Utilizing atomic layer deposition for programmable device

Abstract

In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact, the contact formed on a substrate. An electrode is conformally deposited on a wall of the dielectric, utilizing atomic layer deposition (ALD). A programmable material is formed on the electrode and a conductor is formed to the programmable material. In an aspect, a barrier is conformally deposited utilizing ALD, between the electrode and the programmable material.

1 - 10 . (canceled)  
   
   
       11 . A system comprising: 
 a microprocessor;    an input/output (I/O) port; and    a memory including a contact on a substrate and a dielectric on the contact, the dielectric having an opening exposing the contact, an electrode conformally deposited on a wall of the dielectric by atomic layer deposition (ALD), a programmable material on the electrode, and a conductor formed to the programmable material; and    wherein the microprocessor, the I/O port, and the memory are connected by a data bus, an address bus and a control bus.    
   
   
       12 . The system of  claim 11 , further comprising: 
 a barrier, deposited by ALD, between the electrode and the programmable material, the barrier comprising at least one of titanium silicide and titanium nitride.    
   
   
       13 . The system of  claim 11 , wherein the electrode has a film thickness from 10 angstroms to 1000 angstroms.  
   
   
       14 . The system of  claim 11 , wherein the electrode has a resistivity from 0.001 ohm-cm to 0.05 om-cm, and the electrode comprises at least one of tungsten (W), tungsten nitride (WN), titanium nitride (TiN), titanium silicon nitride (TiSiN), and tantalum nitride (TaN).  
   
   
       15 . The system of  claim 11 , wherein the programmable material comprises a chalcogenide memory element.