Thermal processing apparatus and a thermal processing method

Abstract

Substrates having surfaces in a highly clean condition are subjected to a thermal process in a heating furnace. In a thermal processing apparatus for processing substrates by a predetermined thermal process that heats the substrates by a heating means, the substrates are held in a vertical position at horizontal intervals in a reaction vessel. Cleaning liquids are supplied into the reaction vessel to clean the substrates, and then the cleaning liquids are drained away through a drain port, and then a process gas is supplied into the reaction vessel to process the substrates by a thermal process. The substrates having the cleaned clean surfaces are subjected to the thermal process without being exposed to the ambient atmosphere and can be satisfactorily processed by the thermal process.

1 . A thermal processing apparatus for processing substrates by a predetermined thermal process that heats the substrates by a heating means, said thermal processing apparatus comprising: 
 a reaction vessel provided with a drain port;    a cleaning liquid supply means for supplying cleaning liquids into the reaction vessel to clean the substrates after the substrates have been loaded into the reaction vessel; and    a process gas supply means for supplying a process gas into the reaction vessel to process the substrates by the thermal process after the cleaning liquids have been drained away from the reaction vessel.    
   
   
       2 . A thermal processing apparatus for processing substrates by a predetermined thermal process that heats the substrates by an external heating means, said thermal processing apparatus comprising: 
 a reaction vessel provided with a drain port;    a lid for closing an inlet opening of the reaction vessel;    a substrate holding device mounted on the lid to hold the substrates;    a carrying means for carrying the substrate holding device into and carrying the same out from the processing vessel;    a cleaning liquid supply means for supplying cleaning liquids into the reaction vessel to clean the substrates after the substrate holding device holding the substrates has been loaded into the reaction vessel; and    a process gas supply means for supplying a process gas into the reaction vessel to process the substrates by the thermal process after the cleaning liquids have been drained away through the drain port.    
   
   
       3 . The thermal processing apparatus according to  claim 2 , wherein the substrate holding device holds a plurality of substrates in a vertical position at horizontal intervals.  
   
   
       4 . The thermal processing apparatus according to claim  2 , wherein the cleaning liquid supply means is connected to the lid.  
   
   
       5 . The thermal processing apparatus according to  claim 2 , wherein the drain port is formed in the lid.  
   
   
       6 . The thermal processing apparatus according to  claim 1  or  2 , wherein the cleaning liquid supply means is used for filling up the reaction vessel with the cleaning liquid, and the drain port is closed while the cleaning liquid is supplied into the reaction vessel.  
   
   
       7 . A thermal processing method comprising the steps of: 
 carrying substrates into a reaction vessel;    cleaning the substrates by supplying cleaning liquids into the reaction vessel;    draining away the cleaning liquids from the reaction vessel;    processing the substrates by a thermal process by supplying process gases into the reaction vessel and heating the interior of the reaction vessel after the cleaning liquids have been drained away.    
   
   
       8 . A thermal processing method that processes substrates by a predetermined thermal process in a reaction vessel by heating the substrates with an external heating means, said thermal processing method comprising the steps of: 
 loading a substrate holding device with the substrates;    loading the substrate holding device into the reaction vessel and hermetically closing an inlet opening of the reaction vessel by a lid;    cleaning the substrate by supplying cleaning liquids into the reaction vessel;    draining away the cleaning liquids from the reaction vessel; and    processing the substrates by the thermal process by supplying a process gas into the reaction vessel and heating the interior of the reaction vessel.    
   
   
       9 . The thermal processing method according to  claim 8 , wherein the step of loading the substrate holding device with the substrates loads the substrates onto the substrate holding device such that the substrates are held in a vertical position at horizontal intervals.  
   
   
       10 . The thermal processing method according to  claim 8 , wherein the cleaning liquids are supplied through a discharge port formed in the lid into the reaction vessel.  
   
   
       11 . The thermal processing method according to  claim 8 , wherein the cleaning liquids are drained away through a drain port formed in the lid.  
   
   
       12 . The thermal processing method according to  claim 7  or  8 , wherein the step of supplying the cleaning liquids into the reaction vessel fills up the reaction vessel with the cleaning liquid.