High-heat conductivity si-containing material and its manufacturing method

Abstract

A highly heat-conductive Si-containing material containing a Si phase whose lattice constant at room temperature is controlled at a level of more than 0.54302 nm but 0.54311 nm or less. Firing is conducted using a kiln material containing no B compound. With this highly heat-conductive Si-containing material and the process for production thereof, a reduction in heat conductivity can be prevented and a high heat conductivity can be exhibited stably.

1 . A highly heat-conductive Si-containing material characterized by being either of a silicon-silicon carbide type material and a silicon-silicon carbide type composite material and containing a Si phase whose lattice constant at room temperature is controlled at a level of more than 0.54302 nm but 0.54311 nm or less.  
     
     
         2 . A highly heat-conductive Si-containing material according to  claim 1 , wherein a boron content in the Si phase is 0.02% by weight or less.  
     
     
         3 . (Canceled)  
     
     
         4 . A process for producing a highly heat-conductive Si-containing material containing a Si phase whose lattice constant at room temperature is controlled at a level of more than 0.54302 nm but 0.54311 nm or less, characterized by firing a Si-containing material using a kiln material containing no B compound.  
     
     
         5 . A process for producing a highly heat-conductive Si-containing material according to  claim 4 , wherein the kiln material is alumina or an oxide-bonded silicon carbide material.  
     
     
         6 . A process for producing a highly heat-conductive Si-containing material according to  claim 4 , wherein the Si-containing material is a silicon-silicon carbide type material, a silicon-silicon carbide type composite material, a material composed mainly of silicon carbide, or a material composed mainly of silicon.  
     
     
         7 . A process for producing a highly heat-conductive Si-containing material according to  claim 4 , wherein a boron content in the Si phase of the highly heat-conductive Si-containing material is 0.02% by weight or less.  
     
     
         8 . A highly heat-conductive Si-containing material according to  claim 2 , which has been produced by a process for producing a highly heat-conductive Si-containing material, set forth in  claim 4 .  
     
     
         9 . A highly heat-conductive Si-containing material according to  claim 2 , which has been produced by a process for producing a highly heat-conductive Si-containing material, set forth in  claim 4.