wherein the cooling agent is in a mixture form of more than one cooling agent.  
   
   
       21 . A method for processing a wafer as claimed in  claim 17 , wherein v) is implemented in-situ with i) to iv) within the same space.  
   
   
       22 . A method for processing a wafer as claimed in  claim 17 , wherein a plurality of wafers are processed simultaneously.  
   
   
       23 . A method for etching a predetermined layer formed on a wafer comprising: 
 i) adjusting a temperature in a chamber, in which a plurality of wafers on which a predetermined material layer is formed are introduced, to a temperature of about 15 to 30° C. suitable for etching the predetermined material layer;    ii) introducing an etching gas into the chamber at a temperature of about 15 to 30° C. for dry etching the predetermined material layer formed on the wafer;    iii) rapidly raising the temperature in the chamber to a temperature of about 100 to 200° C. for heating the wafer to partially vaporize by-products produced during implementing the dry etching and to drive out the by-products from an ambient of the wafer;    iv) maintaining the temperature in the chamber at about 100 to 200° C. for vaporizing and driving out the by-products from the ambient of the wafer and from an inner portion of the chamber; and    v) lowering and re-adjusting the temperature in the chamber to a temperature of about 15 to 30° C. suitable for implementing the etching,    wherein i) to v) are implemented in-situ within a same space.    
   
   
       24 . A method for etching a predetermined layer formed on a wafer as claimed in  claim 23 , wherein the temperature for implementing the etching is accomplished using any one of a cooling agent selected from the group consisting of liquefied nitrogen, carbon dioxide and cooling water.  
   
   
       25 . A method for etching a predetermined layer formed on a wafer as claimed in  claim 24 , wherein the cooling agent is in a mixture form of more than one cooling agent.  
   
   
       26 . A method for etching a predetermined layer formed on a wafer as claimed in  claim 23 , wherein the predetermined material includes a native oxide and an etching of the native oxide comprises: 
 a) using a reaction gas including a fluoride-containing compound,    b) using any one of a carrier gas selected from the group consisting of nitrogen gas, hydrogen gas and a mixture thereof, and    c) using a remote plasma.    
   
   
       27 . A method for etching a predetermined layer formed on a wafer as claimed in  claim 26 , wherein the fluoride-containing compound is NF 3 .  
   
   
       28 . A method for etching a predetermined layer formed on a wafer as claimed in  claim 26 , wherein the etching of the native oxide is implemented for about 20 to 40 seconds.  
   
   
       29 . A method for etching a predetermined layer formed on a wafer as claimed in  claim 28 , wherein the etching of the native oxide is implemented for about 30 seconds.  
   
   
       30 . A method for etching a predetermined layer formed on a wafer as claimed in  claim 23 , wherein a rising rate of the temperature in the chamber from a range of about 15 to 30° C. to a range of about 100 to 200° C. is about 35 to 92.5° C. per minute.  
   
   
       31 . A method for etching a predetermined layer formed on a wafer as claimed in  claim 23 , wherein iii) and iv) are implemented for a combined time of about 150 to 210 seconds.  
   
   
       32 . A method for etching a predetermined layer formed on a wafer as claimed in  claim 31 , wherein iii) and iv) are implemented for a combined time of about 180 seconds.  
   
   
       33 . A method for etching a predetermined layer formed on a wafer as claimed in  claim 23 , wherein a lowering rate of the temperature in the chamber from the range of 100 to 200° C. to the range of 15 to 30° C. is about 14 to 37° C. per minute.  
   
   
       34 - 72 . (canceled)