Ferroelectric thin film formation composition, ferroelectric thin film and method of fabricating ferroelectric thin film

Abstract

Provided are a ferroelectric thin film formation composition, a ferroelectric thin film and a method of fabricating a ferroelectric thin film, the ferroelectric thin film formation composition being capable of effectively preventing occurrence of a striation and expanding the range of choice of a sol composition. A ferroelectric thin film formation composition containing a metal compound that is a material to form a ferroelectric thin film contains a hydrophobic compound which includes a reactive group reacting with a hydroxy group and in which at least an end side of a remnant exclusive of the reactive group has a hydrophobic property. Thus, it is possible to expand the range of choice of the sol composition while effectively suppressing occurrence of the striation.

1 . A ferroelectric thin film formation composition comprising a metal compound that is a material to form a ferroelectric thin film, wherein said metal compound includes a hydrophobic compound which includes a reactive group reacting with a hydroxy group and wherein at least an end side of a remnant exclusive of the reactive group has a hydrophobic property.  
     
     
         2 . The ferroelectric thin film formation composition according to  claim 1 , wherein the reactive group is at least a type of a carboxy group, a silane halide group, a hydroxysilane group and an alkoxysilane group.  
     
     
         3 . The ferroelectric thin film formation composition according to  claim 1 , further comprising diethanolamine as a hydrolysis inhibitor which suppresses hydrolysis of the metal compound.  
     
     
         4 . The ferroelectric thin film formation composition according to  claim 1 , further comprising polyethylene glycol as a stabilizer which stabilizes the metal compound.  
     
     
         5 . The ferroelectric thin film formation composition according to  claim 1 , further comprising 2-butoxyethanol as a solvent to dissolve the metal compound.  
     
     
         6 . A method of fabricating a ferroelectric thin film, comprising the steps of: 
 applying a ferroelectric thin film formation composition onto a target, the composition comprising a metal compound that is a material to form a ferroelectric thin film, wherein the metal compound includes a hydrophobic compound which includes a reactive group reacting with a hydroxy group and wherein at least an end side of a remnant exclusive of the reactive group has a hydrophobic property; and    drying and calcining the ferroelectric thin film formation composition.    
     
     
         7 . The method of  claim 6 , wherein wherein the reactive group is at least a type of a carboxy group, a silane halide group, a hydroxysilane group and an alkoxysilane group.  
     
     
         8 . The method of  claim 6 , wherein the thin film formation composition further includes diethanolamine as a hydrolysis inhibitor which suppresses hydrolysis of the metal compound.  
     
     
         9 . The method of  claim 6 , wherein the ferroelectric thin film formation composition further includes polyethylene glycol as a stabilizer which stabilizes the metal compound.  
     
     
         10 . The method of  claim 6 , wherein the ferroelectric thin film formation composition further includes 2-butoxyethanol as a solvent to dissolve the metal compound.  
     
     
         11 . A ferroelectric thin film formed by use of the fabrication method according to  claim 6.