US2005104027A1PendingUtilityA1
Three-dimensional integrated circuit with integrated heat sinks
Priority: Oct 17, 2003Filed: Oct 13, 2004Published: May 19, 2005
Est. expiryOct 17, 2023(expired)· nominal 20-yr term from priority
Inventors:Pavel Ivan Lazarev
H10W 90/724H10W 90/297H10W 90/288H10W 72/9415H10W 72/07254H10W 72/07253H10W 72/07236H10W 72/834H10W 72/244H10W 72/242H10W 72/234H10W 72/29H10W 90/00
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Claims
Abstract
The present invention is directed to a three-dimensional semiconducting integrated circuit incorporating an integrated heat-sink dissipating heat produced by the semiconductor device mounted thereon.
Claims
exact text as granted — not AI-modified1 . A three-dimensional integrated circuit comprising
(i) a heat sink, (ii) a set of discrete integrated circuits arranged one above another and mounted on said heat sink, each of said discrete integrated circuits comprising a heat-conducting substrate, and functional elements formed on front and/or rear surface of said substrate, wherein at least one of the functional elements is a heat-generating element, and (iii) a system of integrated heat sinks being in thermal contact with at least one of said substrates and with the heat sink.
2 . The three-dimensional integrated circuit according to claim 1 , wherein width, length, thickness and thermal conductivity of the substrate of said discrete integrated circuit, as well as the number, cross sectional area, length, and thermal conductivity of said integrated heat sinks, are selected so as to ensure that temperature in any region of the three-dimensional integrated circuit does not exceed a preset tolerable operation temperature determined for previously established intensities of said functional heat-generating elements and their known positions in the three-dimensional integrated circuit.
3 . The three-dimensional integrated circuit as in claim 1 in which the substrate of a bottom discrete integrated circuit is in direct thermal contact with the heat sink.
4 . The three-dimensional integrated circuit as in claims 1 , wherein at least one said substrate is an Al 2 O 3 based ceramic material.
5 . The three-dimensional integrated circuit as in claim 1 , wherein at least one functional element is comprises a semiconductor thin crystal film formed by rodlike supramolecules composed of at least one organic compound with conjugated π-system, wherein a crystal structure of the film has an intermolecular spacing of 3.4±0.3 Å in the direction of at least one crystal axis.
6 . The three-dimensional integrated circuit according to claim 5 , wherein said organic compound is a polycyclic organic compound comprising at least one component of the general structural formula {R} {F} n , where R is a polycyclic core with conjugated π-system, F are modifying functional groups, and n is the number of functional groups.
7 . The three-dimensional integrated circuit according to claim 6 , wherein said polycyclic organic compound is a sulfoderivative of a perynone dye of the general structural formula from the group consisting of structures I-XVII:
where n is an integer in the range of 1 to 4, p is an integer in the range of 0 to 6; Y is individually selected from the group consisting of H, Cl, F, Br, Alk, OH, OAlk, NO 2 and NH 2 ; M is a counterion; and j is the number of counterions in the molecule; for n>1, different counterions M can be involved.
8 . The three-dimensional integrated circuit according to claim 6 , wherein said polycyclic organic compound is a sulfoderivative of a heteroaromatic polycycloquinone of the general structural formula from the group XVIIIa-XVIIId:
where A 1 A 2 are fragments of the general structural formula
X 1 , X 3 , X 4 , X 5 , X 6 , X 7 , X 8 are substituents from the group consisting of H, OH, SO 3 H, such that at least one of these substituents is different from H; Y is a substituent from the group consisting of H, Cl, F, Br, Alk, OH, OAlk, NO 2 , NH 2 ; p is an integer in the range of 0, 1, 2, 3 and 4; n is an integer of the group including 0, 1, 2, such that at least one of fragments A 1 or A 2 comprises at least one sulfogroup; M is counterion; and j is the number of counterions in the molecule, which can be fractional if the counterion belongs to several molecules; for n>1, different counterions M can be involved.
9 . A three-dimensional integrated circuit according to claim 6 , wherein the polycyclic organic compound is a sulfoderivative of a heteroaromatic polycycloquinone of the general structural formula from the group XIXa-XIXc:
where A 1 A 2 are fragments of the general structural formula
X 1 , X 3 , X 4 , X 5 , X 6 , X 7 , X 8 are substituents from the group consisting of H, OH, SO 3 H, and Z is bridge forming new heterocyclic systems, said bridge is chosen from the series —O—, —SO 2 —, —SO 2 —O—; Y is a substituent from the series H, Cl, F, Br, Alk, OH, OAlk, NO2, NH2; p is an integer in the range of 0, 1, 2, 3 and 4; n is one of the group including 0, 1, 2, such that at least one of fragments A 1 or A 2 comprises at least one sulfogroup; M is counterion; and j is the number of counterions in the molecule, which can be fractional if the counterion belongs to several molecules; for n>1, different counterions M can be involved.
