Chamber cleaning via rapid thermal process during a cleaning period

Abstract

A method for cleaning a process chamber, comprising the steps of introducing at least one cleaning gas to the process chamber; and employing a rapid heating module located in the process chamber, wherein the rapid heating module increases the temperature of chamber parts and improves the surface temperature uniformity of chamber parts when the module is turned on, thereby assisting the cleaning activity of the cleaning gas such that the process chamber is cleaned.

1 . An apparatus for processing a substrate, comprising: 
 a rectangular chamber body defined by a chamber wall, chamber bottom and top chamber portion;    a lamp assembly disposed in the chamber body; and    a substrate support disposed on the chamber bottom.    
   
   
       2 . The apparatus of  claim 1 , further comprising a resistive heater assembly, an inductive heater assembly, or a combination thereof.  
   
   
       3 . The apparatus of  claim 1 , further comprising a remote activation source coupled to the rectangular chamber body.  
   
   
       4 . The apparatus of  claim 3 , further comprising a cleaning gas source connected to the remote activation source.  
   
   
       5 . The apparatus of  claim 2 , wherein the process chamber further comprises one or more liners disposed adjacent the chamber walls.  
   
   
       6 . The apparatus of  claim 2 , wherein the resistive heater assembly or the inductive heater assembly is embedded in the chamber wall.  
   
   
       7 . The apparatus of  claim 1 , further comprising an RF power source coupled to the showerhead.  
   
   
       8 . The apparatus of  claim 1 , wherein the substrate support comprises a resistive heated substrate support.  
   
   
       9 . The apparatus of  claim 1 , further comprising a slit valve disposed in one chamber wall and a dry pump coupled to one chamber wall.  
   
   
       10 . The apparatus of  claim 5 , further comprising one or more thermocouples disposed on the chamber wall or one or more liners.  
   
   
       11 . The apparatus of  claim 5 , further comprising one or more spacers disposed between the one or more liners and the chamber walls.  
   
   
       12 . The apparatus of  claim 5 , further comprising a showerhead disposed in the top chamber portion.  
   
   
       13 . An apparatus for processing a substrate, comprising: 
 a rectangular chamber body defined by a chamber wall, chamber bottom, and top chamber portion;    a rapid heating module comprising at least a lamp assembly disposed in the rectangular chamber body;    a substrate support disposed on the chamber bottom; and    a remote plasma source cleaning system fluidly connected to the rectangular chamber body.    
   
   
       14 . The apparatus of  claim 12 , wherein the remote plasma source cleaning system comprises a cleaning gas source connected to a remote activation chamber.  
   
   
       15 . The apparatus of  claim 13 , wherein the cleaning gas source comprises a cleaning gas source comprises a source of a precursor gas, an electronically-operated valve and flow controlled mechanism coupled to the source of the precursor gas, and a conduit disposed between the source of precursor gas and the remote activation chamber.  
   
   
       16 . The apparatus of  claim 13 , further comprising a power activation source disposed adjacent the remote activation chamber.  
   
   
       17 . The apparatus of  claim 12  further comprising a resistive heater assembly, an inductive heater assembly, or a combination thereof.  
   
   
       18 . The apparatus of  claim 16 , wherein the process chamber further comprises one or more liners disposed adjacent the chamber walls.  
   
   
       19 . The apparatus of  claim 16 , wherein the resistive heater assembly or the inductive heater assembly is embedded in the chamber wall.  
   
   
       20 . The apparatus of  claim 12 , wherein the substrate support comprises a resistive heated substrate support.  
   
   
       21 . The apparatus of  claim 12 , further comprising a slit valve disposed in one chamber wall and a dry pump coupled to one chamber wall.  
   
   
       22 . The apparatus of  claim 17 , further comprising one or more thermocouples disposed on the chamber wall or one or more liners.  
   
   
       23 . The apparatus of  claim 17 , further comprising one or more spacers disposed between the one or more liners and the chamber walls.  
   
   
       24 . The apparatus of  claim 12 , further comprising a showerhead disposed in the top chamber portion.  
   
   
       25 . An apparatus for processing a substrate, comprising: 
 a rectangular chamber body defined by a chamber wall, chamber bottom, and top chamber portion;    a showerhead disposed in the top chamber portion;    a lamp assembly disposed in the rectangular chamber body;    a substrate support disposed on the chamber bottom; and    a remote plasma source cleaning system fluidly connected to the rectangular chamber body, and the remote plasma source cleaning system comprising: 
 a cleaning gas source comprising: 
 a source of a precursor gas and  
 an electronically-operated valve and flow controlled mechanism coupled to the source of the precursor gas;  
 
 a remote activation chamber connected to the cleaning gas source by a conduit; and  
 a power activation source disposed adjacent the remote activation chamber.  
   
   
   
       26 . The apparatus of  claim 23 , wherein the substrate support comprises a resistive heated substrate support.  
   
   
       27 . The apparatus of  claim 23 , further comprising a slit valve disposed in one chamber wall and a dry pump coupled to one chamber wall.