Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor

Abstract

The invention provides methods for CMP polishing, residue removal and post-CMP polishing of a metal containing substrate. The CMP polishing methods for contacting a metal-containing substrate with a composition comprising an oxider, a salicylic acid compound, water, and an abrasive. The post-CMP polishing and residue removal methods require contacting a metal-containing substrate with a composition comprising an oxidizer, a salicylic acid compound, and water.

1 - 19 . (canceled)  
     
     
         20 . A method of cleaning a metal-containing substrate that had previously undergone a chemical mechanical polishing process comprising the steps of: 
 contacting the chemically mechanically polished metal-containing substrate with a composition comprising: 
 an oxidizer;  
 a salicylic acid compound having the formula:  
                     
   where R 1  and R 2  are independently hydrogen, an organic salt/counterion, an inorganic salt/counterion, a C 1 -C 20  linear or branched, saturated or unsaturated, optionally singly or multiply substituted alkyl moiety, a C 5 -C 20  optionally singly or multiply substituted aryl or heteroaryl moiety, or a combination thereof, and where R 3  is a hydrogen, a C 1 -C 20  linear or branched, saturated or unsaturated, optionally singly or multiply substituted alkyl moiety, a C 5 -C 20  optionally singly or multiply substituted aryl or heteroaryl moiety, or a combination thereof, and wherein optionally substituted moieties comprise hydroxyls, nitro groups, sulfates, phosphates, amines, amides, carboxylic acids, carboxylate salts, carboxylate esters, halides, alkyl or aryl ethers, C 1 -C 6  linear or branched, saturated or unsaturated alkyl groups, C 5 -C 12  aryl groups, or the like, or a combination or reaction product thereof; and 
 water,  
   wherein the contacting occurs at a temperature and for a time sufficient to clean the metal-containing substrate.    
     
     
         21 . The method of  claim 20 , wherein the oxidizer comprises hydroxylamine or a hydroxylamine derivative having the formula:  
       
         
           
           
               
               
           
         
       
       wherein R 1  is hydrogen or a linear, branched, or cyclic hydrocarbon containing from 1 to 7 carbon atoms, and wherein X and Y are, independently, hydrogen or a linear, branched, or cyclic hydrocarbon containing from 1 to 7 carbon atoms, or wherein X and Y are linked together form a nitrogen-containing heterocyclic 4- to 7-membered ring.  
     
     
         22 - 23 . (canceled)  
     
     
         24 . The method of  claim 20 , wherein the salicylic acid compound comprises salicylic acid.  
     
     
         25 . The method of  claim 20 , wherein the oxidizer is hydrogen peroxide.  
     
     
         26 . The method of  claim 20 , wherein the oxidizer is periodic acid.  
     
     
         27 . The method of  claim 20 , wherein the oxidizer comprises persulfide.  
     
     
         28 . A method of post-etch residue removal for a metal-containing substrate comprising the steps of: 
 contacting a metal-containing substrate that has previously been etched with a composition comprising: 
 an oxidizer;  
 a salicylic acid compound having the formula:  
                     
   where R 1  and R 2  are independently hydrogen, an organic salt/counterion, an inorganic salt/counterion, a C 1 -C 20  linear or branched, saturated or unsaturated, optionally singly or multiply substituted alkyl moiety, a C 5 -C 20  optionally singly or multiply substituted aryl or heteroaryl moiety, or a combination thereof, and where R 3  is a hydrogen, a C 1 -C 20  linear or branched, saturated or unsaturated, optionally singly or multiply substituted alkyl moiety, a C 5 -C 20  optionally singly or multiply substituted aryl or heteroaryl moiety, or a combination thereof, and wherein optionally substituted moieties comprise hydroxyls, nitro groups, sulfates, phosphates, amines, amides, carboxylic acids, carboxylate salts, carboxylate esters, halides, alkyl or aryl ethers, C 1 -C 6  linear or branched, saturated or unsaturated alkyl groups, C 5 -C 12  aryl groups, or the like, or a combination or reaction product thereof; and 
 water,  
   wherein the contacting occurs at a temperature and for a time sufficient to remove post-etch residue from the metal-containing substrate.    
     
