Method of forming an inductor with continuous metal deposition

Abstract

A method is described to fabricate RF inductor devices on a silicon substrate. Low-k or other dielectric material is deposited and patterned to form inductor lower plate trenches. Trenches are lined with barrier film such as TaN, filled with copper, and excess metal planarized using chemical mechanical polishing (CMP). Second layer of a dielectric material is deposited and patterned to form via-hole/trenches. Via-hole/trench patterns are filled with barrier material, and the dielectric film in between the via-hole/trenches is etched to form a second set of trenches. These trenches are filled with copper and planarized. A third layer of a dielectric film is deposited and patterned to form via-hole/trenches. Via-hole/trenches are then filled with barrier material, and the dielectric film between via-hole/trench patterns etched to form a third set of trenches. These trenches are filled with copper metal and excess metal removed by CMP to form said RF inductor.

1 - 17 . (canceled)  
   
   
       18 . An inductor device comprising, 
 a stack of dielectric layers on a semiconductor substrate, having active and passive components;    metal inductor embedded in said stack of dielectric layers; and    metal inductor encased in barrier material.    
   
   
       19 . An inductor device according to  claim 18 , wherein said dielectric stack consists of one or more layers of dielectric films.  
   
   
       20 . An inductor device according to  claim 18 , wherein said dielectric layer comprise inorganic, organic, and/or hybrid materials.  
   
   
       21 . An inductor device according to  claim 20 , wherein said inorganic dielectric layer comprises silicon dioxide, nitridized silicon dioxide, silicon nitride, oxygen-doped silicon nitride, and/or silicon oxy-fluoride.  
   
   
       22 . An inductor device according to  claim 20 , wherein said organic dielectric layer comprises poly-tetrafluoro ethylene, polyimide, poly arylenes, cyclotenes, and teflons, and/or polyimide nanofoams.  
   
   
       23 . An inductor device according to  claim 20 , wherein said hybrid dielectric layer comprises spin-on glass, nanoporous silica, organo-silicate glass, methyl silsesquioxane, hydrogen silsesquioxane, and/or silica aerogels.  
   
   
       24 . An inductor device according to  claim 20 , wherein said inductor-metal comprises aluminum, copper, aluminum-copper alloy, gold, and/or silver.  
   
   
       25 . An inductor device according to  claim 20 , wherein said barrier material comprises Ta, TaN, and/or TiN.