10 . A three-dimensional integrated circuit according to claim 6 , wherein said polycyclic organic compound is a sulfoderivative of dyes comprising anthraquinone fragment of the general structural formula from the group XX-XXIV:
where n is an integer in the range of 1 to 4, p is an integer in the range of 0 to 8; Y is individually selected from the group consisting of H, Cl, F, Br, Alk, OH, OAlk, NO 2 and NH 2 ; M is a counterion; and j is the number of counterions in the molecule; for n>1, different counterions M can be involved.
11 . A The three-dimensional integrated circuit according to claim 6 , wherein said organic compound is a sulfoderivative of fused polycyclic heteroaromatic compound comprising 5 or 6-membered rings with N or O or both: pyrrole, pyridine, oxazole, furan, oxazine, azine, chromone, pyridopyrimidine of the general structural formula from the group XXV-XXVIII:
where n is an integer in the range of 1 to 4, p is an integer in the range of 0 to 8; Y is individually selected from the group consisting of H, Cl, F, Br, Alk, OH, OAlk, NO 2 and NH 2 ; M is a counterion; and j is the number of counterions in the molecule; for n>1, different counterions M can be involved.
12 . A three-dimensional integrated circuit according to claim 1 , wherein at least one said functional heat-generating element is a semiconductor thin film transistor.
13 . A three-dimensional integrated circuit according to claim 1 , wherein at least one said functional heat-generating element is a semiconductor diode.
14 . A three-dimensional integrated circuit according to claim 1 , wherein at least one said functional heat-generating element is a thin film resistor.
15 . A three-dimensional integrated circuit according to claim 1 , wherein at least one said integrated heat sink is made of an Al 2 O 3 based ceramic material.
16 . A three-dimensional integrated circuit according to claim 1 , wherein said integrated heat sink has a front surface facing said discrete integrated circuits and an edge face facing the heat sink, said integrated heat sink having a cross-sectional shape selected from the group consisting of circle, ellipse, square, rectangle, or polygon, or any combination thereof.
17 . A three-dimensional integrated circuit according to claim 16 , further comprising at least one bonding layer made of a heat-conducting adhesive material and located between the front surface at least of one of said integrated heat sinks and the edge face at least of one of said substrates.
18 . A three-dimensional integrated circuit according to claim 16 , further comprising at least one set of arched solder joints forming thermal contacts between the front surface of at least one of said integrated heat sinks and at least one surface of at least one of said substrates.
19 . A three-dimensional integrated circuit according to claim 18 , wherein said arched solder joints have nonuniform cross sections along their lengths.
20 . A three-dimensional integrated circuit according to claims 18 , further comprising at least two rows of pads, wherein first row of pads is positioned on said integrated heat sink and second row of pads on said substrate adjacent to the first row of pads and arranged along the edge face of said substrate, said pads in at least one of the rows having elongated pad extensions which are narrower than the pads, and said set of arched solder joints connects said pads of the first row with the pads of the second row.
21 . A three-dimensional integrated circuit according to claim 16 , further comprising at least one bonding layer made of a heat-conducting adhesive material and located between said heat sink and the edge face at least of one of said integrated heat sinks.
22 . A three-dimensional integrated circuit according to claims 1 , wherein at least one said discrete integrated circuit further comprising a conducting wiring pattern formed on the front and the rear substrate surfaces, a front protective dielectric layer covering the wiring pattern and the functional elements situated on the front surface of the substrate, and a rear protective dielectric layer covering the wiring pattern and the functional elements situated on the rear surface of the substrate.
23 . A three-dimensional integrated circuit according to claim 22 , wherein the discrete integrated circuit further comprises at least one front contact pad, situated on said front protective dielectric layer, and at least one electrically conducting element penetrating through said front protective dielectric layer and through the substrate so as to connect the wiring pattern of the rear surface of said substrate to said front contact pad.
24 . A three-dimensional integrated circuit according to claim 22 , wherein the discrete integrated circuit further comprises at least one rear contact pad, situated on said rear protective dielectric layer, and at least one electrically conducting element penetrating through said rear protective dielectric layer and through the substrate so as to connect the wiring pattern of the front surface of said substrate to said rear contact pads.