     
         29 . A method for cleaning and/or removing residue from a metal-containing substrate that has previously been chemically-mechanically polished, etched, or both, the method comprising: 
 contacting the previously treated metal-containing substrate with a composition that comprises 
 from about 0.00001M to about 0.5M of a salicylic acid compound having the formula:  
                     
   where R 1  and R 2  are each independently hydrogen; an organic salt/counterion; an inorganic salt/counterion; a C 1 -C 20  linear or branched, saturated or unsaturated, optionally singly or multiply substituted alkyl moiety; a C 5 -C 20  optionally singly or multiply substituted aryl or heteroaryl moiety; or a combination thereof, and where R 3  is hydrogen; a C 1 -C 20  linear or branched, saturated or unsaturated, optionally singly or multiply substituted alkyl moiety; a C 5 -C 20  optionally singly or multiply substituted aryl or heteroaryl moiety; or a combination thereof, wherein optionally substituted moieties comprise hydroxyls, nitro groups, sulfates, phosphates, amines, amides, carboxylic acids, carboxylate salts, carboxylate esters, halides, alkyl or aryl ethers, C 1 -C 6  linear or branched, saturated or unsaturated alkyl groups, C 5 -C 12  aryl groups, or the like, or a combination or reaction product thereof, and wherein the salicylic acid compound is present in an amount sufficient to substantially inhibit corrosion; and 
 water,  
   wherein the contacting occurs at a temperature and for a time sufficient to clean and/or remove residue from the previously treated metal-containing substrate.    
     
     
         30 . The method of  claim 29 , wherein the metal-containing substrate comprises a copper-containing substrate.  
     
     
         31 . The method of  claim 30 , wherein the copper-containing substrate also comprises a tantalum-containing layer.  
     
     
         32 . The method of  claim 29 , wherein the composition fuirther comprises an organic acid other than the salicylic acid compound.  
     
     
         33 . The method of  claim 29 , wherein the substrate is a semiconductor base material.  
     
     
         34 . The method of  claim 29 , wherein the salicylic acid compound comprises acetylsalicylic acid.  
     
     
         35 . The method of  claim 20 , wherein the oxidizer comprises persulfates, organic and inorganic peroxides, oxidized halides, periodic acid, permanganates, chromates, cerium compounds, ferricyanides, or combinations thereof.  
     
     
         36 . The method of  claim 29 , wherein the oxidizer comprises a hydroxylamine or a hydroxylamine derivative having the formula:  
       
         
           
           
               
               
           
         
       
       wherein R 1  is hydrogen or a linear, branched, or cyclic hydrocarbon containing from 1 to 7 carbon atoms, and wherein X and Y are, independently, hydrogen or a linear, branched, or cyclic hydrocarbon containing from 1 to 7 carbon atoms, or wherein X and Y are linked together form a nitrogen-containing heterocyclic 4- to 7-membered ring.  
     
     
         37 . The method of  claim 29 , wherein the metal-containing substrate comprises a ferroelectric material, a magnetic material, or both.  
     
     
         38 . The method of  claim 20 , wherein the amount of oxidizer present is from about 0.01% to about 30% by weight.  
     
     
         39 . The method of  claim 20 , wherein the salicylic acid compound is present in an amount from about 0.01% to about 5% by weight.  
     
     
         40 . The method of  claim 36 , wherein the oxidizer comprises hydroxylamine, N-methyl-hydroxylamine, N,N-dimethyl-hydroxylamine, N-ethyl-hydroxylamine, N,N-diethyl-hydroxylamine, hydroxylamine nitrate, hydroxylamine sulfate, hydroxylamine phosphate, or a combination thereof.  
     
     
         41 . The method of  claim 20 , wherein the composition further comprises at least one of the following: a film-forming agent other than the salicylic acid compound; a surfactant; a Theological control agent; a polymeric stabilizer; a surface active dispersing agent; or a combination thereof.  
     
     
         42 . The method of  claim 41 , wherein the total amount of surfactant and rheological control agent present is collectively from about 0.05% to about 4% by weight.  
     
     
         43 . The method of  claim 20 , wherein the composition is substantially free of oxidizers other than hydroxylamine or a derivative thereof, and wherein the composition is substantially free of film-forming agents other than the salicylic acid compound.  
     
     
         44 . The method of  claim 29 , wherein the composition is substantially free of corrosion inhibiting agents other than the salicylic acid compound.