US2005118932A1PendingUtilityA1
Adjustable gap chemical mechanical polishing method and apparatus
Priority: Jul 3, 2003Filed: Jul 6, 2004Published: Jun 2, 2005
Est. expiryJul 3, 2023(expired)· nominal 20-yr term from priority
B24B 49/16B24B 37/30
39
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Claims
Abstract
A polishing apparatus for polishing a surface of wafer is provided. The apparatus includes a carrier to hold the workpiece. An array of fluid nozzles are placed across from the surface of the wafer to provide a gap between the nozzles and the surface of the workpiece. A polishing pad positioned within the gap and configured to polish the surface of the workpiece when a fluid is applied from the plurality of nozzles to push the polishing pad to the surface.
Claims
exact text as granted — not AI-modified1 . A polishing apparatus for polishing a surface of a workpiece comprising:
a carrier surface configured to hold the workpiece; a plurality of fluid nozzles placed across from the surface to provide a gap between the nozzles and the surface of the workpiece; and a polishing pad positioned within the gap and configured to polish the surface of the workpiece when a fluid is applied from the plurality of nozzles to push the polishing pad to the surface.
2 . The polishing apparatus of claim 1 , wherein an isolation region separates fluid nozzles from one another.
3 . The polishing apparatus of claim 2 , wherein the isolation region drain the fluid after the step of applying the fluid to the polishing pad.
4 . The polishing apparatus of claim 1 , wherein the fluid nozzles are arranged into a plurality of zones.
5 . The polishing apparatus of claim 1 , wherein isolation regions separate zones from one another.
6 . The polishing apparatus o f claim 4 , wherein the plurality of zones are circular and disposed concentrically.
7 . The polishing apparatus of claim 4 further comprising at least one regulator associated with each zone and configured to modify the fluid flow from the nozzles to create a desired fluid flow rate profile.
8 . The polishing apparatus of claim 1 wherein the fluid nozzles are configured to be moved close to or away from the polishing pad.
9 . The polishing apparatus of claim 1 , wherein the polishing pad is configured to be moved with respect to the fluid nozzles.
10 . The polishing apparatus of claim 1 , wherein the polishing pad is configured to be moved bilinearly.
11 . The polishing apparatus of claim 1 , wherein the fluid nozzles are placed above the surface of the workpiece.
12 . The polishing apparatus of claim 1 , wherein the polishing pad is a fixed abrasive pad.
13 . The polishing apparatus of claim 1 , wherein the polishing pad is a polymeric pad.
14 . The polishing apparatus of claim 1 , wherein the surface of the wafer comprises copper.
15 . The polishing apparatus of claim 1 , wherein the fluid is air.
16 . A method of polishing a surface of a workpiece surface using a polishing pad, the method comprising the steps of:
placing the polishing pad within a gap defined between the surface of the workpiece and an array of nozzles; emitting a fluid from the array of nozzles to push the polishing pad onto the surface of the workpiece; and polishing the surface with the polishing pad while keeping the gap constant.
17 . The method of claim 16 further comprising the step of removing the fluid through the isolation space between the array of nozzles.
18 . The method of claim 16 , wherein the step of polishing comprises establishing a relative motion between the polishing pad and the surface.
19 . The method of claim 16 further comprising the step of reducing the gap to increase the material removal rate from the surface.
20 . The method of claim 19 further comprising the step of continuing polishing the surface with the polishing pad after the step of reducing the gap.
21 . The method of claim 19 , wherein the step of reducing the gap is performed by moving the array of nozzles close to the surface.
22 . The method of claim 19 , wherein the step of reducing the gap is performed by moving the surface close to the array of nozzles.
23 . The method of claim 16 further comprising the step of increasing the gap to decrease the material removal rate from the surface.
24 . The method of claim 23 further comprising the step of continuing polishing the surface with the polishing pad after the step of increasing the gap.
25 . The method of claim 23 , wherein the step of increasing the gap is performed by moving the array of nozzles away from the surface.
26 . The method of claim 23 , wherein the step of increasing the gap is performed by moving the surface away from the array of nozzles.
27 . The method of claim 18 , wherein the array of nozzles includes a plurality of zones and the step of emitting fluid comprises emitting fluid with different flow rates from each zone.
28 . The method of claim 27 further comprising the step of removing the fluid through the isolation space between the zones.
29 . The method of claim 16 further comprising delivering a polishing slurry between the surface of the workpiece and the polishing pad.
30 . The method of claim 18 , wherein the step of establishing a relative motion includes moving the polishing pad bi-linearly over the array of nozzles while rotating the surface of the workpiece on the polishing pad.
31 . The method of claim 16 further comprising the step of increasing the flow rate of the fluid to increase material removal rate from the surface.
32 . The method of claim 16 further comprising the step of decreasing the flow rate of the fluid to decrease the material removal rate from the surface.
33 . The method of claim 27 , wherein the step of emitting fluid with different flow rates from each zone comprises emitting fluid with a flow rate from a zone and emitting fluid with another flow rate from another zone.Join the waitlist — get patent alerts
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