Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device including a first field effect transistor having a source, a first conductivity type drain, a gate, and a first conductivity type channel layer formed beneath the gate and between the source and the drain. The device also includes a first conductivity type well region, a second conductivity type channel layer formed on the surface of the well region, a first wire that connects an end of the second conductivity type channel layer to the first conductivity type drain, a second wire that connects the other end of the second conductivity type channel layer to a power source, and a third wire 208 that connects the first conductivity type well region to the gate of the first field effect transistor. This semiconductor device and manufacturing method thereof enables low power consumption and simple control of threshold voltage values as well as decreases the number of conventional manufacturing processes.

1 . A semiconductor device in which a first field effect transistor having a first conductivity type channel and a second field effect transistor having a second conductivity type channel are formed on a surface layer of a semiconductor substrate, characterized in that: 
 said first field effect transistor has a first conductivity type channel layer, a first conductivity type source region formed on one end of said first conductivity type channel layer, a first conductivity type drain region formed on the other end of said first conductivity type channel layer, and a gate region formed between said first conductivity type source region and first conductivity type drain region,    said second field effect transistor has a first conductivity type well region comprised of a gate region separated from said first field effect transistor and a second conductivity type channel layer in said first conductivity type well region;    a second conductivity type source region formed on one end of said second conductivity type channel layer and a second conductivity type drain region formed on the other end of said second conductivity type channel layer,    a first wire connects one end of said second conductivity type channel layer to said first conductivity type drain region,    a second wire connects the other end of said second conductivity type channel layer to a first power source,    a third wire connects said first conductivity type well region to said gate region of said first field effect transistor.    
   
   
       2 . A semiconductor device according to  claim 1 , wherein 
 said gate region of said first field effect transistor is comprised of a first conductivity type gate layer.    
   
   
       3 . A semiconductor device according to  claim 2 , wherein 
 a well contact region having an impurity concentration higher than said first conductivity type well region is formed on said first conductivity type well region comprised of said gate region of said second field effect transistor separated from said second conductivity type channel layer,    a third wire connects said well contact region to said gate region of said first field effect transistor.    
   
   
       4 . A semiconductor device according to  claim 1 , wherein 
 a well contact region having an impurity concentration higher than said first conductivity type well region is formed on said first conductivity type well region comprised of said gate region of said second field effect transistor separated from said second conductivity type channel layer,    a third wire connects said well contact region to said gate region of said first field effect transitor.    
   
   
       5 . A semiconductor device according to  claim 1 , wherein 
 said semiconductor substrate is a compound semiconductor substrate.    
   
   
       6 . A semiconductor device in which a first field effect transistor having a first conductivity type channel and a second junction type field effect transistor having a second conductivity type channel are formed on the surface layer of a semiconductor substrate, characterized in that: 
 said first field effect transistor has a first conductivity type channel layer, a first conductivity type source region formed on one end of said first conductivity type channel layer, a first conductivity type drain region formed on the other end of said first conductivity type channel layer, and a gate region formed between said first conductivity type source region and said first conductivity type drain region;    said second junction type field effect transistor has a second conductivity type channel layer separated from said first field effect transistor, a second conductivity type source region formed on one end of said second conductivity type channel layer, and a second conductivity type drain region formed the other end of said second conductivity type channel layer, wherein a gate region is not provided between the second conductivity type source region and second conductivity type drain region on said second conductivity type channel layer.    a first wire connects one end of said second conductivity type channel layer to said first conductivity type drain region.    a second wire connects the other end of said second conductivity type channel layer to a first power source.    a third wire connects said first conductivity type well region to said gate region of said first field effect transistor.    
   
   
       7 . A semiconductor device according to  claim 6 , wherein 
 said gate region of said first field effect transistor is comprised of a first conductivity type gate layer.    
   
   
       8 . A semiconductor device according to  claim 6 , wherein 
 said semiconductor substrate is a compound semiconductor substrate.    
   
   
       9 . A manufacturing method of a semiconductor device in which a first field effect transistor having a first conductivity type channel and a second field effect transistor having a second conductivity type channel are formed on the surface layer of a semiconductor substrate, comprising the processes of: 
 forming a first field effect transistor having a first conductivity type channel, a first conductivity type source region and a first conductivity type drain region, onto the surface layer of said semiconductor substrate;    forming a first conductivity type well region comprised of a gate region of said second field effect transistor, onto the surface layer of said semiconductor substrate separated from said first field effect transistor;    forming a second conductivity type channel layer onto the surface layer of said first conductivity type well region;    forming a first wire which connects one end of said second conductivity type channel layer to said first conductivity type drain region;    forming a second wire which connects the other end of said second conductivity type channel layer to a first power source; and    forming a third wire which connects said first conductivity type well region to said gate region of said first field effect transistor.    
   
   
       10 . A manufacturing method of the semiconductor device according to  claim 9 , wherein 
 the process in which said first field effect transistor is formed comprises the processes of: 
 forming a first conductivity type channel layer onto the surface layer of said semiconductor substrate;  
 forming said first conductivity type source region and said first conductivity type drain region onto the surface layer of said first conductivity type channel layer; and  
 forming a second conductivity type gate layer onto the surface layer of said first conductivity type channel layer between said first conductivity type source region and said first conductivity type drain region.  
   
   
   
       11 . A manufacturing method of the semiconductor device according to  claim 9 , further comprising: 
 a process that forms a well contact region containing first conductivity type impurities with a concentration higher than said first conductivity type well region onto the surface layer of said first conductivity type well region separated from said second conductivity type channel layer before forming said third wire after forming said second conductivity type channel layer.