US2005116347A1PendingUtilityA1

Deposition of fluorosilsesquioxane films

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Assignee: HONEYWELL INT INCPriority: Oct 18, 1999Filed: Dec 22, 2004Published: Jun 2, 2005
Est. expiryOct 18, 2019(expired)· nominal 20-yr term from priority
Inventors:Nigel Hacker
H10P 14/6922H10P 14/6686H10P 14/6342H10P 14/6336H10P 14/6334H10P 14/665H10P 14/6924C01B 33/113Y10T428/31663C09D 4/00C09D 183/08C23C 16/401Y10T428/249969
45
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Claims

Abstract

There is provided an array of fluoro-substituted silsesquioxane thin film precursors having a structure wherein fluoro groups are bonded to the silicon atoms of a silsesquioxane cage. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [F—SiO 1.5 ] x [H—SiO 1.5 ] y , wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. Also provided are films made from these precursors and objects comprising these films.

Claims

exact text as granted — not AI-modified
1 - 107 . (canceled)  
   
   
       108 . A method of forming a porous low k dielectric film, said method comprising: 
 providing a vaporizable material having the formula:      [F—SiO 1.5 ] x [H—SiO 1.5 ] y ,    wherein:    x+y=n;    n is an integer between 2 and 30;    x is an integer between 1 and n; and    y is a number between 0 and n;    vaporizing the vaporizable material to form a vaporized material;    depositing the vaporized material onto a substrate; and    subjecting the vaporized material to radiation from a radiation source.    
   
   
       109 . A porous low k film formed by the method of  claim 108 .  
   
   
       110 . The porous low k film of  claim 109 , wherein the film has a dielectric constant of about 1.5 to about 3.  
   
   
       111 . The porous low k film of  claim 110 , wherein the film has a dielectric constant of about 1.5 to about 2.  
   
   
       112 . A semiconductor wafer comprising the film of  claim 109 .  
   
   
       113 . A semiconductor wafer comprising the film of  claim 110 .  
   
   
       114 . A semiconductor wafer comprising the film of  claim 111 .  
   
   
       115 . A method of forming a porous low k dielectric film, said method comprising: 
 providing a vaporizable material having the formula:      [H a SiO b ] c [F a SiO b ] d ,    wherein    a is less than or equal to 1;    b is greater than or equal to 1.5; and    c and d are members independently selected from the group consisting of the integers greater than 10.    vaporizing the vaporizable material to form a vaporized material;    depositing the vaporized material onto a substrate; and    curing the vaporized material.    
   
   
       116 . The method of  claim 115 , wherein about 75% of the vaporizable material has a molecular weight of less than about 3000 Daltons.  
   
   
       117 . The method according to  claim 116 , wherein about 75% of the vaporizable material has a molecular weight of less than about 1800 Daltons.  
   
   
       118 . The method according to  claim 117 , wherein about 75% of said vaporizable material has a molecular weight of less than about 1600 Daltons.  
   
   
       119 . The method of  claim 115 , wherein depositing comprises vapor deposition, spraying, sputtering or combinations thereof.  
   
   
       120 . The method of  claim 119 , wherein vapor deposition comprises chemical vapor deposition, physical vapor deposition or combinations thereof.  
   
   
       121 . The method of  claim 120 , wherein chemical vapor deposition comprises atmospheric chemical vapor deposition, low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition or combinations thereof.  
   
   
       122 . The method of  claim 115 , wherein the vaporizable material comprises a film precursor.  
   
   
       123 . The method of  claim 115 , wherein vaporizing is carried out at a temperature of from about 50° C. to about 300° C.  
   
   
       124 . The method according to  claim 115 , wherein vaporizing is performed under vacuum.  
   
   
       125 . The method according to  claim 123 , wherein vaporizing is performed under vacuum.  
   
   
       126 . The method of  claim 115 , wherein curing comprises ultraviolet light, electron beam or combinations thereof.  
   
   
       127 . The method of  claim 126 , wherein curing is accomplished by heating to a temperature of from about 150° C. to about 700° C.  
   
   
       128 . The method of  claim 127 , wherein said temperature is from about 200° C. to about 500° C.  
   
   
       129 . A porous low k film formed by the method of  claim 115 .  
   
