US2005110169A1PendingUtilityA1

Semiconductor device and method of making the same

Assignee: FUJITSU LTDPriority: Sep 11, 2001Filed: Dec 23, 2004Published: May 26, 2005
Est. expirySep 11, 2021(expired)· nominal 20-yr term from priority
H10W 90/734H10W 90/724H10W 72/856H10W 72/073H10W 72/072H10W 74/15H10W 74/012H10W 72/30H10W 90/701H10W 70/60
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Claims

Abstract

According to a method of making a semiconductor device, a semiconductor chip is bonded to a substrate via bumps by flip-chip bonding. Then, a sealing adhesive composition is loaded between the semiconductor chip and the substrate to provide an adhesive sealing. The sealing adhesive composition, which is capable of hardening in two stages, contains at least a first main resin ingredient, a second main resin ingredient and a hardening agent. Then, the adhesive sealing is heated for primary hardening. Then, the substrate is placed on a mother board with a solder material interposed between the substrate and the mother board. Finally, the adhesive sealing is heated for secondary hardening while the solder material is reflowed for bonding the substrate to the mother board.

Claims

exact text as granted — not AI-modified
1 - 13 . (canceled)  
     
     
         14 . A semiconductor device comprising: 
 a substrate;    a semiconductor chip bonded to the substrate via bumps; and    an adhesive sealing formed between the substrate and the semiconductor chip;    wherein the adhesive sealing contains at least a first main resin ingredient and a second main resin ingredient both of which are hardened by a hardening agent selected from the group consisting of 4,4′-dihydroxybiphenyl, nonyl phenol and tetramethyl bishphenol A, the first main resin ingredient being selected from the group consisting of a bisphenol resin, a cycloaliphatic epoxy resin and a naphthalene resin.    
     
     
         15 . The semiconductor device according to  claim 14 , wherein the sealing adhesive composition further contains an inorganic filler.  
     
     
         16 . The semiconductor device according to  claim 15 , wherein the inorganic filler is selected from the group consisting of silica powder and alumina powder.  
     
     
         17 . The semiconductor device according to  claim 15 , wherein the sealing adhesive composition further contains a coupling agent.  
     
     
         18 . A semiconductor device comprising: 
 a substrate;    a semiconductor chip bonded to the substrate via bumps; and    an adhesive sealing formed between the substrate and the semiconductor chip, the adhesive sealing containing an inorganic filler;    wherein the adhesive sealing includes a first portion adjoining the substrate and containing the inorganic filler at a higher density, and a second portion adjoining the semiconductor chip and containing the inorganic filler at a lower density.

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