Method for forming openings in low dielectric constant material layer

Abstract

The invention is directed towards a method for forming openings in low-k dielectric layers and a structure for forming an opening thereof. A mask layer comprising at least one metal hard mask layer and one or more hard mask layers is applied on the dielectric layer for forming the opening.

1 - 27 . (canceled)  
     
     
         28 . A structure for forming an opening on a substrate, comprising: 
 a first dielectric layer on the substrate;    a second dielectric layer on the dielectric layer;    a plurality of mask layers at least comprising a metal mask layer on the second dielectric layer; and    an anti-reflection layer on the plurality of mask layers.    
     
     
         29 . The structure as claimed in  claim 28 , wherein materials for forming the first and second dielectric layers include inorganic polymer containing silicon.  
     
     
         30 . The structure as claimed in  claim 28 , wherein the anti-reflection layer is a bottom anti-reflection coating layer made of fluid organic polymer.  
     
     
         31 . The structure as claimed in  claim 28 , wherein the metal mask layer is made of one of the following materials selected from the group consisting of tantalum, tantalum nitride, titanium, titanium nitride, tungsten and tungsten nitride.  
     
     
         32 . The structure as claimed in  claim 28 , wherein the mask layer is a silicon nitride layer or a silicon carbide layer.  
     
     
         33 . A structure for forming an opening on a substrate, comprising: 
 a first dielectric layer on the substrate;    a first stop layer on the first dielectric layer;    a second dielectric layer on the first stop layer;    a third dielectric layer on the second dielectric layer;    a plurality of mask layers at least comprising a metal mask layer on the third dielectric layer; and    an anti-reflection layer on the plurality of mask layers.    
     
     
         34 . The structure as claimed in  claim 33 , wherein materials for forming the first and second dielectric layers include inorganic polymer containing silicon.  
     
     
         35 . The structure as claimed in  claim 33 , wherein the anti-reflection layer is a bottom anti-reflection coating layer made of fluid organic polymer.  
     
     
         36 . The structure as claimed in  claim 33 , wherein the metal mask layer is made of one of the following materials selected from the group consisting of tantalum, tantalum nitride, titanium, titanium nitride, tungsten and tungsten nitride.  
     
     
         37 . The structure as claimed in  claim 33 , wherein the mask layer is a silicon nitride layer or a silicon carbide layer.  
     
     
         38 . The structure as claimed in  claim 33 , wherein the first stop layer is a silicon nitride layer or a silicon carbide layer.  
     
     
         39 . The structure as claimed in  claim 33 , wherein the third dielectric layer is a second stop layer.  
     
     
         40 . A structure for forming an opening on a substrate, comprising: 
 a dielectric layer on the substrate;    a plurality of mask layers at least comprising a metal mask layer on the dielectric layer; and    an anti-reflection layer on the plurality of mask layers.    
     
     
         41 . The structure as claimed in  claim 40 , wherein materials for forming the dielectric layer include inorganic polymer containing silicon.  
     
     
         42 . The structure as claimed in  claim 40 , wherein the anti-reflection layer is a bottom anti-reflection coating layer made of fluid organic polymer.  
     
     
         43 . The structure as claimed in  claim 40 , wherein the metal mask layer is made of one of the following materials selected from the group consisting of tantalum, tantalum nitride, titanium, titanium nitride, tungsten and tungsten nitride.  
     
     
         44 . The structure as claimed in  claim 40 , wherein the mask layer is a silicon nitride layer or a silicon carbide layer.  
     
     
         45 . A structure for forming an opening on a substrate, comprising: 
 a first dielectric layer on the substrate;    a stop layer on the first dielectric layer;    a second dielectric layer on the stop layer;    a plurality of mask layers at least comprising a metal mask layer on the second dielectric layer; and    an anti-reflection layer on the plurality of mask layers.    
     
     
         46 . The structure as claimed in  claim 45 , wherein materials for forming the first and second dielectric layers include inorganic polymer containing silicon.  
     
     
         47 . The structure as claimed in  claim 45 , wherein the anti-reflection layer is a bottom anti-reflection coating layer made of fluid organic polymer.  
     
     
         48 . The structure as claimed in  claim 45 , wherein the metal mask layer is made of one of the following materials selected from the group consisting of tantalum, tantalum nitride, titanium, titanium nitride, tungsten and tungsten nitride.  
     
     
         49 . The structure as claimed in  claim 45 , wherein the mask layer is a silicon nitride layer or a silicon carbide layer.  
     
     
         50 . The structure as claimed in  claim 45 , wherein the stop layer is a silicon nitride layer or a silicon carbide layer.