Quantum structure and forming method of the same

Abstract

A quantum structure and the forming method based on the difference in characteristic of two matters is provided. The forming method includes several steps. At first, providing a first dielectric layer for forming a second dielectric layer thereon. The second dielectric layer has major elements and impurities contained. Treating the second dielectric layer to drive the impurities to form the quantum structure. For example, oxidizing the major elements to drive the impurities in the first dielectric layer to form the quantum structure in said first dielectric layer because the oxidizing capability of the major elements is stronger than that of the impurities.

1 - 18 . (canceled)  
     
     
         19 . A non-volatile random access memory including quantum structure, comprising: 
 a semiconductor substrate including a source and a drain;    a dielectric layer, that is deposited on said semiconductor substrate, said dielectric layer including said quantum structure that are formed from an oxidizing process; and    a control gate formed on said dielectric layer.