Semiconductor device manufacturing method and semiconductor device manufactured thereby

Abstract

A method of manufacturing a semiconductor device involves mounting a semiconductor chip, formed on top with a main electrode and a subelectrode smaller in area than the main electrode, on a die pad of an external lead frame through a first bonding material, mounting an inner lead frame in which plural inner leads for connecting the main electrode and the subelectrode on the chip to corresponding connecting pads of the external lead frame are joined together by a tie bar on the chip and the external lead frame through a second bonding material, heating the first and second bonding materials simultaneously for electrically connecting and fixing the chip to the die pad and the inner leads to the electrodes on the chip and the connecting pads of the external lead frame, and cutting the tie bar to separate the inner lead frame into the plural inner leads.

1 - 20 . (canceled)  
     
     
         21 . A semiconductor device comprising: 
 a first transistor chip having a first main electrode and a first gate electrode for a first transistor, the first transistor being formed in the first transistor chip, on an upper surface of the first transistor chip, a second main electrode on a bottom surface of the first transistor chip, and a Schottky diode formed in the first transistor chip connected in parallel to the first transistor; and    a first inner lead made of a sheet metal, a first end of the first inner lead being connected to the first main electrode so as cover at least a part of the Schottky diode, a second end of the first inner lead being connected to a first external lead.    
     
     
         22 . The semiconductor device according to  claim 21 , wherein the first end of the first inner lead covers the diode region almost entirely.  
     
     
         23 . The semiconductor device according to  claim 21 , wherein the first transistor chip is an N-channel MOSFET.  
     
     
         24 . The semiconductor device according to  claim 21 , wherein the sheet metal is a plate made of Cu or Cu alloy.  
     
     
         25 . The semiconductor device according to  claim 21 , wherein the first end of the first inner lead is directly connected to the first main electrode.  
     
     
         26 . The semiconductor device according to  claim 21 , wherein the first end of the first inner lead is bonded to the first main electrode.  
     
     
         27 . The semiconductor device according to  claim 21 , further comprising: 
 a second transistor chip having a third main electrode and a second gate electrode for a second transistor, on an upper surface of the second transistor chip, a fourth main electrode on a bottom surface of the second transistor chip, the third main electrode being electrically connected to the second main electrode of the first transistor chip; and    a second inner lead made of the sheet metal, a first end of the second inner lead being connected to the third main electrode, a second end of the second inner lead being connected to a second external lead.    
     
     
         28 . The semiconductor device according to  claim 27 , wherein an anode and a cathode of the Schottky diode are connected to the first main electrode and the second main electrode, respectively.  
     
     
         29 . A system including the semiconductor device according to  claim 27 , comprising an inductor having a first lead electrically connected to the second main electrode of the first transistor chip and the third main electrode of the second transistor chip.  
     
     
         30 . The system according to  claim 29 , further comprising a capacitor having a first lead electrically connected to a second lead of the inductor.  
     
     
         31 . A semiconductor device comprising: 
 a first semiconductor chip having a first main electrode and a first gate electrode on an upper surface of the first semiconductor chip, a second main electrode on a bottom surface of the first semiconductor chip, a transistor region including a first transistor, which is coupled to the first main electrode, the first gate electrode and the second main electrode, and a diode region in which a Schottky diode is included to be connected in parallel to the first transistor; and    a first inner lead made of a sheet metal, a first end of the first inner lead being connected to the first main electrode above at least a part of the diode region, a second end of the first inner lead being connected to a first external lead.    
     
     
         32 . The semiconductor device according to  claim 31 , wherein the first end of the first inner lead covers the diode region almost entirely.  
     
     
         33 . The semiconductor device according to  claim 31 , wherein the first semiconductor chip is an N-channel MOSFET.  
     
     
         34 . The semiconductor device according to  claim 31 , wherein the sheet metal is a plate made of Cu or Cu alloy.  
     
     
         35 . The semiconductor device according to  claim 31 , wherein the first end of the first inner lead is directly connected to the first main electrode.  
     
     
         36 . The semiconductor device according to  claim 31 , wherein the first end of the first inner lead is bonded to the first main electrode.  
     
     
         37 . The semiconductor device according to  claim 31 , further comprising: 
 a second semiconductor chip having a third main electrode and a second gate electrode on an upper surface of the second semiconductor chip, a fourth main electrode on a bottom surface of the second semiconductor chip, the third main electrode being connected to the second main electrode of the first semiconductor chip; and    a second inner lead made of the sheet metal, a first end of the second inner lead being connected to the third main electrode, a second end of the second inner lead being connected to a second external lead.    
     
     
         38 . The semiconductor device according to  claim 37 , wherein an anode and a cathode of the Schottky diode are connected to the first main electrode and the second main electrode, respectively.  
     
     
         39 . A system including the semiconductor device according to  claim 37  comprising, an inductor having a first lead electrically connected to the second main electrode of the first semiconductor chip and the third main electrode of the second semiconductor chip.  
     
     
         40 . The system according to  claim 39 , further comprising a capacitor having a first lead electrically connected to a second lead of the inductor.