   
       130 . The method of  claim 115 , wherein the vaporizable material comprises a CVD precursor.  
   
   
       131 . The porous low k film of  claim 129 , wherein the film has a dielectric constant of about 1.5 to about 3.  
   
   
       132 . The porous low k film of  claim 131 , wherein the film has a dielectric constant of about 1.5 to about 2.  
   
   
       133 . A semiconductor wafer comprising the film of  claim 129 .  
   
   
       134 . A semiconductor wafer comprising the film of  claim 131 .  
   
   
       135 . A semiconductor wafer comprising the film of  claim 132 .  
   
   
       136 . A method of forming a porous low k dielectric film, said method comprising: 
 providing a vaporizable material having the formula:      [F—SiO 1.5 ] x [H—SiO 1.5 ] y ,    wherein:    x+y=n;    n is an integer between 2 and 30;    x is an integer between 1 and n; and    y is a number between 0 and n;    vaporizing the vaporizable material to form a vaporized material;    depositing the vaporized material onto a substrate; and    subjecting the vaporized material to radiation from a radiation source.    
   
   
       137 . A porous low k film formed by the method of  claim 136 .  
   
   
       138 . The porous low k film of  claim 136 , wherein the film has a dielectric constant of about 1.5 to about 3.  
   
   
       139 . The porous low k film of  claim 138 , wherein the film has a dielectric constant of about 1.5 to about 2.  
   
   
       140 . A semiconductor wafer comprising the film of  claim 137 .  
   
   
       141 . A semiconductor wafer comprising the film of  claim 138 .  
   
   
       142 . A semiconductor wafer comprising the film of  claim 139 .  
   
   
       143 . A method of forming a porous low k dielectric film, said method comprising: 
 providing a vaporizable material having the formula:      [H a SiO b ] c [F a SiO b ] d ,    wherein    a is less than or equal to 1;    b is greater than or equal to 1.5; and    c and d are members independently selected from the group consisting of the integers greater than 10.    vaporizing the vaporizable material to form a vaporized material;    depositing the vaporized material onto a substrate; and    subjecting the vaporized material to radiation from a radiation source.    
   
   
       144 . The method of  claim 143 , wherein about 75% of the vaporizable material has a molecular weight of less than about 3000 Daltons.  
   
   
       145 . The method according to  claim 144 , wherein about 75% of the vaporizable material has a molecular weight of less than about 1800 Daltons.  
   
   
       146 . The method according to  claim 145 , wherein about 75% of said vaporizable material has a molecular weight of less than about 1600 Daltons.  
   
   
       147 . The method of  claim 143 , wherein depositing comprises vapor deposition, spraying, sputtering or combinations thereof.  
   
   
       148 . The method of  claim 147 , wherein vapor deposition comprises chemical vapor deposition, physical vapor deposition or combinations thereof.  
   
   
       149 . The method of  claim 148 , wherein chemical vapor deposition comprises atmospheric chemical vapor deposition, low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition or combinations thereof.  
   
   
       150 . The method of  claim 143 , wherein the vaporizable material comprises a film precursor.  
   
   
       151 . The method of  claim 143 , wherein vaporizing is carried out at a temperature of from about 50° C. to about 300° C.  
   
   
       152 . The method according to  claim 143 , wherein vaporizing is performed under vacuum.  
   
   
       153 . The method according to  claim 151 , wherein vaporizing is performed under vacuum.  
   
   
       154 . The method of  claim 143 , wherein subjecting to radiation from a radiation source comprises ultraviolet radiation, electron beam radiation or combinations thereof.  
   
   
       155 . A porous low k film formed by the method of  claim 143 .  
   
   
       156 . The method of  claim 143 , wherein the vaporizable material comprises a CVD precursor.  
   
   
       157 . The porous low k film of  claim 155 , wherein the film has a dielectric constant of about 1.5 to about 3.  
   
   
       158 . The porous low k film of  claim 157 , wherein the film has a dielectric constant of about 1.5 to about 2.  
   
   
       159 . A semiconductor wafer comprising the film of  claim 155 .  
   
   
       160 . A semiconductor wafer comprising the film of  claim 157 .  
   
   
       161 . A semiconductor wafer comprising the film of  claim 158.

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