US2005130326A1PendingUtilityA1

Method for fabricating capacitor in semiconductor device

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Assignee: HYNIX SEMICONDUCTOR INCPriority: Dec 10, 2003Filed: Jun 30, 2004Published: Jun 16, 2005
Est. expiryDec 10, 2023(expired)· nominal 20-yr term from priority
Inventors:Kee-Jeung LeeJae-Sung Roh
H10P 14/69397H10P 14/6339H10P 14/662H10P 14/6334H10P 14/69392H10D 1/716H10D 1/712H10D 1/042C23C 16/56C23C 16/45531C23C 16/405H10B 12/033H10B 12/00
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Claims

Abstract

The present invention relates to a method for fabricating a capacitor in a semiconductor device through the use of hafnium-terbium oxide (Hf 1-x Tb x O) as a dielectric layer. The method includes the steps of: forming a lower electrode on a substrate; forming an amorphous hafnium-terbium oxide (Hf 1-x Tb x O) dielectric layer on the lower electrode; crystallizing the Hf 1-x Tb x O dielectric layer by performing a thermal process; and forming an upper electrode on the Hf 1-x Tb x O dielectric layer.

Claims

exact text as granted — not AI-modified
1 . A method for fabricating a capacitor in a semiconductor device, comprising the steps of: 
 forming a lower electrode on a substrate;    forming an amorphous hafnium-terbium oxide (Hf 1-x Tb x O) dielectric layer on the lower electrode;    crystallizing the Hf 1-x Tb x O dielectric layer by performing a thermal process; and    forming an upper electrode on the Hf 1-x Tb x O dielectric layer.    
   
   
       2 . The method of  claim 1 , wherein a subscript x of the Hf 1-x Tb x O dielectric layer represents an atomic ratio of terbium (Tb) and has a value ranging from approximately 0.03 to approximately 0.1.  
   
   
       3 . The method of  claim 1 , wherein the Hf 1-x Tb x O dielectric layer is formed with a thickness less than approximately 100 Å.  
   
   
       4 . The method of  claim 3 , wherein the Hf 1-x Tb x O dielectric layer is formed by an atomic layer deposition (ALD) method.  
   
   
       5 . The method of  claim 3 , wherein the Hf 1-x Tb x O dielectric layer is formed by a low pressure chemical vapor deposition (LPCVD) method.  
   
   
       6 . The method of  claim 4 , wherein the Hf 1-x Tb x O dielectric layer is formed by using a source gas of hafnium (Hf) selected from a group consisting of C 16 H 36 HfO 4  and Hf-precursors of Hf-containing organic metal compounds.  
   
   
       7 . The method of  claim 4 , wherein the Hf 1-x Tb x O dielectric layer is formed by using a source gas of Tb selected from a group consisting of Tb(OC 2 H 5 ) 3  and Tb-precursors of Tb-containing organic metal compounds.  
   
   
       8 . The method of  claim 4 , wherein a reaction gas for forming the Hf 1-x Tb x O dielectric layer is selected from a group consisting of O 3  gas, O 2  plasma gas and water vapor.  
   
   
       9 . The method of  claim 6 , wherein the Hf-source gas is supplied with a flow rate ranging from approximately 50 sccm to approximately 500 sccm.  
   
   
       10 . The method of  claim 7 , wherein the Tb-source gas is supplied with a flow rate ranging from approximately 50 sccm to approximately 500 sccm.  
   
   
       11 . The method of  claim 8 , wherein the reaction gas is supplied with a flow rate ranging from approximately 0.1 slm to approximately 1 slm.  
   
   
       12 . The method of  claim 8 , wherein if the O 3  gas is used as the reaction gas, a concentration of the O 3  gas is set to be in a range of approximately 200±20 g/m 3 .  
   
   
       13 . The method of  claim 5 , wherein the Hf 1-x Tb x O dielectric layer is formed by using a source gas of hafnium (Hf) selected from a group consisting of C 16 H 36 HfO 4  and Hf-precursors of Hf-containing organic metal compounds.  
   
   
       14 . The method of  claim 5 , wherein the Hf 1-x Tb x O dielectric layer is formed by using a source gas of Tb selected from a group consisting of Tb(OC 2 H 5 ) 3  and Tb-precursors of Tb-containing organic metal compounds.  
   
   
       15 . The method of  claim 5 , wherein a reaction gas for forming the Hf 1-x Tb x O dielectric layer is selected from a group consisting of O 3  gas, O 2  plasma gas and water vapor.  
   
   
       16 . The method of  claim 13 , wherein the Hf-source gas is supplied with a flow rate ranging from approximately 50 sccm to approximately 500 sccm.  
   
   
       17 . The method of  claim 14 , wherein the Tb-source gas is supplied with a flow rate ranging from approximately 50 sccm to approximately 500 sccm.  
   
   
       18 . The method of  claim 15 , wherein the reaction gas is supplied with a flow rate ranging from approximately 0.1 slm to approximately 1 slm.  
   
   
       19 . The method of  claim 15 , wherein if the O 3  gas is used as the reaction gas, a concentration of the O 3  gas is set to be in a range of approximately 200±20 g/m 3 .  
   
   
       20 . The method of  claim 4 , wherein the ALD method for forming the Hf 1-x Tb x O dielectric layer proceeds by repeatedly performing a cycle for forming a hafnium oxide (HfO 2 ) layer and a cycle for forming a terbium oxide (Tb x O y ) layer, in which subscripts x and y represent atomic ratios of terbium and oxygen, in a ratio less than approximately 9 to approximately 1.  
   
   
       21 . The method of  claim 4 , wherein the ALD method for forming the Hf 1-x Tb x O dielectric layer proceeds by repeatedly performing a cycle of sequentially proving a Hf-source gas, a purge gas, a Tb source gas, a purge gas, a reaction gas, and a purge gas under a condition that the Hf source gas and the Tb source gas are provided in a ratio less than approximately 9 to approximately 1.  
   
   
       22 . The method of  claim 5 , wherein the LPCVD method for forming the Hf 1-x Tb x O dielectric layer proceeds by vaporizing organic metal compounds individually containing Hf and Tb in a respective ratio less than approximately 9 to approximately 1 through the use of a flow quantity controller and providing individually the vaporized organic metal compounds to a reaction chamber for the LPCVD method.  
   
   
       23 . The method of  claim 22 , wherein the reaction chamber for the LPCVD method is maintained with a temperature ranging from approximately 250° C. to approximately 500° C.  
   
   
       24 . The method of  claim 1 , wherein the thermal process is one of a furnace annealing process and a rapid thermal process.  
   
   
       25 . The method of  claim 1 , wherein the thermal process is carried out at a temperature ranging from approximately 500° C. to approximately 900° C. in an atmosphere of N 2  under one of an increasing pressure and a decreasing process.  
   
   
       26 . The method of  claim 1 , wherein the thermal process is carried out at a temperature ranging from approximately 500° C. to approximately 900° C. in an atmosphere of O 2  and N 2  mixed in a ratio less than approximately 1 to 10 under one of an increasing pressure and a decreasing process.  
   
   
       27 . The method of  claim 1 , wherein the lower electrode and the upper electrode are made of polysilicon.  
   
   
       28 . The method of  claim 1 , wherein the lower electrode and the upper electrode are made of a metal selected from a group consisting of TiN, Ru, TaN, W, WSi, WN, RuO 2 , Ir, IrO 2 , and Pt.

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