25 . A three-dimensional integrated circuit according to claim 22 , wherein the discrete integrated circuit further comprises at least one front contact pad situated on said front protective dielectric layer, at least one rear contact pad situated on said rear protective dielectric layer, and at least one electrically conducting element penetrating through the front protective dielectric layer, the substrate, and the rear protective dielectric layer so as to connect said front contact pad to said rear contact pad.
26 . A three-dimensional integrated circuit according to claims 1 , wherein at least one said discrete integrated circuit further comprising a conducting wiring pattern and the functional elements formed at least on the front substrate surface, a front protective dielectric layer covering said wiring pattern and the functional elements connected to the said wiring pattern, at least one front contact pad situated on said front protective dielectric layer, and at least one electrically conducting element penetrating through said front protective dielectric layer and which connects the wiring pattern to said front contact pad.
27 . A three-dimensional integrated circuit according to claims 1 , wherein at least one said discrete integrated circuit further comprising a conducting wiring pattern formed at least on the rear substrate surface, a rear protective dielectric layer covering said wiring pattern and the functional elements connected to said wiring pattern, at least one rear contact pad, situated on said rear protective dielectric layer, and at least one electrically conducting element penetrating through said rear protective dielectric layer, which connects the wiring pattern to said rear contact pad.
28 . A three-dimensional integrated circuit according to claim 1 , comprising at least two discrete integrated circuits, wherein at least said two discrete integrated circuits adjacent to each other are formed so that a first said discrete integrated circuit further comprises a conducting wiring pattern at least on the front substrate surface, and adjacent to the first one a second discrete integrated circuit positioned above the first circuit further comprises a conducting wiring pattern at least on the rear substrate surface.
29 . A three-dimensional integrated circuit according to claim 28 , further comprising a first protective dielectric layer covering the conducting wiring pattern on the first discrete integrated circuit and the functional elements of the first discrete integrated circuit, at least one front contact pad situated on said first protective dielectric layer, a second protective dielectric layer covering the conducting wiring pattern on the first discrete integrated circuit and the functional elements of the second discrete integrated circuit, at least one rear contact pad situated on said second protective dielectric layer, and at least one electrically conducting element which connects said rear contact pad with said front contact pad.
30 . A monolithic three-dimensional integrated circuit comprising:
(i) a heat sink, and (ii) a monolithic multilayer structure comprising stacked unit integrated circuits, wherein each of said unit integrated circuits comprises a heat-conducting substrate having a front surface and a rear surface facing the heat sink, a conducting wiring pattern formed on the front substrate surface, functional elements mounted on the front substrate surface and connected to the wiring pattern, wherein at least one of the functional elements is a heat-generating element, a protective dielectric layer formed above said wiring pattern and said functional elements, and a planarization layer formed above the protective layer, wherein the monolithic multilayer structure is mounted on said heat sink, and (iii) a system of integrated heat sinks, wherein each integrated heat sink is in thermal contact with said heat sink and penetrate into the monolithic multilayer structure providing thermal contact with at least one said substrate of the stacked unit integrated circuits.
31 . A monolithic three-dimensional integrated circuit according to claim 30 , wherein thickness and thermal conductivity of said substrate, and number, cross sectional area, length, arrangement, and thermal conductivity of said integrated heat sinks, are selected so as to ensure that temperature in any region of the three-dimensional monolithic integrated circuit will not exceed a preset tolerable operation temperature determined for preliminarily established intensities of said functional heat-generating elements and their known positions in the three-dimensional monolithic integrated circuit.
32 . A monolithic three-dimensional integrated circuit according to claims 30 or 31 , wherein at least one said substrate is made of an Al 2 O 3 based ceramic material.
33 . A monolithic three-dimensional integrated circuit according to claims 30 or 31 , wherein at least one functional element is made of a semiconducting thin crystal film formed by rodlike supramolecules composed of at least one organic compound with conjugated π-system, wherein a crystal structure of the film has an intermolecular spacing of 3.4±0.3 Å in the direction of at least one crystal axis.
34 . A monolithic three-dimensional integrated circuit according to claim 33 , wherein said organic compound is a polycyclic organic compound comprising at least one component of the general structural formula {R} {F} n , where R is a polycyclic core with conjugated π-system, F are modifying functional groups, and n is the number of functional groups.
35 . A monolithic three-dimensional integrated circuit according to claim 34 , wherein said polycyclic organic compound is a sulfoderivative of a perynone dye with the general structural formula from the group I-XVII:
where n is an integer in the range of 1 to 4 and p is an integer in the range of 0 to 6; Y is individually selected from the group consisting of H, Cl, F, Br, Alk, OH, OAlk, NO 2 and NH 2 ; M is a counterion; and j is the number of counterions in the molecule; for n>1, different counterions M can be involved.
