Method and apparatus for polishing a substrate while washing a polishing pad of the apparatus with at least one free-flowing vertical stream of liquid

Abstract

A method and apparatus for polishing a substrate with a polishing pad and slurry entails washing polishing-pollutants produced by the polishing operation off of the pad in such a way that the pollutants are not splashed onto components of the polishing apparatus. A washing solution for removing the pollutants is directed onto the polishing pad as at least one free-flowing vertical stream. because the washing solution flows freely and vertically as it impinges the polishing pad, the washing solution does not rebound from the pad and flows from the surface of the polishing pad without causing the pollutants on the pad to be splashed up from the surface of the pad.

1 . A polishing method in the manufacture of semiconductor devices, said method comprising steps of: 
 rotating a substrate;    rotating a polishing pad;    pressing the rotating substrate against the rotating polishing pad and providing slurry on the polishing pad to polish the substrate; and    while the substrate is being polished, forming at least one free-flowing vertical stream of washing liquid that impinges the polishing pad to remove polishing-pollutants from the polishing pad.    
   
   
       2 . The polishing method as claimed in  claim 1 , and further comprising the step of allowing the at least one free-flowing vertical stream of washing liquid to impinge the polishing pad for 1 to 5 seconds after the substrate has been polished to eliminate slurry and polishing pollutants still remaining on the polishing pad.  
   
   
       3 . The polishing method as claimed in  claim 1 , wherein the washing liquid is deionized water.  
   
   
       4 . The polishing method as claimed in  claim 1 , wherein the forming of the at least one free-flowing vertical stream of washing liquid comprises forming a plurality of free-flowing vertical streams of washing liquid that are spaced apart from one another by equal intervals.  
   
   
       5 . The polishing method as claimed in  claim 1 , wherein the at least one free-flowing vertical stream is formed beginning at a height of about 20 to 40 mm above the surface of the polishing pad.  
   
   
       6 - 18 . (canceled)