Method for manufacturing a solid state imaging device and a method for manufacturing a lens

Abstract

A solid state imaging device includes a transparent insulation film. The insulation film is laminated on transfer electrodes over the power supply lines. A transparent protection film, which has a refractive index that is greater than that of the insulation film, is laminated on the insulation film. The transparent insulation film has portions above the channels in which the thickness continuously increases from the center of adjacent channels to the associated channel separating region.

1 - 14 . (canceled)  
   
   
       15 . A method for manufacturing a solid state imaging device, the method comprising: 
 laminating a first transparent film having a predetermined thickness on a semiconductor substrate, wherein the semiconductor substrate has a plurality of pixel areas for converting irradiated light to information charges;    anisotropically etching the first transparent film to decrease the thickness of the first transparent film within a predetermined area according to locations of the pixel areas;    isotropically etching the first transparent film after the anisotropic etching to continuously increase the thickness of the first transparent film above the pixel areas from the center of each pixel area to outside of each pixel area; and    laminating a second transparent film having a refractive index that is greater than that of the first transparent film on the semiconductor substrate.    
   
   
       16 . The method for manufacturing a solid state imaging device according to  claim 15 , wherein the solid state imaging device has a plurality of separating regions that electrically separate each of the pixel areas, wherein isotropically etching includes continuously decreasing the thickness of the first transparent film above the separating regions from the center of each separating region toward each pixel area adjacent to each separating region.  
   
   
       17 . The method for manufacturing a solid state imaging device according to  claim 15 , wherein the solid state imaging device is a frame transfer type, wherein the pixel areas are channels that are arranged in parallel spaced from each other at predetermined intervals on the semiconductor substrate and are separated by the separating regions.  
   
   
       18 . The method for manufacturing a solid state imaging device according to  claim 17 , wherein the solid state imaging device has a plurality of separating regions that electrically separate each of the pixel areas, wherein isotropically etching includes continuously decreasing the thickness of the first transparent film above the separating regions from the center of each separating region toward each pixel area adjacent to each separating region.  
   
   
       19 . A method for manufacturing a lens, the method comprising: 
 laminating a first transparent film having a predetermined thickness on a semiconductor substrate;    anisotropically etching the first transparent film to decrease the thickness of the first transparent film within a predetermined area;    isotropically etching the first transparent film after the anisotropic etching to continuously increase the thickness of the first transparent film from inside of the predetermined area toward outside of the predetermined area; and    laminating a second transparent film having a refractive index that is greater than that of the first transparent film on the semiconductor substrate.    
   
   
       20 . The method for manufacturing a lens according to  claim 19  further comprising performing an etch back process or chemical mechanical polishing on the surface of the second transparent film.  
   
   
       21 . The method for manufacturing a lens according to  claim 19 , wherein the first transparent film is formed from silicon oxide and the second transparent film is formed from silicon nitride.