Method for constructing a magneto-resistive element

Abstract

A magneto-resistive element is constructed. A ferromagnetic sense layer is deposited on a surface. The ferromagnetic sense layer is patterned. An etch is performed in preparation for depositing a dielectric layer. The dielectric layer is deposited over the sense layer. A ferromagnetic pinned layer is deposited over the dielectric layer.

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       14 . A method for constructing a magneto-resistive element, the method comprising the followings: 
 (a) depositing a ferromagnetic sense layer on a surface;    (b) forming a dielectric layer over the ferromagnetic sense layer;    (c) patterning the dielectric layer and ferromagnetic sense layer;    (d) forming isolation dielectric regions on sides of the patterned ferromagnetic sense layer;    (e) performing an etch of the dielectric layer; and, (f) depositing a ferromagnetic pinned layer over the patterned dielectric layer and the isolation dielectric regions.    
   
   
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       16 . A magnetic random access memory comprising: 
 an array of magneto-resistive elements, each magneto-resistive element including: 
 a patterned ferromagnetic sense layer deposited on a surface;  
 a dielectric layer deposited over the sense layer; and,  
 a ferromagnetic pinned layer deposited over the dielectric layer, wherein the ferromagnetic pinned layer is unpatterned.  
   
   
   
       17 . A magnetic random access memory as in  claim 16  wherein each magneto-resistive element additionally includes: 
 an antiferromagnetic pinning layer deposited over the ferromagnetic pinned layer.    
   
   
       18 . A magnetic random access memory as in  claim 16  wherein each magneto-resistive element additionally includes: 
 an antiferromagnetic pinning layer deposited over the ferromagnetic pinned layer; and,    a protective cap layer deposited over the antiferromagnetic pinning layer.    
   
   
       19 . A magnetic random access memory as in  claim 16  wherein the ferromagnetic pinned layer is a synthetic ferrimagnet.  
   
   
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