Method of cleaning a reaction chamber

Abstract

A method of cleaning a reaction chamber is provided. In the method, a wafer is removed from the reaction chamber, and a nitrogen triflouride (NF 3 ) gas or NF 3 plasma is implanted into the reaction chamber. The NF 3 gas or NF 3 plasma reacts with a phosphorous polymer located in the reaction chamber, and the phosphorus polymer is removed from the reaction chamber.

1 . A method of cleaning a reaction chamber, comprising: 
 removing a wafer from the reaction chamber after completing a plasma ion implantation process;    implanting a nitrogen triflouride (NF 3 ) gas into the reaction chamber; and    removing a phosphorus polymer from the reaction chamber.    
   
   
       2 . The method of  claim 1 , wherein a flow amount of the NF 3  gas is about 100 cc˜1000 cc.  
   
   
       3 . The method of  claim 1 , wherein an internal temperature of the reaction chamber is about 100° C.˜700° C.  
   
   
       4 . The method of  claim 1 , wherein an internal pressure of the reaction chamber is about 10 torr˜20 torr.  
   
   
       5 . The method of  claim 1 , wherein the step of removing the phosphorus polymer from the reaction chamber comprises: 
 vaporizing the phosphorus polymer in the reaction chamber; and    discharging the vaporized phosphorus polymer from the reaction chamber.    
   
   
       6 . The method of  claim 5 , wherein the NF 3  gas reacts with the phosphorus polymer in the reaction chamber to vaporize the phosphorus polymer.  
   
   
       7 . The method of  claim 5 , wherein the vaporized phosphorus polymer is discharged through an exhaust line of the reaction chamber.  
   
   
       8 . A method of cleaning a reaction chamber, comprising: 
 removing a wafer from the reaction chamber after completing a plasma ion implantation process;    implanting a nitrogen triflouride (NF 3 ) gas into the reaction chamber;    applying radio frequency (RF) power to the reaction chamber to generate an NF 3  plasma; and    removing a phosphorus polymer from the reaction chamber using the NF 3  plasma.    
   
   
       9 . The method of  claim 8 , wherein a flow amount of the NF 3  gas is about 100 cc˜1000 cc.  
   
   
       10 . The method of  claim 8 , wherein an internal temperature of the reaction chamber is about 100° C.˜700° C.  
   
   
       11 . The method of  claim 8 , wherein an internal pressure of the reaction chamber is about 10 torr˜20 torr.  
   
   
       12 . The method of  claim 8 , wherein the RF power is about 100 W˜500 W.  
   
   
       13 . The method of  claim 8 , wherein the step of removing the phosphorus polymer from the reaction chamber comprises: 
 vaporizing the phosphorus polymer in the reaction chamber; and    discharging the vaporized phosphorus polymer from the reaction chamber.    
   
   
       14 . The method of  claim 13 , wherein the NF 3  gas reacts with the phosphorus polymer in the reaction chamber to vaporize the phosphorus polymer.  
   
   
       15 . The method of  claim 13 , wherein the vaporized phosphorus polymer is discharged through an exhaust line of the reaction chamber.