36 . A monolithic three-dimensional integrated circuit according to claim 34 , wherein the polycyclic organic compound is a sulfoderivative of a heteroaromatic polycycloquinone with the general structural formula from the group XVIIIa-XVIIId:
where A 1 A 2 are fragments of the general structural formula,
X 1 , X 3 , X 4 , X 5 , X 6 , X 7 , X 8 are substituents from the group including H, OH, SO 3 H, such that at least one of these substituents is different from H; Y is a substituent from the series H, Cl, F, Br, Alk, OH, OAlk, NO2, NH2 and p is an integer in the range of 0, 1, 2, 3 and 4; n is one of the group including 0, 1, 2, such that at least one of fragments A 1 or A 2 comprises at least one sulfogroup; M is counterion; and j is the number of counterions in the molecule, which can be fractional if the counterion belongs to several molecules; for n>1, different counterions M can be involved.
37 . A monolithic three-dimensional integrated circuit according to claim 34 wherein the polycyclic organic compound is a sulfoderivative of a heteroaromatic polycycloquinone of the general structural formula from the group XIXa-XIXc:
where A 1 A 2 are fragments of the general structural formula
X 1 , X 3 , X 4 , X 5 , X 6 , X 7 , X 8 are substituents from the group including H, OH, SO 3 H, and Z is bridge closing new heterocyclic systems chosen from the series —O—, —SO 2 —, —SO 2 —O—; Y is a substituent from the series H, Cl, F, Br, Alk, OH, OAlk, NO2, NH2 and p is an integer in the range of 0, 1, 2, 3 and 4; n is one of the group including 0, 1, 2, such that at least one of fragments A 1 or A 2 comprises at least one sulfogroup; M is counterion; and j is the number of counterions in the molecule, which can be fractional if the counterion belongs to several molecules; for n>1, different counterions M can be involved.
38 . A monolithic three-dimensional integrated circuit according to claim 34 , wherein the polycyclic organic compound is a sulfoderivative of dyes containing anthraquinone fragment of the general structural formula from the group XX-XXIV:
where n is an integer in the range of 1 to 4 and p is an integer in the range of 0 to 8; Y is individually selected from the group consisting of H, Cl, F, Br, Alk, OH, OAlk, NO 2 and NH 2 ; M is a counterion; and j is the number of counterions in the molecule; for n>1, different counterions M can be involved.
39 . A monolithic three-dimensional integrated circuit according to claim 34 , wherein the polycyclic organic compound is sulfoderivative of fused polycyclic heteroaromatic compound comprising 5 or 6-membered rings with N or O or both: pyrrole, pyridine, oxazole, furan, oxazine, azine, chromone, pyridopyrimidine of the general structural formula from the group XXV-XXVIII:
where n is an integer in the range of 1 to 4 and p is an integer in the range of 0 to 8; Y is individually selected from the group consisting of H, Cl, F, Br, Alk, OH, OAlk, NO 2 and NH 2 ; M is a counterion; and j is the number of counterions in the molecule; for n>1, different counterions M can be involved.
40 . The monolithic three-dimensional integrated circuit according to claims 30 or 31 , wherein at least one said functional heat-generating element is a semiconductor thin film transistor.
41 . A monolithic three-dimensional integrated circuit according to claim 30 , wherein at least one said functional heat-generating element is a semiconductor diode.
42 . A monolithic three-dimensional integrated circuit according to claim 30 , wherein at least one said functional heat-generating element is a thin-film resistor.
43 . A monolithic three-dimensional integrated circuit according to claim 30 , wherein at least one the integrated heat sink is made of an Al 2 O 3 based ceramic material.
44 . A monolithic three-dimensional integrated circuit according to claim 30 , wherein at least one integrated heat sink has the shape of the cross section parallel to the front surface of said substrate selected from the list comprising circle, ellipse, square, rectangle, polygon, or any combination thereof.
45 . A monolithic three-dimensional integrated circuit according to claim 30 , wherein at least one unit integrated circuit further comprises at least one conducting element penetrating said substrate from rear surface to front surface and contacting with wiring pattern arranged on the front surface of said substrate.
46 . A monolithic three-dimensional integrated circuit according to claim 30 , further comprising at least one electrically conducting element, which is situated between two adjacent substrates and connects the wiring pattern arranged on the front surface of one substrate to the wiring pattern arranged on the front surface of another substrate.
47 . A monolithic three-dimensional integrated circuit according to claim 30 , wherein the planarization layer of at least one unit integrated circuit is made of a thermosetting material.Join the waitlist — get patent alerts
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