Method of manufacturing a semiconductor device

Abstract

A low thermal conductivity layer is formed on a back surface of a semiconductor wafer or chip, and a laser impression is formed on the low thermal conductivity layer. The laser impression can be formed without damaging the device surface of the semiconductor wafer or chip due to exothermic heat of the laser impression.

1 - 24 . (canceled)  
     
     
         25 . A method of manufacturing a semiconductor device comprising: 
 providing a semiconductor substrate having a first surface and a second surface which is opposite the first surface, wherein the first surface of the semiconductor substrate includes a pad electrode;    forming a first insulating layer which covers the first surface of the semiconductor substrate and exposes the pad electrode;    forming a second insulating layer which covers the first insulating layer and exposes the pad electrode;    grinding the second surface of the semiconductor substrate;    forming a low thermal conductivity layer on the ground second surface of the semiconductor substrate;    dividing the semiconductor substrate into plural semiconductor chip pieces; and    forming a laser impression on the low thermal conductivity layer of the    
     
     
         26 . A The method of manufacturing according to  claim 25 , further comprising forming a ball electrode on an exposed top of the pad electrode.  
     
     
         27 . The method of manufacturing according to  claim 25 , wherein said forming a low thermal conductivity layer comprises coating a liquid material on the ground second surface of the semiconductor substrate.  
     
     
         28 . The method of manufacturing according to  claim 25 , wherein said forming a low thermal conductivity layer comprises bonding a film material on the ground second surface of the semiconductor substrate using an adhesive.  
     
     
         29 . The method of manufacturing according to  claim 25 , wherein the low thermal conductivity layer has a thermal conductivity within a range of 10×10 −4  W/m·K˜10×10 −2  W/m·K.  
     
     
         30 . The method of manufacturing according to  claim 25 , wherein the laser impression is a product name.  
     
     
         31 . The method of manufacturing according to  claim 25 , wherein the laser impression is a product number.  
     
     
         32 . The method of manufacturing according to  claim 25 , wherein the laser impression is a company name.  
     
     
         33 . The method of manufacturing according to  claim 25 , wherein the laser impression is a serial number.  
     
     
         34 . A method of manufacturing a semiconductor device comprising: 
 providing a semiconductor substrate having a first surface and a second surface which is opposite the first surface, wherein the first surface of the semiconductor substrate includes a pad electrode;    forming a first insulating layer which covers the first surface of the semiconductor substrate and exposes the pad electrode;    forming a second insulating layer which covers the first insulating layer and exposes the pad electrode;    grinding the second surface of the semiconductor substrate;    forming a low thermal conductivity layer on the ground second surface of the semiconductor substrate;    forming a laser impression on the low thermal conductivity layer; and    dividing the semiconductor substrate having the laser impression into plural semiconductor chip pieces.    
     
     
         35 . The method of manufacturing according to  claim 34 , further comprising forming a ball electrode on an exposed top of the pad electrode.  
     
     
         36 . The method of manufacturing according to  claim 34 , wherein said forming a low thermal conductivity layer comprises coating a liquid material on the ground second surface of the semiconductor substrate.  
     
     
         37 . The method of manufacturing according to  claim 34 , wherein said forming a low thermal conductivity layer comprises bonding a film material on the ground second surface of the semiconductor substrate using an adhesive.  
     
     
         38 . The method of manufacturing according to  claim 34 , wherein the low thermal conductivity layer has a thermal conductivity within a range of 10×10 −4  W/m·K˜10×10 −2  W/m·K.  
     
     
         39 . The method of manufacturing according to  claim 34 , wherein the laser impression is a product name.  
     
     
         40 . The method of manufacturing according to  claim 34 , wherein the laser impression is a product number.  
     
     
         41 . The method of manufacturing according to  claim 34 , wherein the laser impression is a company name.  
     
     
         42 . The method of manufacturing according to  claim 34 , wherein the laser impression is a serial number.