Post-CMP treating liquid and method for manufacturing semiconductor device

Abstract

There is disclosed a post-CMP treating liquid comprising water, and resin particles dispersed in the water and having a functional group at a surface thereof, or comprising water, resin particles dispersed in the water, and an additive having a functional group and incorporated in the water. The post-CMP treating liquid exhibits a polishing rate both of an insulating film and a conductive film of 10 nm/min or less.

1 . A post-CMP treating liquid comprising: 
 water; and    resin particles dispersed in said water and having a functional group at a surface thereof,    said treating liquid exhibiting a polishing rate each of an SiO 2  film, Cu film and Ta film of 10 nm/min or less.    
   
   
       2 . The post-CMP treating liquid according to  claim 1 , wherein said resin particles comprises at least one selected from the group consisting of polymethylmethacrylate, polystyrene, polyethylene, polyethylene glycol, polyvinyl acetate, polybutadiene, polyisobutylene, polypropylene and polyoxymethylene.  
   
   
       3 . The post-CMP treating liquid according to  claim 1 , wherein said functional group comprises at least one selected from the group consisting of a carboxyl group, an amino group and a sulfonyl group.  
   
   
       4 . The post-CMP treating liquid according to  claim 1 , wherein the primary particles diameter of said resin particles is in the range of 10 nm to 5000 nm.  
   
   
       5 . The post-CMP treating liquid according to  claim 1 , wherein a concentration of said resin particles is in the range of 0.01 wt % to 20 wt %.  
   
   
       6 . The post-CMP treating liquid according to  claim 1 , further comprising at least one of a chelate complex-forming agent and a surfactant.  
   
   
       7 . A post-CMP treating liquid comprising: 
 water;    resin particles dispersed in said water; and    an additive having a functional group and incorporated in said water, said treating liquid exhibiting a polishing rate each of an SiO 2  film, Cu film and Ta film of 10 nm/min or less.    
   
   
       8 . The post-CMP treating liquid according to  claim 7 , wherein said resin particles comprises at least one selected from the group consisting of polymethylmethacrylate, polystyrene, polyethylene, polyethylene glycol, polyvinyl acetate, polybutadiene, polyisobutylene, polypropylene and polyoxymethylene.  
   
   
       9 . The post-CMP treating liquid according to  claim 7 , wherein said functional group comprises at least one selected from the group consisting of a carboxyl group, an amino group and a sulfonyl group.  
   
   
       10 . The post-CMP treating liquid according to  claim 7 , wherein the primary particles diameter of the resin particles is in the range of 10 nm to 5000 nm.  
   
   
       11 . The post-CMP treating liquid according to  claim 7 , wherein a concentration of said resin particles is in the range of 0.01 wt % to 20 wt %.  
   
   
       12 . The post-CMP treating liquid according to  claim 7 , further comprising at least one of a chelate complex-forming agent and a surfactant.  
   
   
       13 - 23 . (canceled)  
   
   
       24 . The post-CMP treating liquid according to  claim 1 , wherein the treating liquid exhibits a polishing of an insulating film formed of at least one selected from the group consisting of SiC, SiCH, SiCN, SiOC, SiN, SiOCH, SiO, SiOP, SiOF and SiON of 10 nm/min or less.  
   
   
       25 . The post-CMP treating liquid according to  claim 1 , wherein the treating liquid exhibits a polishing rate of a conductive film formed of at least one selected from the group consisting of Al, W and polysilicone of 10 nm/min or less.  
   
   
       26 . The post-CMP treating liquid according to  claim 7 , wherein the treating liquid exhibits a polishing of an insulating film formed of at least one selected from the group consisting of SiC, SiCH, SiCN, SiOC, SiN, SiOCH, SiO, SiOP, SiOF and SiON of 10 nm/min or less.  
   
   
       27 . The post-CMP treating liquid according to  claim 7 , wherein the treating liquid exhibits a polishing rate of a conductive film formed of at least one selected from the group consisting of Al, W and polysilicone of 10 nm/min or less.