Plasma processing method

Abstract

A plasma processing method utilizing an apparatus comprising a processing chamber to which is connected an exhaust pump for decompressing the chamber, a gas feeding apparatus for feeding gas into the processing chamber, an object to be processed, a wafer electrode for mounting the object, an antenna electrode for generating plasma and opposed to the plate electrode, a plasma generating high frequency power supply connected to the antenna electrode, a first high frequency power supply connected to the wafer electrode, and a second high frequency power supply connected to the antenna electrode. The method includes setting the high frequencies applied from the first high frequency power supply and the second high frequency power supply to be equal and controlling the phase of the respective high frequencies.

1 - 10 . (canceled)  
   
   
       11 . A plasma processing method utilizing a plasma processing apparatus comprising a processing chamber to which is connected an evacuator for decompressing the inner space of the processing chamber; a gas feeding apparatus for feeding gas into the processing chamber; a wafer electrode on which is mounted an object to be processed; an antenna electrode for generating plasma which is disposed so as to oppose to the wafer electrode; a plasma-generating high frequency power supply connected to the antenna electrode; a first high frequency power supply connected to the plate electrode; and a second high frequency power supply connected to the antenna electrode; wherein 
 the plasma processing method comprises setting the frequency of the high frequency applied from the first high frequency power supply and that applied from the second high frequency power supply to be equal, and controlling the phase difference of the two high frequencies.    
   
   
       12 . A plasma processing method according to  claim 11 , wherein the phase difference of the high frequencies is controlled within the range of 0° to 360°.  
   
   
       13 . A plasma processing method according to  claim 11 , wherein the phase difference of the high frequencies is switched by steps while the object is being processed.  
   
   
       14 . A plasma processing method according to  claim 11 , wherein the phase difference of the high frequencies is switched by steps within the range of 0° to 360° while the object is being processed.  
   
   
       15 . A plasma processing method according to  claim 11 , wherein the phase difference of the high frequencies is varied with time.  
   
   
       16 . A plasma processing method according to  claim 11 , wherein the phase difference of high frequencies is varied with time within the range of 0° to 360° while the object is being processed.