Semiconductor device with elevated source/drain structure and its manufacture method

Abstract

A gate electrode is formed over a partial surface area of a semiconductor substrate, with a gate insulating film being interposed therebetween. A first semiconductor film is formed over the semiconductor substrate on both sides of the gate electrode, the first semiconductor film being spaced apart from the gate electrode. An impurity diffusion region is formed in each of the first semiconductor films. An extension region is formed in the surface layer of the semiconductor substrate on both sides of the gate electrode. The extension region is doped with impurities of the same conductivity type as the impurity diffusion region and being connected to a corresponding one of the impurity diffusion regions. Sidewall spacers are formed on the sidewalls of the gate electrode, the sidewall spacers extending beyond edges of the first semiconductor films on the gate electrode side and covering partial surfaces of the first semiconductor films.

1 . A semiconductor device comprising: 
 a gate electrode formed over a partial surface area of a semiconductor substrate, with a gate insulating film being interposed therebetween;    first semiconductor films made of semiconductor material and formed over surfaces of the semiconductor substrate on both sides of the gate electrode, each of the first semiconductor films being spaced apart from the gate electrode by a distance;    impurity diffusion regions formed in each of the first semiconductor films;    extension regions formed in surface layers of the semiconductor substrate on both sides of the gate electrode, each of the extension regions being doped with impurities of a same conductivity type as the impurity diffusion region and being connected to a corresponding one of the impurity diffusion regions; and    sidewall spacers made of insulating material and formed on sidewalls of the gate electrode, the sidewall spacers extending beyond borders of the first semiconductor films on the gate electrode side and covering partial surfaces of the first semiconductor films.    
   
   
       2 . A semiconductor device according to  claim 1 , further comprising: 
 a first metal silicide film formed on surfaces of the first semiconductor films not covered with the side wall spacers; and    a second metal silicide film formed on the gate electrode.    
   
   
       3 - 9 . (canceled)