Semiconductor device structures including metal silicide interconnects and dielectric layers at substantially the same fabrication level

Abstract

A semiconductor device includes a metal silicide interconnect structure and a dielectric layer that are located at substantially the same fabrication level. The metal silicide interconnect and dielectric layer may be fabricated by forming an amorphous or polycrystalline silicon layer on a substrate including at least one gate structure, forming a layer of silicon nitride over the silicon layer, removing a portion of the silicon nitride layer, oxidizing the exposed portion of the silicon layer, removing the remaining portion of the silicon nitride layer, optionally removing the oxidized silicon layer, forming a metal layer over the resulting structure, annealing the metal layer in an atmosphere comprising nitrogen, and removing any metal nitride regions. The local metal silicide interconnect structure may overlie the at least one gate structure.

1 . A semiconductor device structure, comprising: 
 at least one active device region;    at least one transistor gate structure positioned laterally adjacent to the at least one active device region; and    an interconnect comprising a layer including metal silicide and positioned to directly contact the at least one active device region; and    a film comprising dielectric material at substantially the same fabrication level of the semiconductor device structure as the interconnect.    
   
   
       2 . The semiconductor device structure of  claim 1 , wherein the interconnect is positioned to extend at least partially over the at least one transistor gate structure.  
   
   
       3 . The semiconductor device structure of  claim 2 , wherein the interconnect is also positioned to extend substantially over another transistor gate structure of the semiconductor device structure.  
   
   
       4 . The semiconductor device structure of  claim 1 , wherein the metal silicide comprises titanium silicide, tantalum silicide, or cobalt silicide.  
   
   
       5 . The semiconductor device structure of  claim 1 , wherein the metal silicide comprises titanium silicide.  
   
   
       6 . The semiconductor device structure of  claim 1 , wherein the at least one active device region comprises an n-well.  
   
   
       7 . The semiconductor device structure of  claim 1 , wherein the film comprising dielectric material comprises a silicon oxide.  
   
   
       8 . The semiconductor device structure of  claim 1 , further comprising: 
 a film comprising a metal nitride over at least portions of the film comprising dielectric material.    
   
   
       9 . A semiconductor device structure, comprising: 
 a substrate comprising semiconductor material;    at least one structure positioned adjacent to an active surface of the substrate;    an interconnect comprising a layer including metal silicide located over the active surface and adjacent to the at least one structure; and    a film comprising dielectric material at substantially the same fabrication level of the semiconductor device structure as the interconnect.    
   
   
       10 . The semiconductor device structure of  claim 9 , further comprising: 
 at least one active device region within the semiconductor material.    
   
   
       11 . The semiconductor device structure of  claim 10 , wherein the interconnect contacts the at least one active device region.  
   
   
       12 . The semiconductor device structure of  claim 10 , wherein the at least one active device region comprises an n-well.  
   
   
       13 . The semiconductor device structure of  claim 9 , wherein the at least one structure comprises a transistor gate structure.  
   
   
       14 . The semiconductor device structure of  claim 13 , wherein the dielectric material comprises at least a side wall of the transistor gate structure.  
   
   
       15 . The semiconductor device structure of  claim 9 , wherein the dielectric material comprises at least one of a silicon oxide and a silicon nitride.  
   
   
       16 . The semiconductor device structure of  claim 9 , wherein the metal silicide comprises a refractory metal silicide.  
   
   
       17 . The semiconductor device structure of  claim 16 , wherein the refractory metal silicide comprises titanium silicide, tantalum silicide, or cobalt silicide.  
   
   
       18 . The semiconductor device structure of  claim 9 , wherein the metal silicide comprises titanium silicide.  
   
   
       19 . The semiconductor device structure of  claim 9 , wherein at least a portion of the interconnect is located adjacent to the dielectric material of the at least one structure.  
   
   
       20 . The semiconductor device structure of  claim 19 , wherein the dielectric material of the at least one structure comprises at least one of a silicon oxide and a silicon nitride.