Thermal-type infra-red ray solid-state image sensor and method of fabricating the same

Abstract

A thermal-type infra-red ray solid-state image sensor includes at least one device for detecting infra-red ray, wherein the device is comprised of a substrate including a signal-reading circuit, a contact electrode formed on the substrate and electrically connected to the signal-reading circuit, a diaphragm spaced away from and above the substrate, a support supporting the diaphragm such that the diaphragm floats above the substrate, and being composed of electrically conductive material to electrically connect the contact electrode to the diaphragm, and a hood formed on the diaphragm for preventing infra-red ray from being radiated to the support, absorbing the infra-red ray, and transferring heat resulted from the thus absorbed infra-red ray, to the diaphragm. The hood is comprised of a sidewall standing on the diaphragm, and an upper plate extending inwardly of the sidewall from an upper edge of the sidewall, the upper plate being formed with an opening.

1 . A thermal-type infra-red ray solid-state image sensor including at least one device for detecting infra-red ray, 
 said device comprising:    a substrate including a signal-reading circuit;    a contact electrode formed on said substrate and electrically connected to said signal-reading circuit;    a diaphragm spaced away from and above said substrate, said diaphragm including an infra-red ray absorber absorbing infra-red ray to be heated, a temperature detector detecting a temperature of said infra-red ray absorber, and an electrode electrically connected to said temperature detector;    a support supporting said diaphragm such that said diaphragm floats above said substrate, and being at least partially composed of electrically conductive material to electrically connect said contact electrode to said electrode; and    a hood formed on said diaphragm for preventing infra-red ray from being radiated to said support, absorbing said infra-red ray, and transferring heat resulted from the thus absorbed infra-red ray, to said diaphragm,    said hood being comprised of a sidewall standing on said diaphragm, and an upper plate extending inwardly and outwardly of said sidewall from an upper edge of said sidewall, said upper plate being formed with an opening through which said diaphragm is exposed.    
   
   
       2 . The thermal-type infra-red ray solid-state image sensor as set forth in  claim 1 , wherein said upper plate is formed centrally with said opening.  
   
   
       3 . The thermal-type infra-red ray solid-state image sensor as set forth in  claim 1 , wherein said sidewall has a V-shaped cross-section.  
   
   
       4 . A thermal-type infra-red ray solid-state image sensor including at least one device for detecting infra-red ray, 
 said device comprising:    a substrate including a signal-reading circuit;    a contact electrode formed on said substrate and electrically connected to said signal-reading circuit;    a diaphragm spaced away from and above said substrate, said diaphragm including an infra-red ray absorber absorbing infra-red ray to be heated, a temperature detector detecting a temperature of said infra-red ray absorber, and an electrode electrically connected to said temperature detector;    a support supporting said diaphragm such that said diaphragm floats above said substrate, and being at least partially composed of electrically conductive material to electrically connect said contact electrode to said electrode; and    a hood formed on said diaphragm for preventing infra-red ray from being radiated to said support, absorbing said infra-red ray, and transferring heat resulted from the thus absorbed infra-red ray, to said diaphragm,    said hood being comprised of, when vertically viewed, a first portion standing on said diaphragm and extending upwardly and outwardly of said diaphragm to cover said support with a space therebetween, and a second portion standing on said diaphragm and extending upwardly and inwardly of said diaphragm.    
   
   
       5 . The thermal-type infra-red ray solid-state image sensor as set forth in  claim 4 , wherein said first and second portions stand on said diaphragm at a common location.  
   
   
       6 . The thermal-type infra-red ray solid-state image sensor as set forth in  claim 4 , wherein said first and second portions are V-shaped.  
   
   
       7 . A method of fabricating a thermal type infra-red ray solid-state image sensor, comprising the steps of: 
 (a) forming a first sacrifice layer on a substrate except on a. contact electrode formed on said substrate and electrically connected to a signal-reading circuit included in said substrate;    (b) forming a diaphragm and a support on said first sacrifice layer, said support supporting said diaphragm such that said diaphragm floats above said substrate, and being at least partially composed of electrically conductive material to electrically connect said contact electrode to said diaphragm;    (c) forming a second sacrifice layer outside said diaphragm and on said diaphragm in an island shape;    (d) depositing a material of which a hood is composed, on both said second sacrifice layer and said diaphragm;    (e) patterning said material to remove a part of said second sacrifice layer formed outside said diaphragm and a part of said second sacrifice layer formed on said diaphragm, to form said hood; and    (f) removing said first and second sacrifice layers through openings of said material resulted from said step (e).    
   
   
       8 . The method as set forth in  claim 7 , wherein said hood is formed in said step (e) to be comprised of a sidewall standing on said diaphragm, and an upper plate extending inwardly of said sidewall from an upper edge of said sidewall, said upper plate being formed with an opening through which said diaphragm is exposed.  
   
   
       9 . The method as set forth in  claim 8 , wherein said upper plate is formed centrally with said opening.  
   
   
       10 . The method as set forth in  claim 7 , wherein said hood is formed in said step (e) to be being comprised of, when vertically viewed, a first portion standing on said diaphragm and extending upwardly and outwardly of said diaphragm to cover said support with a space therebetween, and a second portion standing on said diaphragm and extending upwardly and inwardly of said diaphragm.  
   
   
       11 . The method as set forth in  claim 10 , wherein said first and second portions stand on said diaphragm at a common location.  
   
   
       12 . The method as set forth in  claim 10 , wherein said first and second portions are V-shaped.  
   
   
       13 . The method as set forth in  claim 7 , wherein said first sacrifice layer is composed of polyimide.  
   
   
       14 . The method as set forth in  claim 7 , wherein said second sacrifice layer is composed of polyimide.  
   
   
       15 . The method as set forth in  claim 7 , wherein said first sacrifice layer is composed of polysilicon.  
   
   
       16 . The method as set forth in  claim 7 , wherein said second sacrifice layer is composed of polysilicon.  
   
   
       17 . The method as set forth in  claim 7 , wherein said first sacrifice layer is composed of aluminum.  
   
   
       18 . The method as set forth in  claim 7 , wherein said second sacrifice layer is composed of aluminum.  
   
   
       19 . The method as set forth in  claim 7 , wherein said diaphragm and said support are composed of silicon oxide, and said first and second sacrifice layers are composed of silicon nitride.  
   
   
       20 . The method as set forth in  claim 7 , wherein said diaphragm and said support are composed of silicon nitride, and said first and second sacrifice layers are composed of silicon oxide.