Plasma processing apparatus

Abstract

A plasma processing apparatus capable of extending a period of maintenance and continuing stable processing is provided. The apparatus comprises a vacuum reactor 1 having a processing gas introduction device and a evacuating device, a shield electrode 14 formed on the outer circumferential wall of the vacuum reactor, and a specimen placing device 101 having an antenna electrode 51 for radiating high frequency power into the vacuum reactor, in which first high frequency power is supplied to the antenna electrode, and high frequency power at a frequency lower than that of the first high frequency power is supplied to the antenna electrode 51 and the shield electrode 15.

1 . A plasma processing apparatus comprising: 
 a vacuum reactor having processing gas introduction means and evacuation means;    a shield electrode formed on an outer circumferential wall of the vacuum reactor; and    a specimen placing device having an antenna electrode for radiating high frequency power into the vacuum reactor;    wherein first high frequency power is supplied to the antenna electrode, and high frequency power at a frequency lower than that of the first high frequency power is supplied to the antenna electrode and the shield electrode.    
   
   
       2 . A plasma processing apparatus comprising: 
 a vacuum reactor having processing gas introduction means and evacuation means;    a shield electrode formed on an outer circumferential wall of the vacuum reactor;    a specimen placing device having an antenna electrode for radiating high frequency power into the vacuum reactor; and    an exciting coil formed on an outer circumference of an outer circumferential wall of the vacuum reactor;    wherein a first high frequency power is supplied to the antenna electrode, and high frequency power at a frequency lower than that of the first high frequency power is supplied to the antenna electrode and the exciting coil,    an impedance element is connected to the shield electrode, and a shield voltage is applied to the shield electrode by way of the exciting coil.    
   
   
       3 . A plasma processing apparatus according to  claim 2 , wherein 
 a slit is formed at a portion, of the shield electrode, facing the exciting coil in a direction substantially perpendicular to the exciting coil.    
   
   
       4 . A plasma processing apparatus according to  claim 2 , wherein 
 a slit is formed at a portion, of the shield electrode, facing the exciting coil in a direction substantially perpendicular to the exciting coil, and an opening or a dent is formed at a central portion of the shield electrode on an upper surface of the vacuum reactor.    
   
   
       5 . A plasma processing apparatus according to  claim 1 , wherein 
 the antenna electrode and the shield electrode are connected by way of a power divider and a phase shifter.    
   
   
       6 . A plasma processing apparatus according to  claim 2 , wherein 
 the antenna electrode and the exciting coil are connected by way of a power divider and a phase shifter.    
   
   
       7 . A plasma processing apparatus according to  claim 1 , wherein 
 a disk-shaped cavity having a diameter corresponding to nodes of a standing wave formed on an upper surface of the specimen placed during plasma processing is formed at a central part of the antenna electrode.    
   
   
       8 . A plasma processing apparatus according to  claim 2 , wherein 
 a disk-shaped cavity having a diameter corresponding to nodes of a standing wave formed on an upper surface of the specimen placed during plasma processing is formed at a central part of the antenna electrode.    
   
   
       9 . A plasma processing apparatus according to  claim 1 , wherein 
 a disk-shaped dielectric layer having a diameter corresponding to nodes of a standing wave formed on an upper surface of the specimen placed during plasma processing is formed at a central part of the antenna electrode.    
   
   
       10 . A plasma processing apparatus according to  claim 2 , wherein 
 a disk-shaped dielectric layer having a diameter corresponding to nodes of a standing wave formed on an upper surface of the specimen placed during plasma processing is formed at a central part of the antenna electrode.    
   
   
       11 . A plasma processing apparatus comprising: 
 a vacuum reactor made of dielectric having processing gas introduction means and evacuation means;    a shield electrode formed on an outer circumferential wall of the vacuum reactor;    a specimen placing device having an antenna electrode for irradiating high frequency power into the vacuum reactor; and    a ZrO 2  flame-sprayed film formed on an inner wall surface of the vacuum reactor made of the dielectric;    wherein first high frequency power is supplied to the antenna electrode, and high frequency power at a frequency lower than that of the first high frequency power is supplied to the antenna electrode and the shield electrode.    
   
   
       12 . A plasma processing apparatus according to  claim 9  wherein a Y 2 O 3  flame-sprayed film is provided on an inner wall surface of the vacuum reactor made of the dielectric.